SI2314EDS-T1-GE3

SI2314EDS-T1-GE3
Mfr. #:
SI2314EDS-T1-GE3
제조사:
Vishay / Siliconix
설명:
MOSFET 20V 4.9A 1.25W 33mohm @ 4.5V
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
SI2314EDS-T1-GE3 데이터 시트
배달:
DHL FedEx Ups TNT EMS
지불:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SI2314EDS-T1-GE3 DatasheetSI2314EDS-T1-GE3 Datasheet (P4-P6)SI2314EDS-T1-GE3 Datasheet (P7-P8)
ECAD Model:
추가 정보:
SI2314EDS-T1-GE3 추가 정보
제품 속성
속성 값
제조사:
비쉐이
제품 카테고리:
MOSFET
RoHS:
Y
기술:
상표명:
TrenchFET
포장:
시리즈:
SI2
상표:
비쉐이 / 실리콘닉스
상품 유형:
MOSFET
공장 팩 수량:
3000
하위 카테고리:
MOSFET
부품 번호 별칭:
SI2314EDS-GE3
단위 무게:
0.000282 oz
Tags
SI2314E, SI2314, SI231, SI23, SI2
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
Trans MOSFET N-CH 20V 3.77A 3-Pin SOT-23 T/R
***i-Key
MOSFET N-CH 20V 3.77A SOT23-3
***ark
N CH MOSFET; Transistor Polarity:N Channel; Continuous Drain Current Id:3.77A; Drain Source Voltage Vds:20V; On Resistance Rds(on):27mohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:950mV; Power Dissipation Pd:750mW ;RoHS Compliant: Yes
SI2 Series TrenchFET® Power MOSFETs
Vishay SI2 Series TrenchFET® Power MOSFETs are N-channel MOSFETs designed with 30V V(ds) and are 100% tested gate resistance(Rg). These MOSFETs have gate resistance tested for 1MHz frequency with 0.2Ω to 1.4Ω. These SI2 series MOSFETs operate from -55ºC to 150ºC junction and storage temperature. The SI2 series are ideal for DC/DC converter, Load switch, and power management.
부분 # 제조 설명 재고 가격
SI2314EDS-T1-GE3
DISTI # SI2314EDS-T1-GE3-ND
Vishay SiliconixMOSFET N-CH 20V 3.77A SOT23-3
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)
Temporarily Out of Stock
  • 3000:$0.3350
SI2314EDS-T1-GE3
DISTI # SI2314EDS-T1-GE3
Vishay IntertechnologiesTrans MOSFET N-CH 20V 3.77A 3-Pin SOT-23 T/R - Tape and Reel (Alt: SI2314EDS-T1-GE3)
RoHS: Not Compliant
Min Qty: 3000
Container: Reel
Americas - 0
  • 3000:$0.3049
  • 6000:$0.2959
  • 12000:$0.2839
  • 18000:$0.2759
  • 30000:$0.2689
SI2314EDS-T1-GE3
DISTI # 781-SI2314EDS-GE3
Vishay IntertechnologiesMOSFET 20V 4.9A 1.25W 33mohm @ 4.5V
RoHS: Compliant
0
  • 3000:$0.3050
SI2314EDS-T1-GE3Vishay Intertechnologies 3000
    영상 부분 # 설명
    SI2314EDS-T1-E3

    Mfr.#: SI2314EDS-T1-E3

    OMO.#: OMO-SI2314EDS-T1-E3

    MOSFET N-CHANNEL 20-V (D-S) MOSFET
    SI2314EDS-T1-GE3

    Mfr.#: SI2314EDS-T1-GE3

    OMO.#: OMO-SI2314EDS-T1-GE3

    MOSFET 20V 4.9A 1.25W 33mohm @ 4.5V
    SI2314EDS

    Mfr.#: SI2314EDS

    OMO.#: OMO-SI2314EDS-1190

    신규 및 오리지널
    SI2314EDS-T1-E3

    Mfr.#: SI2314EDS-T1-E3

    OMO.#: OMO-SI2314EDS-T1-E3-VISHAY

    MOSFET N-CH 20V 3.77A SOT23-3
    SI2314EDS-T1-GE3

    Mfr.#: SI2314EDS-T1-GE3

    OMO.#: OMO-SI2314EDS-T1-GE3-VISHAY

    RF Bipolar Transistors MOSFET 20V 4.9A 1.25W 33mohm @ 4.5V
    유효성
    재고:
    Available
    주문 시:
    3000
    수량 입력:
    SI2314EDS-T1-GE3의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
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