FDMS3602AS

FDMS3602AS
Mfr. #:
FDMS3602AS
제조사:
ON Semiconductor / Fairchild
설명:
MOSFET DUAL N-CH. ER TRENCH MO
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
FDMS3602AS 데이터 시트
배달:
DHL FedEx Ups TNT EMS
지불:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
제품 속성
속성 값
제조사:
온세미컨덕터
제품 카테고리:
MOSFET
RoHS:
Y
기술:
장착 스타일:
SMD/SMT
패키지/케이스:
Power-56-8
채널 수:
2 Channel
트랜지스터 극성:
N-채널
구성:
듀얼
상표명:
파워 스테이지 파워트렌치
포장:
키:
1.1 mm
길이:
6 mm
시리즈:
FDMS3602AS
트랜지스터 유형:
2 N-Channel
너비:
5 mm
상표:
온세미컨덕터 / 페어차일드
상품 유형:
MOSFET
공장 팩 수량:
3000
하위 카테고리:
MOSFET
단위 무게:
0.006032 oz
Tags
FDMS3602, FDMS360, FDMS36, FDMS3, FDMS, FDM
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Yang
Transistor MOSFET Array Dual N-Channel 25V 15A/26A 8-Pin PQFN T/R - Tape and Reel
***emi
Asymmetric Dual N-Channel PowerTrench® Power Stage MOSFET 25V
***ical
Trans MOSFET N-CH Si 25V 15A/26A 8-Pin Power 56 EP T/R
***rchild Semiconductor
This device includes two specialized N-Channel MOSFETs in a dual PQFN package. The switch node has been internally connected to enable easy placement and routing of synchronous buck converters. The control MOSFET (Q1) and synchronousSyncFET (Q2) have been designed to provide optimal power efficiency.
***Yang
Transistor MOSFET Array Dual N-CH 25V 65A/155A 8-Pin PQFN T/R - Tape and Reel
***el Electronic
RICHTEK RT9711AGBGPower Load Switch, High Side, Active High, 1 Output, 5.5V, 2.5A, SOT-23-5
***emi
PowerTrench® Power Stage Asymmetric Dual N-Channel MOSFET
***ure Electronics
Dual N-Channel 25 V 8.5/2.4 mOhm 27/82 nC 2.2/2.5 W Mosfet - POWER 56-8
***rchild Semiconductor
This device includes two specialized N-Channel MOSFETs in a dual PQFN package. The switch node has been internally connected to enable easy placement and routing of synchronous buck converters. The control MOSFET (Q1) and synchronous SyncFET (Q2) have been designed to provide optimal power efficiency.
***Yang
Transistor MOSFET Array Dual N-CH 25V 65A/155A 8-Pin Power 56 T/R - Tape and Reel
***emi
Asymmetric Dual N-Channel MOSFET PowerTrench® Power Stage, 25V
***ark
DUAL N CH MOSFET, POWERTRENCH, 25V, 40A, POWER56; Transistor Polarity:N Channel; Continuous Drain Current Id, N Channel:30A; Drain Source Voltage Vds, N Channel:25V; On Resistance Rds(on), N Channel:0.0013ohm
***rchild Semiconductor
This device includes two specialized N-Channel MOSFETs in a dual PQFN package. The switch node has been internally connected to enable easy placement and routing of synchronous buck converters. The control MOSFET (Q1) and synchronous SyncFET™ (Q2) have been designed to provide optimal power efficiency.
***nell
MOSFET, NN CH, ASYMMETRIC, 25V, POWER56; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:30A; Drain Source Voltage Vds:25V; On Resistance Rds(on):0.0043ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.8V; Power Dissipation Pd:2.2W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:Power 56; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)
***emi
N-Channel Power Trench® MOSFET 25V, 60A, 5.8mΩ
***ark
MOSFET, N CH, 25V, 28A, POWER56; Transistor Polarity:N Channel; Continuous Drain Current Id:28A; Drain Source Voltage Vds:25V; On Resistance Rds(on):0.0046ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.6V; No. of Pins:8 ;RoHS Compliant: Yes
***rchild Semiconductor
• This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on), fast switching speed and body diode reverse recovery performance.
***ure Electronics
Single N-Channel 25 V 5.2 mOhm 18 nC HEXFET® Power Mosfet - PQFN 3.3 x 3.3 mm
***ineon SCT
25V Single N-Channel HEXFET Power MOSFET in a 3.3mm X 3.3mm PQFN package, PQFN 3.3X3.3 8L, RoHS
***ark
TAPE AND REEL / MOSFET, 25V,A, 5mOhm, 12nC, PQFN3.3x3.3 single
***p One Stop
Trans MOSFET N-CH 25V 19A 8-Pin QFN EP T/R
***ineon
Benefits: RoHS Compliant; Low Thermal Resistance to PCB (less than 3.4C/W); Low Profile (less than 1.0 mm); Industry-Standard Pinout; Compatible with Existing Surface Mount Techniques; Qualified Industrial; Qualified MSL1 | Target Applications: Battery Protection; Isolated Primary Side MOSFETs; Isolated Secondary Side SyncRec MOSFETs; Load Switch High Side; Load Switch Low Side; MultiPhase ControlFET; Point of Load ControlFET
***(Formerly Allied Electronics)
SIR424DP-T1-GE3 N-channel MOSFET Transistor; 23 A; 20 V; 8-Pin PowerPAK SO
***ure Electronics
SiR172DP Series N-Channel 20 V 0.0074 Ohm 41.7 W SMT Mosfet - PowerPAK® SO-8
***ark
Transistor Polarity:n Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:30A; On Resistance Rds(On):0.0046Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.5V Rohs Compliant: Yes
***nell
MOSFET, N-CH, 20V, 30A, POWERPAK SO; Transistor Polarity: N Channel; Continuous Drain Current Id: 30A; Drain Source Voltage Vds: 20V; On Resistance Rds(on): 0.0046ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2.5V; Power Dissipation Pd: 41.7W; Transistor Case Style: PowerPAK SO; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: TrenchFET Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (20-Jun-2016)
***et Japan
Transistor MOSFET Array Dual N-Channel 25V 16A/31A 8-Pin TISON T/R
***ark
Mosfet, Dual N-Ch, 25V, 40A, Tison-8; Transistor Polarity:dual N Channel; Continuous Drain Current Id:40A; Drain Source Voltage Vds:25V; On Resistance Rds(On):0.0035Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Power Rohs Compliant: Yes
***ineon SCT
With the OptiMOS™ 25V product family, Infineon sets new standards in power density and energy efficiency for discrete power MOSFETs and system in package, PG-TISON-8, RoHS
***ineon
With the new OptiMOS 25V product family, Infineon sets new standards in power density and energy efficiency for discrete power MOSFETs and system in package. Ultra low gate and output charge, together with lowest on-state resistance in small footprint packages, make OptiMOS 25V the best choice for the demanding requirements of voltage regulator solutions in servers, datacom and telecom applications. | Benefits: Save overall system costs by reducing the number of phases in multiphase converters; Reduce power losses and increase efficiency for all load conditions; Save space with smallest packages like CanPAK, S3O8 or system in package solution; Minimize EMI in the system making external snubber networks obsolete and the products easy to design-in | Target Applications: Onboard charger; Mainboard; Notebook; DC-DC; VRD/VRM; LED; Motor control
부분 # 제조 설명 재고 가격
FDMS3602AS
DISTI # FDMS3602ASCT-ND
ON SemiconductorMOSFET 2N-CH 25V 15A/26A POWER56
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
Limited Supply - Call
    FDMS3602AS
    DISTI # FDMS3602ASDKR-ND
    ON SemiconductorMOSFET 2N-CH 25V 15A/26A POWER56
    RoHS: Compliant
    Min Qty: 1
    Container: Digi-Reel®
    Limited Supply - Call
      FDMS3602AS
      DISTI # FDMS3602ASTR-ND
      ON SemiconductorMOSFET 2N-CH 25V 15A/26A POWER56
      RoHS: Compliant
      Min Qty: 3000
      Container: Tape & Reel (TR)
      Temporarily Out of Stock
      • 3000:$0.7685
      FDMS3602AS
      DISTI # FDMS3602AS
      ON SemiconductorTrans MOSFET N-CH 25V 15A/26A 8-Pin PQFN T/R - Tape and Reel (Alt: FDMS3602AS)
      RoHS: Compliant
      Min Qty: 3000
      Container: Reel
      Americas - 0
      • 3000:$0.7839
      • 6000:$0.7789
      • 12000:$0.7689
      • 18000:$0.7589
      • 30000:$0.7399
      FDMS3602AS
      DISTI # 68X0375
      ON SemiconductorDUAL N-CH. ER TRENCH MO / REEL0
      • 1:$1.0400
      FDMS3602AS
      DISTI # 512-FDMS3602AS
      ON SemiconductorMOSFET DUAL N-CH. ER TRENCH MO
      RoHS: Compliant
      2430
      • 1:$1.5300
      • 10:$1.3000
      • 100:$1.0400
      • 500:$0.9060
      • 1000:$0.7510
      • 3000:$0.6990
      FDMS3602ASFairchild Semiconductor Corporation 
      RoHS: Not Compliant
      9000
      • 1000:$0.9900
      • 500:$1.0400
      • 100:$1.0800
      • 25:$1.1300
      • 1:$1.2200
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      IC SERIALIZER SMPTE 100BGA
      유효성
      재고:
      Available
      주문 시:
      1985
      수량 입력:
      FDMS3602AS의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
      참고 가격(USD)
      수량
      단가
      내선 가격
      1
      US$1.52
      US$1.52
      10
      US$1.29
      US$12.90
      100
      US$1.03
      US$103.00
      500
      US$0.91
      US$453.00
      1000
      US$0.75
      US$751.00
      2021년부터 반도체 공급 부족으로 인해 아래 가격은 2021년 이전 정상 가격입니다. 확인을 위해 문의를 보내주세요.
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