IRFU13N20DPBF

Mfr. #:: IRFU13N20DPBF
제조사:: Infineon Technologies
설명:: MOSFET MOSFT 200V 13A 235mOhm 25nC
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: IRFU13N20DPBF 데이터 시트
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ECAD Model:
추가 정보:: IRFU13N20DPBF 추가 정보

제품 속성
속성 값

제조사:: 인피니언

제품 카테고리:: MOSFET

RoHS:: Y

기술:: 시

장착 스타일:: 구멍을 통해

패키지/케이스:: TO-251-3

채널 수:: 1 Channel

트랜지스터 극성:: N-채널

Vds - 드레인 소스 항복 전압:: 200 V

Id - 연속 드레인 전류:: 13 A

Rds On - 드레인 소스 저항:: 235 mOhms

Vgs - 게이트 소스 전압:: 30 V

Qg - 게이트 차지:: 25 nC

최소 작동 온도:: - 55 C

최대 작동 온도:: + 175 C

Pd - 전력 손실:: 110 W

구성:: 하나의

채널 모드:: 상승

포장:: 튜브

키:: 6.22 mm

길이:: 6.73 mm

트랜지스터 유형:: 1 N-Channel

너비:: 2.38 mm

상표:: 인피니언 테크놀로지스

순방향 트랜스컨덕턴스 - 최소:: 6.2 S

가을 시간:: 10 ns

상품 유형:: MOSFET

상승 시간:: 27 ns

공장 팩 수량:: 3000

하위 카테고리:: MOSFET

일반적인 끄기 지연 시간:: 17 ns

일반적인 켜기 지연 시간:: 11 ns

부품 번호 별칭:: SP001573640

단위 무게:: 0.139332 oz

Tags: IRFU13N, IRFU13, IRFU1, IRFU, IRF

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IRFU13N20DPBF 설명

***ure Electronics: Single N-Channel 200 V 0.235 Ohm 38 nC HEXFET® Power Mosfet - IPAK

***ineon SCT: 200V Single N-Channel HEXFET Power MOSFET in a I-Pak package, IPAK-3, RoHS

*** Stop Electro: Power Field-Effect Transistor, 13A I(D), 200V, 0.235ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA

***ark: MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:200V; Continuous Drain Current, Id:13A; On Resistance, Rds(on):235mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:I-PAK ;RoHS Compliant: Yes

***ineon: Benefits: RoHS Compliant; Industry-leading quality; Fully Characterized Avalanche Voltage and Current; Low Gate-to-Drain Charge to Reduce Switching Losses; Fully Characterized Capacitance Including Effective Coss to Simplify Design

*** Source Electronics: Trans MOSFET N-CH 200V 17A 3-Pin(3+Tab) IPAK / MOSFET N-CH 200V 17A I-PAK

***ernational Rectifier: 200V Single N-Channel HEXFET Power MOSFET in a I-Pak package

***(Formerly Allied Electronics): MOSFET, 200V, 17A, 165 MOHM, 27 NC QG, I-PAK

***ark: MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:200V; Continuous Drain Current, Id:17A; On Resistance, Rds(on):165mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:IPAK ;RoHS Compliant: Yes

***ark: Transistor,mosfet,n-Channel,200V V(Br)Dss,9A I(D),to-251Aa Rohs Compliant: Yes

***emi: N-Channel QFET® MOSFET 200V, 9.0A, 280mΩ

***r Electronics: Power Field-Effect Transistor, 9A I(D), 200V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251

***rchild Semiconductor: This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts..

***(Formerly Allied Electronics): IRFU6215PBF P-channel MOSFET Transistor, 13 A, 150 V, 3-Pin IPAK

***ineon SCT: -150V Single N-Channel HEXFET Power MOSFET in a I-Pak package, IPAK-3, RoHS

***ure Electronics: Single P-Channel 150 V 580 mOhm 66 nC HEXFET® Power Mosfet - IPAK

***ineon: Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature; P-Channel MOSFET

***ark: MOSFET; Transistor Type:MOSFET; Transistor Polarity:P Channel; Drain Source Voltage, Vds:-150V; Continuous Drain Current, Id:-13A; On Resistance, Rds(on):295mohm; Rds(on) Test Voltage, Vgs:-10V; Package/Case:I-PAK ;RoHS Compliant: Yes

***i-Key: MOSFET N-CH 200V 7.6A IPAK

***ser: MOSFETs 200V N-Channel QFET

***el Nordic: Contact for details

***ark: Mosfet Transistor, N Channel, 10 A, 250 V, 0.32 Ohm, 10 V, 4.5 V

***emi: Single N-Channel Power MOSFET 250V, 10A, 420mΩ

***r Electronics: Small Signal Field-Effect Transistor, 10A I(D), 250V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251

***nell: N CHANNEL MOSFET, 250V, TO-251-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 10A; Drain Source Voltage Vds: 250V; On Resistance Rds(on): 0.32ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4.5V; Power Dissipation Pd: 52W; Transistor Case Style: TO-251; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (15-Jan-2018)

***emi: Power MOSFET, N-Channel, QFET®, 200 V, 7.8 A, 360 mΩ, IPAK

***et: Trans MOSFET N-CH 200V 7.8A 3-Pin(3+Tab) IPAK Rail

***r Electronics: Power Field-Effect Transistor, 7.8A I(D), 200V, 0.36ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

***ark: N-Ch/200V/10A/qfet Rohs Compliant: Yes

***rchild Semiconductor: This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.

IRFU13N20DPBF 추가 정보

200-250V HEXFET® Power MOSFETs: Infineon 200-250V HEXFET® Power MOSFETs offer a broad range of MOSFETs in various packages, current and RDS(on) ratings. These 200-250V HEXFET® Power MOSFETs utilize the latest processing techniques to achieve low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Infineon HEXFET® Power MOSFETs are known for provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.Learn More

Market price

부분 #	제조	설명	재고	가격
IRFU13N20DPBF DISTI # V99:2348_13892676	Infineon Technologies AG	Trans MOSFET N-CH 200V 13A 3-Pin(3+Tab) IPAK Tube RoHS: Compliant	2906	9000:$0.3943 3000:$0.4381 1000:$0.4867 500:$0.5950 100:$0.6389 10:$0.8195 1:$0.9259
IRFU13N20DPBF DISTI # IRFU13N20DPBF-ND	Infineon Technologies AG	MOSFET N-CH 200V 13A I-PAK RoHS: Compliant Min Qty: 1 Container: Tube	5875In Stock	1000:$0.5978 500:$0.7572 100:$0.9764 10:$1.2350 1:$1.3900
IRFU13N20DPBF DISTI # 31335313	Infineon Technologies AG	Trans MOSFET N-CH 200V 13A 3-Pin(3+Tab) IPAK Tube RoHS: Compliant	2906	1000:$0.4867 500:$0.5950 100:$0.6389 16:$0.8195
IRFU13N20DPBF DISTI # 24161208	Infineon Technologies AG	Trans MOSFET N-CH 200V 13A 3-Pin(3+Tab) IPAK Tube RoHS: Compliant	1980	1000:$0.5136 150:$0.6096 22:$0.6720
IRFU13N20DPBF DISTI # IRFU13N20DPBF	Infineon Technologies AG	Trans MOSFET N-CH 200V 13A 3-Pin(3+Tab) IPAK - Rail/Tube (Alt: IRFU13N20DPBF) RoHS: Compliant Min Qty: 3000 Container: Tube	Americas - 0	3000:$0.4169 6000:$0.4019 12000:$0.3869 18000:$0.3739 30000:$0.3679
IRFU13N20DPBF DISTI # IRFU13N20DPBF	Infineon Technologies AG	Trans MOSFET N-CH 200V 13A 3-Pin(3+Tab) IPAK (Alt: IRFU13N20DPBF) RoHS: Compliant Min Qty: 3000	Asia - 0	3000:$0.4600 6000:$0.4472 9000:$0.4351 15000:$0.4237 30000:$0.4182 75000:$0.4128 150000:$0.4076
IRFU13N20DPBF DISTI # 70018362	Infineon Technologies AG	IRFU13N20DPBF N-channel MOSFET Module,13 A,200 V,3-Pin IPAK RoHS: Compliant	0	675:$1.4400
IRFU13N20DPBF	Infineon Technologies AG	Single N-Channel 200 V 0.235 Ohm 38 nC HEXFET Power Mosfet - IPAK RoHS: Compliant	2570Tube	20:$0.5550 200:$0.5000 1000:$0.4250
IRFU13N20DPBF DISTI # 942-IRFU13N20DPBF	Infineon Technologies AG	MOSFET MOSFT 200V 13A 235mOhm 25nC RoHS: Compliant	2828	1:$1.1900 10:$1.0200 100:$0.7790 500:$0.6890 1000:$0.5440
IRFU13N20DPBF DISTI # 8655847P	Infineon Technologies AG	MOSFET N-CH 200V 13A HEXFET SMPS IPAK, TU	445	100:£0.5640 250:£0.5310 500:£0.4990 1350:£0.3930
IRFU13N20DPBF DISTI # C1S322000496783	Infineon Technologies AG	Trans MOSFET N-CH 200V 13A 3-Pin(3+Tab) IPAK Tube RoHS: Compliant	2906	1000:$0.4867 500:$0.5950 100:$0.6389 10:$0.8195

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	Mfr.#: ZXM61N03FTA OMO.#: OMO-ZXM61N03FTA-DIODES	Trans MOSFET N-CH 30V Automotive 3-Pin SOT-23 T/R
	Mfr.#: SMCJ10A OMO.#: OMO-SMCJ10A-LITTELFUSE	TVS Diodes - Transient Voltage Suppressors 10volts 5uA 88.2 Amps Uni-Di
	Mfr.#: BFC238350223 OMO.#: OMO-BFC238350223-VISHAY	Film Capacitors .022uF 5% 1600volts
	Mfr.#: LM79L12ACMX/NOPB OMO.#: OMO-LM79L12ACMX-NOPB-TEXAS-INSTRUMENTS	IC REG LINEAR -12V 100MA 8SOIC

유효성

재고:: Available
주문 시:: 1986
수량 입력:

IRFU13N20DPBF의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.

참고 가격(USD)

수량
단가
내선 가격

1: ~~US$1.18~~; ~~US$1.18~~

10: ~~US$1.01~~; ~~US$10.10~~

100: ~~US$0.78~~; ~~US$77.90~~

500: ~~US$0.69~~; ~~US$344.50~~

1000: ~~US$0.54~~; ~~US$544.00~~

시작

IRFU13N 3
IRFU13 4
IRFU1 41
IRFU 284
IRF 8615

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IRFU13N20DPBF

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes