APT20M38BVRG

Mfr. #:: APT20M38BVRG
제조사:: Microchip / Microsemi
설명:: MOSFET FG, MOSFET, 200V, TO-247, RoHS
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: APT20M38BVRG 데이터 시트
배달:: DHL FedEx Ups TNT EMS
지불:: T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:: APT20M38BVRG Datasheet APT20M38BVRG Datasheet (P4)
ECAD Model:

제품 속성
속성 값

제조사:: 마이크로칩

제품 카테고리:: MOSFET

RoHS:: Y

기술:: 시

장착 스타일:: 구멍을 통해

패키지/케이스:: TO-247-3

채널 수:: 1 Channel

트랜지스터 극성:: N-채널

Vds - 드레인 소스 항복 전압:: 200 V

Id - 연속 드레인 전류:: 67 A

Rds On - 드레인 소스 저항:: 38 mOhms

Vgs th - 게이트 소스 임계 전압:: 2 V

Vgs - 게이트 소스 전압:: 30 V

Qg - 게이트 차지:: 225 nC

최소 작동 온도:: - 55 C

최대 작동 온도:: + 150 C

Pd - 전력 손실:: 370 W

구성:: 하나의

채널 모드:: 상승

포장:: 튜브

트랜지스터 유형:: 1 N-Channel

상표:: 마이크로칩 / 마이크로세미

가을 시간:: 10 ns

상품 유형:: MOSFET

상승 시간:: 21 ns

공장 팩 수량:: 1

하위 카테고리:: MOSFET

일반적인 끄기 지연 시간:: 48 ns

일반적인 켜기 지연 시간:: 14 ns

단위 무게:: 0.211644 oz

Tags: APT20M38B, APT20M38, APT20M3, APT20M, APT20, APT2, APT

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Step1:
Vacuum Packaging with PL

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APT20M38BVRG 설명

***ure Electronics: APT20M38 Series 200 V 0.038 Ohm 67 A N-Ch Enhancement Mode Power MOSFETs-TO-247

***ical: Trans MOSFET N-CH 200V 67A 3-Pin(3+Tab) TO-247 Tube

***rochip: MOSFET MOS5 200 V 38 mOhm TO-247

*** Stop Electro: Power Field-Effect Transistor, 67A I(D), 200V, 0.038ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247

***icroelectronics: N-channel 250 V, 0.033 Ohm typ., 52 A, Zener protected SuperMESH Power MOSFET in TO-247 package

***ure Electronics: N-Channel 250 V 45 mO 160 nC Flange Mount SuperMESH MOSFET - TO-247

***ark: MOSFET, N CHANNEL, 250V, 52A, TO-247; Channel Type:N Channel; Drain Source Voltage Vds:250V; Continuous Drain Current Id:26A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3.75V; MSL:- RoHS Compliant: Yes

***S.I.T. Europe - USA - Asia: Power Field-Effect Transistor, 52A I(D), 250V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247

***icroelectronics: N-channel 200 V, 0.028 Ohm typ., 75 A STripFET(TM) Power MOSFET in TO-247 package

***ure Electronics: N-Channel 200 V 34 mOhm Flange Mount STripFET Power Mosfet - TO-247

***ark: MOSFET, N CHANNEL, 200V, 75A, TO-247; Channel Type:N Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:37A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V; MSL:- RoHS Compliant: Yes

***r Electronics: Power Field-Effect Transistor, 75A I(D), 200V, 0.034ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AB

***emi: N-Channel Power MOSFET, SUPREMOS®, FAST, 600V, 76A, 36mΩ, TO-247

***ure Electronics: Single N-Channel 600 V 36 mOhm 285 nC 543 W Silicon Flange Mount Mosfet TO-247-3

***r Electronics: Power Field-Effect Transistor, 76A I(D), 600V, 0.036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247

***nell: MOSFET,N CH,600V,76A,TO247; Transistor Polarity:N Channel; Continuous Drain Current Id:76A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.028ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:543W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-247; No. of Pins:3; SVHC:No SVHC (19-Dec-2011)

***rchild Semiconductor: The SupreMOS® MOSFET is Fairchild Semiconductor’s next generation of high voltage super-junction (SJ) technology employing a deep trench filling process that differentiates it from the conventional SJ MOSFETs. This advanced technology and precise process control provides lowest Rsp on-resistance, superior switching performance and ruggedness. SupreMOS MOSFET is suitable for high frequency switching power converter applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.

***icroelectronics: N-channel 650 V, 0.024 Ohm typ., 84 A MDmesh M5 Power MOSFET in TO-247 package

*** Source Electronics: Trans MOSFET N-CH Si 650V 84A 3-Pin(3+Tab) TO-247 Tube / MOSFET N-CH 650V 84A TO-247

***nell: MOSFET, N CH, 650V, 84A, 0R024, TO-247-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 84A; Drain Source Voltage Vds: 650V; On Resistance Rds(on): 0.024ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs

***r Electronics: Power Field-Effect Transistor, 84A I(D), 650V, 0.029ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247

***emi: N-Channel Power MOSFET, SUPREMOS®, FRFET®, 600 V, 72.8 A, 38 mΩ, TO-247

***r Electronics: Power Field-Effect Transistor, 72.8A I(D), 600V, 0.038ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AB

***nell: MOSFET, N CH, 600V, 72.8A, TO247; Transistor Polarity:N Channel; Continuous Drain Current Id:72.8A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.0287ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:543W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-247; No. of Pins:3

***rchild Semiconductor: The SupreMOS® MOSFET is Fairchild Semiconductor’s next generation of high voltage super-junction (SJ) technology employing a deep trench filling process that differentiates it from the conventional SJ MOSFETs. This advanced technology and precise process control provides lowest Rsp on-resistance, superior switching performance and ruggedness. SupreMOS MOSFET is suitable for high frequency switching power converter applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications. SupreMOS FRFET® MOSFET’s optimized body diode reverse recovery performance can remove additional component and improve system reliability.

***ure Electronics: IPW60R041P6 Series 600 V 77.5 A CoolMOS P6 Power Transistor - TO-247-3

***ark: MOSFET, N-CH, 600V, 77.5A, 150DEG C/481W; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:77.5A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes

***ineon SCT: Infineons CoolMOS™ P6 superjunction MOSFET family is designed to enable higher system efficiency whilst being easy to design in, PG-TO247-3, RoHS

***nell: MOSFET, N-CH, 600V, 77.5A, TO-247; Transistor Polarity: N Channel; Continuous Drain Current Id: 77.5A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.037ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 481W; Transistor Case Style: TO-247; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: CoolMOS P6 Series; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (27-Jun-2018)

***ineon: Infineons CoolMOS P6 product family is designed to enable higher system efficiency whilst being easy to design in. CoolMOS P6 closes the gap between technologies which focus on delivering ultimate performance and those which concentrate more on ease-of-use. | Summary of Features: Reduced gate charge (Q g); Higher V th; Good body diode ruggedness; Optimized integrated R g; Improved dv/dt from 50V/ns; CoolMOS quality with over 12 years manufacturing experience in superjunction technology | Benefits: Improved effciency especially in light load condition; Better efficiency in soft switching applications due to earlier turn-off; Suitable for hard- & soft-switching topologies; Optimized balance of efficiency and ease of use and good controllability of switching behavior; High robustness and better efficiency; Outstanding quality & reliability | Target Applications: PFC stages for server, telecom rectifier, PC silverbox, gaming consoles; PWM stages (TTF, LLC) for server, telecom rectifier, PC silverbox, gaming consoles

Market price

부분 #	제조	설명	재고	가격
APT20M38BVRG DISTI # V36:1790_09096220	Microsemi Corporation	Trans MOSFET N-CH 200V 67A 3-Pin(3+Tab) TO-247 RoHS: Compliant	463	1000:$7.7890 500:$8.6910 250:$9.3770 100:$10.3650 50:$10.8520 30:$11.5820
APT20M38BVRG DISTI # APT20M38BVRG-ND	Microsemi Corporation	MOSFET N-CH 200V 67A TO-247 RoHS: Compliant Min Qty: 40 Container: Tube	Temporarily Out of Stock	40:$11.8692
APT20M38BVRG DISTI # 32884824	Microsemi Corporation	Trans MOSFET N-CH 200V 67A 3-Pin(3+Tab) TO-247 RoHS: Compliant	463	30:$11.5820
APT20M38BVRG DISTI # APT20M38BVRG	Microchip Technology Inc	Trans MOSFET N-CH 200V 67A 3-Pin(3+Tab) TO-247 - Rail/Tube (Alt: APT20M38BVRG) RoHS: Compliant Min Qty: 40 Container: Tube	Americas - 0	400:$7.8900 200:$8.0900 120:$8.2900 80:$8.5900 40:$8.8900
APT20M38BVRG DISTI # 494-APT20M38BVRG	Microchip Technology Inc	MOSFET Power MOSFET - MOS5 RoHS: Compliant	0	1:$13.8400 10:$12.5800 25:$11.6300 50:$11.0000 100:$10.6100 250:$9.6900 500:$9.0700
APT20M38BVRG DISTI # APT20M38BVRG	Microsemi Corporation	POWER MOSFET TRANSISTOR RoHS: Compliant	0	40:$8.4200 50:$8.2000 100:$8.1000

영상	부분 #	설명
	Mfr.#: SI2304BDS-T1-GE3 OMO.#: OMO-SI2304BDS-T1-GE3	MOSFET 30V 3.2A 1.08W 70mohm @ 10V
	Mfr.#: IRFP31N50LPBF OMO.#: OMO-IRFP31N50LPBF	MOSFET N-CH 500V HEXFET MOSFET
	Mfr.#: SI2304BDS-T1-GE3 OMO.#: OMO-SI2304BDS-T1-GE3-VISHAY	MOSFET N-CH 30V 2.6A SOT23-3
	Mfr.#: IRFP31N50LPBF OMO.#: OMO-IRFP31N50LPBF-VISHAY	MOSFET N-CH 500V 31A TO-247AC
	Mfr.#: 0451010.MRL OMO.#: OMO-0451010-MRL-LITTELFUSE	Surface Mount Fuses 125V 10A

APT20M38BVRG

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes