BSO110N03MSGXUMA1

Mfr. #:: BSO110N03MSGXUMA1
제조사:: Infineon Technologies
설명:: MOSFET N-Ch 30V 12.1A DSO-8 OptiMOS 3M
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: BSO110N03MSGXUMA1 데이터 시트
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ECAD Model:

제품 속성
속성 값

제조사:: 인피니언

제품 카테고리:: MOSFET

RoHS:: Y

기술:: 시

장착 스타일:: SMD/SMT

패키지/케이스:: SO-8

채널 수:: 1 Channel

트랜지스터 극성:: N-채널

Vds - 드레인 소스 항복 전압:: 30 V

Id - 연속 드레인 전류:: 12.1 A

Rds On - 드레인 소스 저항:: 9.2 mOhms

Vgs th - 게이트 소스 임계 전압:: 1 V

Vgs - 게이트 소스 전압:: 20 V

Qg - 게이트 차지:: 20 nC

최소 작동 온도:: - 55 C

최대 작동 온도:: + 150 C

Pd - 전력 손실:: 2.5 W

구성:: 하나의

채널 모드:: 상승

상표명:: 옵티모스

포장:: 릴

키:: 1.75 mm

길이:: 4.9 mm

시리즈:: OptiMOS 3M

트랜지스터 유형:: 1 N-Channel

너비:: 3.9 mm

상표:: 인피니언 테크놀로지스

순방향 트랜스컨덕턴스 - 최소:: 16 S

가을 시간:: 4.4 ns

습기에 민감한:: 네

상품 유형:: MOSFET

상승 시간:: 4.4 ns

공장 팩 수량:: 2500

하위 카테고리:: MOSFET

일반적인 끄기 지연 시간:: 9.5 ns

일반적인 켜기 지연 시간:: 7.8 ns

부품 번호 별칭:: BSO110N03MS BSO11N3MSGXT G SP000446062

단위 무게:: 0.019048 oz

Tags: BSO110N03MSG, BSO110N03M, BSO110, BSO11, BSO1, BSO

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

BSO110N03MSGXUMA1 설명

***ure Electronics: Mosfet Transistor, N Channel, 10 A, 30 V, 0.0092 Ohm, 10 V, 2 V

***ment14 APAC: MOSFET, N-CH, 30V, 10A, SOIC-8; Transistor Polarity:N Channel; Continuous Drain Current Id:10A; Source Voltage Vds:30V; On Resistance

***ineon SCT: Ultra low gate and output charge, together with lowest on-state resistance in small footprint packages, make OptiMOS™ 25V the best choice for the demanding requirements of voltage regulator solutions in servers, datacom and telecom applications, PG-DSO-8, RoHS

***nell: MOSFET, N-CH, 30V, 10A, SOIC-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 10A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0092ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2V; Power Dissipation Pd: 1.56W; Transistor Case Style: SOIC; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)

***ineon: With the new OptiMOS 30V product family, Infineon sets new standards in power density and energy efficiency for discrete power MOSFETs and system in package. | Summary of Features: Ultra low gate and output charge; Lowest on-state resistance in small footprint packages; Easy to design in | Benefits: Increased battery lifetime; Improved EMI behavior making external snubber networks obsolete; Saving costs; Saving space; Reducing power losses | Target Applications: Onboard charger; Notebook; Mainboard; DC-DC; VRD/VRM; Motor control; LED

***ure Electronics: Single N-Channel 30 V 2 W 12.5 nC Silicon Surface Mount Mosfet - SOIC-8

***ical: Trans MOSFET N-CH 30V 10.3A Automotive 8-Pin SO T/R

***(Formerly Allied Electronics): MOSFET; N Channel; MOS; Trans; 30V; 10.3A; SO8

***S: French Electronic Distributor since 1988

***ure Electronics: N-Channel 30 V 11.9 mOhm Surface Mount Schottky Diode Mosfet - SOIC-8

***ark: Mosfet,+Sch,n Channel,30V,11A,so8; Transistor Polarity:n Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:11A; On Resistance Rds(On):0.0085Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V Rohs Compliant: Yes

***nell: MOSFET,+SCH,N CH,30V,11A,SO8; Transistor Polarity: N Channel; Continuous Drain Current Id: 11A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0085ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.5V; Power Dissipation Pd: 1.55W; Transistor Case Style: SOIC; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019); Current Id Max: 11A; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Voltage Vgs Max: 20V

***ark: Mosfet Transistor, N Channel, 10.8 A, 30 V, 0.011 Ohm, 4.5 V, 3 V

***(Formerly Allied Electronics): MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 11 Milliohms;ID 10.8A;SO-8;PD 2.5W;VGS +/-20

***eco: Transistor MOSFET N Channel 30 Volt 10.8.6 Amp 8 Pin SOIC

***ure Electronics: Single N-Channel 30 V 14 mOhm 17 nC HEXFET® Power Mosfet - SOIC-8

***S.I.T. Europe - USA - Asia: Small Signal Field-Effect Transistor, 10.8A I(D), 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA

***nell: MOSFET, N, LOGIC, SO-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 10.8A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.011ohm; Rds(on) Test Voltage Vgs: 4.5V; Threshold Voltage Vgs: 3V; Power Dissi

***(Formerly Allied Electronics): IRF8707TRPBF N-channel MOSFET Transistor, 11 A, 30 V, 8-Pin SOIC

***ure Electronics: Single N-Channel 30 V 17.5 mOhm 9.3 nC HEXFET® Power Mosfet - SOIC-8

*** Source Electronics: Trans MOSFET N-CH Si 30V 11A 8-Pin SOIC T/R / MOSFET N-CH 30V 11A 8-SOIC

***ark: N Channel Mosfet, 30V, 11A, Soic; Transistor Polarity:n Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:11A; On Resistance Rds(On):0.0119Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V Rohs Compliant: Yes

***ark: Mosfet Transistor, N Channel, 11 A, 30 V, 13.8 Mohm, 10 V, 1.8 V

***ure Electronics: Single N-Channel 30 V 18.2 mOhm 11 nC HEXFET® Power Mosfet - SOIC-8

***ineon: Benefits: RoHS Compliant; Industry-leading quality; Low RDS(ON) at 4.5V VGS; Fully Characterized Avalanche Voltage and Current; Ultra-Low Gate Impedance

***nell: MOSFET, N, LOGIC, SO-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 11A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0138ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.8V; Power Dissi

***trelec: Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 11 / Drain-Source Voltage (Vds) V = 30 / ON Resistance (Rds(on)) mOhm = 13.8 / Gate-Source Voltage V = 20 / Fall Time ns = 3.1 / Rise Time ns = 6.2 / Turn-OFF Delay Time ns = 10 / Turn-ON Delay Time ns = 6.9 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SO-8 / Pins = 8 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Power Dissipation (Pd) W = 2.5

***ure Electronics: Single P-Channel 30 V 1.45 W 20.5 nC Silicon Surface Mount Mosfet - SOIC-8

***ical: Trans MOSFET P-CH 30V 9.9A Automotive 8-Pin SO T/R

***ark: Mosfet, P-Ch, 30V, 9.9A, Soic Rohs Compliant: Yes

Market price

부분 #	제조	설명	재고	가격
BSO110N03MSGXUMA1 DISTI # V72:2272_06390999	Infineon Technologies AG	Trans MOSFET N-CH 30V 10A 8-Pin DSO T/R RoHS: Compliant	5000	3000:$0.2775 1000:$0.3083 500:$0.3731 250:$0.4054 100:$0.4373 25:$0.6025 10:$0.7543 1:$0.9093
BSO110N03MSGXUMA1 DISTI # V36:1790_06390999	Infineon Technologies AG	Trans MOSFET N-CH 30V 10A 8-Pin DSO T/R RoHS: Compliant	0	2500000:$0.2615 1250000:$0.2617 250000:$0.2782 25000:$0.3055 2500:$0.3100
BSO110N03MSGXUMA1 DISTI # BSO110N03MSGXUMA1TR-ND	Infineon Technologies AG	MOSFET N-CH 30V 10A 8DSO RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR)	Temporarily Out of Stock	2500:$0.3418
BSO110N03MSGXUMA1 DISTI # 33950970	Infineon Technologies AG	Trans MOSFET N-CH 30V 10A 8-Pin DSO T/R RoHS: Compliant	5000	23:$0.3075
BSO110N03MSGXUMA1 DISTI # BSO110N03MSGXUMA1	Infineon Technologies AG	Trans MOSFET N-CH 30V 10A 8-Pin DSO T/R - Tape and Reel (Alt: BSO110N03MSGXUMA1) RoHS: Compliant Min Qty: 2500 Container: Reel	Americas - 0	25000:$0.2849 15000:$0.2899 10000:$0.2999 5000:$0.3109 2500:$0.3229
BSO110N03MSGXUMA1 DISTI # 50Y1819	Infineon Technologies AG	MOSFET Transistor, N Channel, 10 A, 30 V, 0.0092 ohm, 10 V, 2 V RoHS Compliant: Yes	0	1000:$0.3640 500:$0.3940 250:$0.4240 100:$0.4530 50:$0.5370 25:$0.6200 10:$0.7030 1:$0.8380
BSO110N03MS G DISTI # 726-BSO110N03MSG	Infineon Technologies AG	MOSFET N-Ch 30V 12.1A DSO-8 OptiMOS 3M RoHS: Compliant	2490	1:$0.8300 10:$0.6960 100:$0.4490 1000:$0.3600
BSO110N03MSGXUMA1 DISTI # 726-BSO110N03MSGXUMA	Infineon Technologies AG	MOSFET N-Ch 30V 12.1A DSO-8 OptiMOS 3M RoHS: Compliant	0	1:$0.8300 10:$0.6960 100:$0.4490 1000:$0.3600
BSO110N03MSGXUMA1 DISTI # 8268989P	Infineon Technologies AG	MOSFET N-CH 10A 30V OPTIMOS3 DSO8, RL	12450	1000:£0.2720 500:£0.3120 250:£0.3160 100:£0.3230
BSO110N03MSGXUMA1 DISTI # BSO110N03MSGXUMA1	Infineon Technologies AG	Transistor: N-MOSFET,unipolar,30V,12.1A,1.56W,PG-DSO-8	2480	500:$0.3198 100:$0.3435 25:$0.3953 5:$0.4471 1:$0.5439
BSO110N03MSGXUMA1 DISTI # 2480751RL	Infineon Technologies AG	MOSFET, N-CH, 30V, 10A, SOIC-8 RoHS: Compliant	0	2500:$0.5440 1000:$0.5540 100:$0.6910 10:$1.0800 1:$1.2800
BSO110N03MSGXUMA1 DISTI # 2480751	Infineon Technologies AG	MOSFET, N-CH, 30V, 10A, SOIC-8 RoHS: Compliant	1140	2500:$0.5440 1000:$0.5540 100:$0.6910 10:$1.0800 1:$1.2800
BSO110N03MSGXUMA1 DISTI # 2480751	Infineon Technologies AG	MOSFET, N-CH, 30V, 10A, SOIC-8	1111	500:£0.3000 250:£0.3220 100:£0.3450 10:£0.5890 1:£0.7310

BSO110N03MSGXUMA1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes