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| 부분 # | 제조 | 설명 | 재고 | 가격 |
|---|---|---|---|---|
| BSC016N03LSGATMA1 DISTI # V72:2272_06383408 | Infineon Technologies AG | Trans MOSFET N-CH 30V 100A 8-Pin TDSON EP T/R RoHS: Compliant | 990 |
|
| BSC016N03LSGATMA1 DISTI # V36:1790_06383408 | Infineon Technologies AG | Trans MOSFET N-CH 30V 100A 8-Pin TDSON EP T/R RoHS: Compliant | 0 | |
| BSC016N03LSGATMA1 DISTI # BSC016N03LSGATMA1TR-ND | Infineon Technologies AG | MOSFET N-CH 30V 100A TDSON8 RoHS: Compliant Min Qty: 5000 Container: Tape & Reel (TR) | Limited Supply - Call |
|
| BSC016N03LSGATMA1 DISTI # BSC016N03LSGATMA1CT-ND | Infineon Technologies AG | MOSFET N-CH 30V 100A TDSON8 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT) | Limited Supply - Call | |
| BSC016N03LSGATMA1 DISTI # BSC016N03LSGATMA1DKR-ND | Infineon Technologies AG | MOSFET N-CH 30V 100A TDSON8 RoHS: Compliant Min Qty: 1 Container: Digi-Reel® | Limited Supply - Call | |
| BSC016N03LSGATMA1 DISTI # 31077150 | Infineon Technologies AG | Trans MOSFET N-CH 30V 100A 8-Pin TDSON EP T/R RoHS: Compliant | 5000 |
|
| BSC016N03LSGATMA1 DISTI # 26195180 | Infineon Technologies AG | Trans MOSFET N-CH 30V 100A 8-Pin TDSON EP T/R RoHS: Compliant | 990 |
|
| BSC016N03LSGATMA1 DISTI # SP000237663 | Infineon Technologies AG | Trans MOSFET N-CH 30V 100A 8-Pin TDSON T/R (Alt: SP000237663) RoHS: Compliant Min Qty: 5000 Container: Tape and Reel | Europe - 5000 |
|
| BSC016N03LS G DISTI # BSC016N03LS G | Infineon Technologies AG | Trans MOSFET N-CH 30V 100A 8-Pin TDSON T/R (Alt: BSC016N03LS G) RoHS: Compliant Min Qty: 5000 Container: Tape and Reel | Asia - 0 |
|
| BSC016N03LS G DISTI # BSC016N03LSG | Infineon Technologies AG | Trans MOSFET N-CH 30V 100A 8-Pin TDSON T/R - Bulk (Alt: BSC016N03LSG) RoHS: Not Compliant Min Qty: 544 Container: Bulk | Americas - 0 |
|
| BSC016N03LS G DISTI # SP000237663 | Infineon Technologies AG | Trans MOSFET N-CH 30V 100A 8-Pin TDSON T/R (Alt: SP000237663) RoHS: Compliant Min Qty: 5000 Container: Tape and Reel | Europe - 0 |
|
| BSC016N03LSGATMA1 DISTI # BSC016N03LSGATMA1 | Infineon Technologies AG | Trans MOSFET N-CH 30V 100A 8-Pin TDSON T/R - Bulk (Alt: BSC016N03LSGATMA1) RoHS: Compliant Min Qty: 658 Container: Bulk | Americas - 0 |
|
| BSC016N03LSGATMA1 DISTI # BSC016N03LSGATMA1 | Infineon Technologies AG | Trans MOSFET N-CH 30V 100A 8-Pin TDSON T/R - Tape and Reel (Alt: BSC016N03LSGATMA1) RoHS: Compliant Min Qty: 5000 Container: Reel | Americas - 0 |
|
| BSC016N03LSGATMA1. DISTI # 31AC8215 | Infineon Technologies AG | TRANSITIONAL MOSFETS ROHS COMPLIANT: YES | 0 |
|
| BSC016N03LS G DISTI # 726-BSC016N03LSG | Infineon Technologies AG | MOSFET N-Ch 30V 100A TDSON-8 OptiMOS 3 RoHS: Compliant | 1439 |
|
| BSC016N03LSGATMA1 DISTI # 726-BSC016N03LSGATMA | Infineon Technologies AG | MOSFET N-Ch 30V 100A TDSON-8 OptiMOS 3 RoHS: Compliant | 4707 |
|
| BSC016N03LSGXT DISTI # 726-BSC016N03LSGXT | Infineon Technologies AG | MOSFET N-Ch 30V 100A TDSON-8 OptiMOS 3 | 0 | |
| BSC016N03LSG | Infineon Technologies AG | Power Field-Effect Transistor, 32A I(D), 30V, 0.0023ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET RoHS: Compliant | 1232 |
|
| BSC016N03LSGATMA1 | Infineon Technologies AG | Power Field-Effect Transistor, 32A I(D), 30V, 0.0023ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET RoHS: Compliant | 8845 |
|
| BSC016N03LSG | Infineon Technologies AG | *** FREE SHIPPING ORDERS OVER $100 *** 32 A, 30 V, 0.0023 ohm, N-CHANNEL, Si, POWER, MOSFET | 5900 |
|
| BSC016N03LS G | Infineon Technologies AG | 147 | ||
| BSC016N03LSG | Infineon Technologies AG | 106 | ||
| BSC016N03LSG | 1235 | |||
| BSC016N03LSGXT/BKN | Infineon Technologies AG | INSTOCK | 100 | |
| BSC016N03LSGATMA1 DISTI # BSC016N03LSGATMA1 | Infineon Technologies AG | Transistor: N-MOSFET,unipolar,30V,100A,125W,PG-TDSON-8 | 4180 |
|
| BSC016N03LSGATMA1 DISTI # XSKDRABS0003243 | Infineon Technologies AG | RoHS: Compliant | 15000 in Stock0 on Order |
|
| BSC016N03LSG | Infineon Technologies AG | 30V,100A,N Channel Power MOSFET | 100 |
|
| 영상 | 부분 # | 설명 |
|---|---|---|
|
|
Mfr.#: BSC016N06NSATMA1 OMO.#: OMO-BSC016N06NSATMA1 |
MOSFET N-Ch 60V 100A DSON-8 OptiMOS |
|
|
Mfr.#: BSC016N04LSGATMA1 OMO.#: OMO-BSC016N04LSGATMA1 |
MOSFET N-Ch 40V 100A TDSON-8 OptiMOS 3 |
|
|
Mfr.#: BSC016N03LS G OMO.#: OMO-BSC016N03LS-G |
MOSFET N-Ch 30V 100A TDSON-8 OptiMOS 3 |
|
Mfr.#: BSC016N03LSG OMO.#: OMO-BSC016N03LSG-1190 |
Power Field-Effect Transistor, 32A I(D), 30V, 0.0023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET |
|
Mfr.#: BSC016N03LSGXT OMO.#: OMO-BSC016N03LSGXT-1190 |
MOSFET N-Ch 30V 100A TDSON-8 OptiMOS 3 |
|
|
Mfr.#: BSC016N03MSGATMA1 |
MOSFET N-CH 30V 100A TDSON-8 |
|
Mfr.#: BSC016N04LS G OMO.#: OMO-BSC016N04LS-G-1190 |
Trans MOSFET N-CH 40V 31A 8-Pin TDSON EP |
|
Mfr.#: BSC016N06NS , TDA3629T , |
신규 및 오리지널 |
|
|
Mfr.#: BSC016N06NSTATMA1 |
DIFFERENTIATED MOSFETS |
|
Mfr.#: BSC016N03LS G OMO.#: OMO-BSC016N03LS-G-128 |
MOSFET N-Ch 30V 100A TDSON-8 OptiMOS 3 |