SI4116DY-T1-GE3

Mfr. #:: SI4116DY-T1-GE3
제조사:: Vishay
설명:: MOSFET N-CH 25V 18A 8-SOIC
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: SI4116DY-T1-GE3 데이터 시트
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추가 정보:: SI4116DY-T1-GE3 추가 정보

제품 속성
속성 값

제조사: 비쉐이

제품 카테고리: FET - 단일

포장: 릴

부분 별칭: SI4466DY-T1-E3-S

단위 무게: 0.006596 oz

장착 스타일: SMD/SMT

패키지 케이스: SOIC-Narrow-8

기술: 시

채널 수: 1 Channel

구성: 하나의

트랜지스터형: 1 N-Channel

Pd 전력 손실: 2.5 W

최대 작동 온도: + 150 C

최소 작동 온도: - 55 C

가을철: 15 ns

상승 시간: 11 ns

Vgs 게이트 소스 전압: 12 V

Id-연속-드레인-전류: 12.7 A

Vds-드레인-소스-고장-전압: 25 V

Rds-On-Drain-Source-Resistance: 8.6 mOhms

트랜지스터 극성: N-채널

일반 꺼짐 지연 시간: 50 ns

일반 켜기 지연 시간: 13 ns

채널 모드: 상승

Tags: SI4116DY-T, SI4116, SI411, SI41, SI4

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Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SI4116DY-T1-GE3 설명

***ure Electronics: N-Channel 25 V 0.0086 Ohm 5 W Surface Mount Power Mosfet - SOIC-8

*** Source Electronics: Trans MOSFET N-CH 25V 18A 8-Pin SOIC N T/R / MOSFET N-CH 25V 18A 8-SOIC

***ark: Transistor; Transistor Type:MOSFET; Continuous Drain Current, Id:18000mA; Drain Source Voltage, Vds:25V; On Resistance, Rds(on):0.0115ohm; Rds(on) Test Voltage, Vgs:12V; Threshold Voltage, Vgs Typ:1.4V; Power Dissipation, Pd:2.5W ;RoHS Compliant: Yes

***ment14 APAC: MOSFET, N CH, 25V, 18A, 8SOIC; Transistor Polarity:N Channel; Drain Source Voltage Vds:25V; On Resistance Rds(on):7.1mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:5W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:18A; Power Dissipation Pd:5W; Voltage Vgs Max:12V

SI4116DY-T1-GE3 추가 정보

Si4 MOSFETs: Vishay/Siliconix Si4 MOSFETs are TrenchFET® power MOSFETs used for amplifying electronic signals. These Si4 MOSFETs are available in N-channel, P-channel, and N- & P-channel. The Si4 MOSFETs offer different VGS, VDS, and temperature ranges. The Si4 MOSFETs operate in an enhancement mode and used for switching between electronic signals. These MOSFETs are a surface mount, 100% Rg and UIS tested, and comes in a reel-package.Learn More

Market price

부분 #	제조	설명	재고	가격
SI4116DY-T1-GE3 DISTI # V72:2272_09216447	Vishay Intertechnologies	Trans MOSFET N-CH 25V 12.7A 8-Pin SOIC N T/R RoHS: Compliant	1222	1000:$0.5113 500:$0.6052 250:$0.6959 100:$0.6979 25:$0.8497 10:$0.8532 1:$0.9820
SI4116DY-T1-GE3 DISTI # SI4116DY-T1-GE3CT-ND	Vishay Siliconix	MOSFET N-CH 25V 18A 8-SOIC RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	8881In Stock	1000:$0.5420 500:$0.6865 100:$0.8852 10:$1.1200 1:$1.2600
SI4116DY-T1-GE3 DISTI # SI4116DY-T1-GE3DKR-ND	Vishay Siliconix	MOSFET N-CH 25V 18A 8-SOIC RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	8881In Stock	1000:$0.5420 500:$0.6865 100:$0.8852 10:$1.1200 1:$1.2600
SI4116DY-T1-GE3 DISTI # SI4116DY-T1-GE3TR-ND	Vishay Siliconix	MOSFET N-CH 25V 18A 8-SOIC RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR)	7500In Stock	2500:$0.4911
SI4116DY-T1-GE3 DISTI # 29064963	Vishay Intertechnologies	Trans MOSFET N-CH 25V 12.7A 8-Pin SOIC N T/R RoHS: Compliant	1222	1000:$0.5113 500:$0.6052 250:$0.6959 100:$0.6979 25:$0.8497 14:$0.8532
SI4116DY-T1-GE3 DISTI # SI4116DY-T1-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 25V 12.7A 8-Pin SOIC N T/R (Alt: SI4116DY-T1-GE3) RoHS: Compliant Min Qty: 2500 Container: Tape and Reel	Europe - 0	2500:€0.8429 5000:€0.6039 10000:€0.4899 15000:€0.4329 25000:€0.4149
SI4116DY-T1-GE3 DISTI # SI4116DY-T1-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 25V 12.7A 8-Pin SOIC N T/R - Tape and Reel (Alt: SI4116DY-T1-GE3) RoHS: Not Compliant Min Qty: 2500 Container: Reel	Americas - 0	2500:$0.5429 5000:$0.5269 10000:$0.5049 15000:$0.4909 25000:$0.4779
SI4116DY-T1-GE3 DISTI # 16P3725	Vishay Intertechnologies	Trans MOSFET N-CH 25V 12.7A 8-Pin SOIC N T/R - Product that comes on tape, but is not reeled (Alt: 16P3725) RoHS: Not Compliant Min Qty: 1 Container: Ammo Pack	Americas - 0	1:$0.8220
SI4116DY-T1-GE3 DISTI # 16P3725	Vishay Intertechnologies	N CHANNEL MOSFET, 25V, 18A, SOIC,Transistor Polarity:N Channel,Continuous Drain Current Id:18A,Drain Source Voltage Vds:25V,On Resistance Rds(on):11.5mohm,Rds(on) Test Voltage Vgs:12V,Threshold Voltage Vgs:1.4V,Product Range:-, RoHS Compliant: Yes	78	1:$1.5100 10:$1.2500 25:$1.1500 50:$1.0500 100:$0.9550 250:$0.8890 500:$0.8220
SI4116DY-T1-GE3 DISTI # R1082526	Vishay Dale	TRANSITOR,SI4804BDY RoHS: Compliant	0	5:$1.2800 25:$1.0600 100:$0.9700 250:$0.8900 500:$0.8300
SI4116DY-T1-GE3 DISTI # 781-SI4116DY-T1-GE3	Vishay Intertechnologies	MOSFET 25V Vds 12V Vgs SO-8 RoHS: Compliant	2103	1:$1.2600 10:$1.0400 100:$0.7960 500:$0.6850 1000:$0.6010 2500:$0.6000
SI4116DY-T1-GE3 DISTI # 7103317P	Vishay Intertechnologies	MOSFET N-CHANNEL 25V 12.7A SOIC8, RL	2600	50:£0.6260
SI4116DY-T1-GE3 DISTI # 7103317	Vishay Intertechnologies	MOSFET N-CHANNEL 25V 12.7A SOIC8, PK	725	5:£0.9720 50:£0.6260
SI4116DYT1GE3	Vishay Intertechnologies	RoHS: Compliant	Europe - 10000
SI4116DY-T1-GE3	Vishay Intertechnologies	MOSFET 25V Vds 12V Vgs SO-8 RoHS: Compliant	Americas -	2500:$0.4820 10000:$0.4410
SI4116DY-T1-GE3 DISTI # 1794777	Vishay Intertechnologies	MOSFET, N CH, 25V, 18A, 8SOIC RoHS: Compliant	0	5:£1.0800 25:£0.6960 100:£0.6720 250:£0.6470 500:£0.6230
SI4116DY-T1-GE3 DISTI # C1S803601003591	Vishay Intertechnologies	Trans MOSFET N-CH 25V 12.7A 8-Pin SOIC N T/R RoHS: Compliant	1222	250:$0.6961 100:$0.6981 25:$0.8498 10:$0.8533

영상	부분 #	설명
	Mfr.#: SI4116DY-T1-GE3 OMO.#: OMO-SI4116DY-T1-GE3	MOSFET 25V Vds 12V Vgs SO-8
	Mfr.#: SI4116DY-T1-E3 OMO.#: OMO-SI4116DY-T1-E3	MOSFET 25V Vds 12V Vgs SO-8
	Mfr.#: SI4116DY-T1-E3 OMO.#: OMO-SI4116DY-T1-E3-VISHAY	IGBT Transistors MOSFET 25V 18A 5.0W 8.6mohm @ 10V
	Mfr.#: SI4116DY OMO.#: OMO-SI4116DY-1190	신규 및 오리지널
	Mfr.#: SI4116DY-T1 OMO.#: OMO-SI4116DY-T1-1190	신규 및 오리지널
	Mfr.#: SI4116DY-T1-GE3 OMO.#: OMO-SI4116DY-T1-GE3-VISHAY	MOSFET N-CH 25V 18A 8-SOIC
	Mfr.#: SI4116DYT1GE3 OMO.#: OMO-SI4116DYT1GE3-1190	Small Signal Field-Effect Transistor, 12.7A I(D), 25V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

SI4116DY-T1-GE3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes