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IPA60R060P7XKSA1

IPA60R060P7XKSA1
Mfr. #:
IPA60R060P7XKSA1
제조사:
Infineon Technologies
설명:
MOSFET HIGH POWER_NEW
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
IPA60R060P7XKSA1 데이터 시트
배달:
DHL FedEx Ups TNT EMS
지불:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
추가 정보:
IPA60R060P7XKSA1 추가 정보
제품 속성
속성 값
제조사:
인피니언
제품 카테고리:
MOSFET
RoHS:
Y
기술:
시
장착 스타일:
구멍을 통해
패키지/케이스:
TO-220FP-3
채널 수:
1 Channel
트랜지스터 극성:
N-채널
Vds - 드레인 소스 항복 전압:
600 V
Id - 연속 드레인 전류:
48 A
Rds On - 드레인 소스 저항:
49 mOhms
Vgs th - 게이트 소스 임계 전압:
3 V
Vgs - 게이트 소스 전압:
20 V
Qg - 게이트 차지:
67 nC
최소 작동 온도:
- 55 C
최대 작동 온도:
+ 150 C
Pd - 전력 손실:
29 W
구성:
하나의
채널 모드:
상승
상표명:
쿨모스
포장:
튜브
시리즈:
CoolMOS P7
트랜지스터 유형:
1 N-Channel
상표:
인피니언 테크놀로지스
가을 시간:
4 ns
상품 유형:
MOSFET
상승 시간:
12 ns
공장 팩 수량:
500
하위 카테고리:
MOSFET
일반적인 끄기 지연 시간:
79 ns
일반적인 켜기 지연 시간:
23 ns
부품 번호 별칭:
IPA60R060P7 SP001658404
단위 무게:
0.068784 oz
Tags
IPA60R06, IPA60R0, IPA60R, IPA60, IPA6, IPA
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 600 V 60 mOhm 67 nC CoolMOS™ Power Mosfet - TO-220-3FP
***i-Key
MOSFET N-CHANNEL 600V 48A TO220
***et Europe
HIGH POWER_NEW
***ark
Mosfet, N-Ch, 600V, 48A, 29W, To-220Fp; Transistor Polarity:n Channel; Continuous Drain Current Id:48A; Drain Source Voltage Vds:600V; On Resistance Rds(On):0.049Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.5V; Power Rohs Compliant: Yes
***ment14 APAC
Prices include import duty and tax. MOSFET, N-CH, 600V, 48A, 29W, TO-220FP; Transistor Polarity:N Channel; Continuous Drain Current Id:48A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.049ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.5V; Power Dissipation Pd:29W; Transistor Case Style:TO-220FP; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:CoolMOS P7 Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)
***nell
MOSFET CAN N, 600V, 48A, 29W, TO-220FP; Polarità Transistor:Canale N; Corrente Continua di Drain Id:48A; Tensione Drain Source Vds:600V; Resistenza di Attivazione Rds(on):0.049ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:3.5V; Dissipazione di Potenza Pd:29W; Modello Case Transistor:TO-220FP; No. di Pin:3Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:CoolMOS P7 Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)
***ineon
The 600V CoolMOS P7 is the successor to the 600V CoolMOS P6 series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class R onxA and the inherently low gate charge (Q G) of the CoolMOS 7th generation platform ensure its high efficiency. | Summary of Features: 600V P7 enables excellent FOM R DS(on)xE oss andR DS(on)xQ G | Benefits: Excellent FOMs R DS(on)xQ G/R DS(on)xE oss enable higher efficiency | Target Applications: TV power supply; Industrial SMPS; Server; Telecom; Lighting
600V CoolMOS P7 MOSFETs
Infineon 600V CoolMOS P7 MOSFETs are 7th generation devices and utilize revolutionary technology for high voltage power MOSFETs. The transistors are designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The 600V CoolMOS P7 combines the benefits of a fast switching SJ MOSFET with excellent ease of use. The 600V P7 feature very low ringing tendency, outstanding robustness of body diode against hard commutation and excellent ESD capability. Extremely low switching and conduction losses make switching applications even more efficient, compact and cooler.
CoolMOS™ 7 Superjunction MOSFETs
Infineon Technologies CoolMOS™ 7 Superjunction MOSFETs set new standards for energy efficiency, power density and ease of use. CoolMOS 7 technology is optimized for specific applications with innovative package concepts and various technologies. CoolMOS 7 MOSFETS are ideal for applications like making electric vehicle charging stations smaller with higher outputs resulting in faster car charging. Thanks to CoolMOS 7, new generations of adapters and chargers are smaller, lighter and more efficient. With CoolMOS 7, engineers can make renewable energy systems cheaper and more efficient.
CoolMOS™ Power Transistors
Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.
CoolMOS™ P7 MOSFETs
Infineon Technologies CoolMOS™ P7 MOSFETs deliver best-in-class price/performance ratio with excellent ease-of-use to address challenges in various applications. The 700V and 800V CoolMOS P7 power MOSFETs have been developed for flyback-based low-power SMPS applications including adapter and charger, lighting, audio SMPS, AUX and industrial power. The 600V CoolMOS P7 power MOSFETs target not only low power but also high-power SMPS applications like solar inverters, server, telecomand EV charging stations. The P7 MOSFETs are fully optimized for hard- and soft-switching topologies. 
부분 # 제조 설명 재고 가격
IPA60R060P7XKSA1
DISTI # C1S322000671038		Infineon Technologies AGMOSFETs
RoHS: Compliant		50
  • 50:$5.1900
  • 10:$6.8700
  • 1:$8.4700
IPA60R060P7XKSA1
DISTI # IPA60R060P7XKSA1-ND		Infineon Technologies AGMOSFET N-CHANNEL 600V 48A TO220
RoHS: Compliant
Min Qty: 1
Container: Tube		33In Stock
  • 1000:$3.7137
  • 500:$4.4034
  • 100:$5.4379
  • 10:$6.6320
  • 1:$7.4300
IPA60R060P7XKSA1
DISTI # IPA60R060P7XKSA1		Infineon Technologies AGHIGH POWER_NEW - Rail/Tube (Alt: IPA60R060P7XKSA1)
RoHS: Compliant
Min Qty: 500
Container: Tube		Americas - 0
  • 500:$3.3900
  • 1000:$3.2900
  • 2000:$3.1900
  • 3000:$3.0900
  • 5000:$2.9900
IPA60R060P7XKSA1
DISTI # 726-IPA60R060P7XKSA1		Infineon Technologies AGMOSFET HIGH POWER_NEW
RoHS: Compliant		0
  • 1:$6.3900
  • 10:$5.4300
  • 100:$4.7100
  • 250:$4.4700
  • 500:$4.0100
IPA60R060P7XKSA1Infineon Technologies AGSingle N-Channel 600 V 60 mOhm 67 nC CoolMOS Power Mosfet - TO-220-3FP
RoHS: Not Compliant		525Tube
  • 500:$3.4500
IPA60R060P7XKSA1
DISTI # 2986441		Infineon Technologies AGMOSFET, N-CH, 600V, 48A, 150DEG C, 29W
RoHS: Compliant		0
  • 1:$8.7800
  • 10:$8.0000
  • 100:$7.2100
  • 250:$6.5500
  • 500:$5.5400
  • 1000:$5.5400
영상 부분 # 설명
IPP110N20NA

Mfr.#: IPP110N20NA

OMO.#: OMO-IPP110N20NA

 MOSFET N-Ch 200V 88A TO220-3
LGG2W391MELB40

Mfr.#: LGG2W391MELB40

OMO.#: OMO-LGG2W391MELB40

 Aluminum Electrolytic Capacitors - Snap In 450volts 390uF 105c
LGG2W391MELB40

Mfr.#: LGG2W391MELB40

OMO.#: OMO-LGG2W391MELB40-NICHICON

 Aluminum Electrolytic Capacitors - Snap In 450volts 390uF 105c
IPP110N20NA

Mfr.#: IPP110N20NA

OMO.#: OMO-IPP110N20NA-1190

 MOSFET N-Ch 200V 88A TO220-3
V30202C-M3/4W

Mfr.#: V30202C-M3/4W

OMO.#: OMO-V30202C-M3-4W-VISHAY

 Schottky Diodes & Rectifiers 30A 200V Trench Stky Rectifie
유효성
재고:
Available
주문 시:
1500
수량 입력:
IPA60R060P7XKSA1의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
참고 가격(USD)
수량
단가
내선 가격
1
US$6.38
US$6.38
10
US$5.42
US$54.20
100
US$4.70
US$470.00
250
US$4.46
US$1 115.00
500
US$4.00
US$2 000.00
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