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STGF4M65DF2

STGF4M65DF2
Mfr. #:
STGF4M65DF2
제조사:
STMicroelectronics
설명:
IGBT Transistors PTD HIGH VOLTAGE
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
STGF4M65DF2 데이터 시트
배달:
DHL FedEx Ups TNT EMS
지불:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
추가 정보:
STGF4M65DF2 추가 정보 STGF4M65DF2 Product Details
제품 속성
속성 값
제조사:
ST마이크로일렉트로닉스
제품 카테고리:
IGBT 트랜지스터
RoHS:
Y
기술:
시
패키지/케이스:
TO-220FP-3
장착 스타일:
구멍을 통해
구성:
하나의
컬렉터-이미터 전압 VCEO 최대:
650 V
수집기-이미터 포화 전압:
1.6 V
최대 게이트 이미터 전압:
20 V
25C에서 연속 수집기 전류:
8 A
Pd - 전력 손실:
23 W
최소 작동 온도:
- 55 C
최대 작동 온도:
+ 175 C
시리즈:
STGF4M65DF2
연속 수집가 현재 IC 최대:
8 A
상표:
ST마이크로일렉트로닉스
게이트-이미터 누설 전류:
+/- 250 uA
상품 유형:
IGBT 트랜지스터
공장 팩 수량:
1000
하위 카테고리:
IGBT
단위 무게:
0.068784 oz
Tags
STGF, STG
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
    A***e
    A***e
    NL

    Not tested yet, will come after testing.

    2019-04-19
    F***t
    F***t
    NO

    Nice device, very fast delivery. Recommended

    2019-06-07
***r Electronics
Insulated Gate Bipolar Transistor, 8A I(C), 650V V(BR)CES, N-Channel, TO-220AB
***icroelectronics
Trench gate field-stop IGBT, M series 650 V, 4 A low loss
***ure Electronics
M Series 650 V 8 A Through Hole Silicon IGBT - TO-220FP
***et
Trans IGBT Chip N 650V 8A 3-Pin TO-220FP Tube
*** Electronic Components
IGBT Transistors PTD HIGH VOLTAGE
STM 650V M Series Trench Gate Field-Stop IGBTs
STMicroelectronics 650V M Series Trench Gate Field-Stop IGBTs are developed using an advanced proprietary trench gate field-stop structure. The 650V M series supply a 3A-150A maximum collector current for applications with up to 100kHz operating frequency. They have an optimized design and are available in a tailored built-in anti-parallel diode.
부분 # 제조 설명 재고 가격
STGF4M65DF2
DISTI # 497-16965-ND		STMicroelectronicsTRENCH GATE FIELD-STOP IGBT, M S
RoHS: Compliant
Min Qty: 1
Container: Tube		1816In Stock
  • 6000:$0.3710
  • 2000:$0.3896
  • 100:$0.6400
  • 25:$0.7792
  • 10:$0.8210
  • 1:$0.9200
STGF4M65DF2
DISTI # STGF4M65DF2		STMicroelectronicsTrans IGBT Chip N 650V 8A 3-Pin TO-220FP Tube (Alt: STGF4M65DF2)
RoHS: Compliant
Min Qty: 50
Container: Tube		Europe - 100
  • 500:€0.4539
  • 300:€0.4889
  • 200:€0.5289
  • 100:€0.5779
  • 50:€0.7059
STGF4M65DF2
DISTI # STGF4M65DF2		STMicroelectronicsTrans IGBT Chip N 650V 8A 3-Pin TO-220FP Tube - Bulk (Alt: STGF4M65DF2)
RoHS: Compliant
Min Qty: 1900
Container: Bulk		Americas - 0
  • 19000:$0.3379
  • 9500:$0.3449
  • 5700:$0.3609
  • 3800:$0.3779
  • 1900:$0.3969
STGF4M65DF2
DISTI # 20AC4203		STMicroelectronicsPTD HIGH VOLTAGE0
  • 1:$0.3320
STGF4M65DF2
DISTI # 511-STGF4M65DF2		STMicroelectronicsIGBT Transistors PTD HIGH VOLTAGE
RoHS: Compliant		830
  • 1:$0.8700
  • 10:$0.7420
  • 100:$0.5700
  • 500:$0.5040
  • 1000:$0.3980
  • 2000:$0.3530
  • 10000:$0.3400
STGF4M65DF2
DISTI # IGBT2168		STMicroelectronicsIGBT 650V 4A1,6VTO-220
RoHS: Compliant		Stock DE - 0Stock HK - 0Stock US - 0
  • 2000:$0.5354
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유효성
재고:
830
주문 시:
2813
수량 입력:
STGF4M65DF2의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
참고 가격(USD)
수량
단가
내선 가격
1
US$0.87
US$0.87
10
US$0.74
US$7.42
100
US$0.57
US$57.00
500
US$0.50
US$252.00
1000
US$0.40
US$398.00
2000
US$0.35
US$706.00
10000
US$0.34
US$3 400.00
25000
US$0.33
US$8 225.00
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