RN1108MFV(TPL3)

Mfr. #:: RN1108MFV(TPL3)
제조사:: Toshiba
설명:: Bipolar Transistors - Pre-Biased 100mA 50volts 3Pin 22K x 47Kohms
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: RN1108MFV(TPL3) 데이터 시트
배달:: DHL FedEx Ups TNT EMS
지불:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

제품 속성
속성 값

제조사:: 도시바

제품 카테고리:: 양극성 트랜지스터 - 사전 바이어스

RoHS:: N

구성:: 하나의

트랜지스터 극성:: NPN

일반적인 입력 저항:: 22 kOhms

일반적인 저항 비율:: 0.468

장착 스타일:: SMD/SMT

DC 수집기/기본 이득 hfe 최소:: 80

컬렉터-이미터 전압 VCEO 최대:: 50 V

지속적인 수집가 전류:: 100 mA

피크 DC 수집기 전류:: 100 mA

Pd - 전력 손실:: 150 mW

최대 작동 온도:: + 150 C

시리즈:: RN1108

포장:: 릴

DC 전류 이득 hFE 최대:: 80

상표:: 도시바

상품 유형:: BJT - 양극성 트랜지스터 - 사전 바이어스

공장 팩 수량:: 8000

하위 카테고리:: 트랜지스터

Tags: RN1108, RN110, RN11, RN1

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Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

RN1108MFV(TPL3) 설명

***et: Trans Digital BJT NPN 50V 100mA 3-Pin VESM T/R

***i-Key: TRANS PREBIAS NPN 150MW VESM

***: 100MA 50V 3PIN 22K X 47KOHM

***ca Corp: Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon

***ical: Trans Digital BJT NPN 50V 100mA 3-Pin VMT T/R

***nell: DIGITAL TRANSISTOR, 50V, 0.1A; Digital Transistor Polarity: Single NPN; Collector Emitter Voltage V(br)ceo: 50V; Continuous Collector Current Ic: 100mA; Base Input Resistor R1: 4.7kohm; Base-Emitter Resistor R2: 47kohm; Resistor Ratio, R1 / R2: 0.1(Ratio); RF Transistor Case: SOT-723; No. of Pins: 3 Pin; Product Range: DTC043Z Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)

***ure Electronics: DTC143Z Series 50 V 100 mA Surface Mount NPN Digital Transistor - VMT-3

***ical: Trans Digital BJT NPN 50V 100mA 150mW 3-Pin VMT T/R

***ark: Digital Transistor Polarity:single Npn; Collector Emitter Voltage V(Br)Ceo:50V; Continuous Collector Current Ic:100Ma; Base Input Resistor R1:4.7Kohm; Base-Emitter Resistor R2:47Kohm; Resistor Ratio, R1 / R2:0.1(Ratio) Rohs Compliant: Yes

*** Stop Electro: Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon

***ure Electronics: DTC123J Series 50 V 100 mA Surface Mount NPN Digital Transistor - VMT-3

***ical: Trans Digital BJT NPN 50V 100mA 3-Pin VMT T/R

***ark: TRANSISTOR, NPN, 50V, 0.1A, SC-1055; Collector Emitter Voltage V(br)ceo:50V; Continuous Collector Current Ic:100mA; Base Input Resistor R1:2.2kohm; Base-Emitter Resistor R2:47kohm; Resistor Ratio, R1 / R2:0.047; No. of Pins:3 ;RoHS Compliant: Yes

***et: Trans Digital BJT NPN 50V 100mA 3-Pin VESM T/R

***el Electronic: LDO Regulator Pos 1.8V 0.25A 6-Pin TDFN EP T/R

***i-Key: TRANS PREBIAS NPN 50V 0.1A VESM

***et: Trans Digital BJT NPN 50V 100mA 3-Pin VESM T/R

***i-Key: TRANS PREBIAS NPN 150MW VESM

***: 100MA 50V 3PIN 47K X 22KOHMS

***r Electronics: Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon

***emi: NPN Bipolar Digital Transistor (BRT)

***ical: Trans Digital BJT NPN 50V 100mA 600mW 3-Pin SOT-723 T/R

***ark: Brt Transistor, 50V, 22K/47Kohm, Sot-723; Digital Transistor Polarity:Single Npn; Collector Emitter Voltage V(Br)Ceo:50V; Continuous Collector Current Ic:100Ma; Base Input Resistor R1:22Kohm; Base-Emitter Resistor R2:47Kohm Rohs Compliant: Yes |Onsemi DTC124XM3T5G

Market price

부분 #	제조	설명	재고	가격
RN1108MFV(TPL3) DISTI # 757-RN1108MFV(TPL3)	Toshiba America Electronic Components	Bipolar Transistors - Pre-Biased 100mA 50volts 3Pin 22K x 47Kohms RoHS: Not compliant	0

RN1108MFV(TPL3)

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes