IRFH5206TRPBF

Mfr. #:: IRFH5206TRPBF
제조사:: Infineon / IR
설명:: MOSFET 60V SINGLE N-CH 6.7mOhms 40nC
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: IRFH5206TRPBF 데이터 시트
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HTML Datasheet:: IRFH5206TRPBF Datasheet IRFH5206TRPBF Datasheet (P4-P6)IRFH5206TRPBF Datasheet (P7-P9)
ECAD Model:

제품 속성
속성 값

제조사:: 인피니언

제품 카테고리:: MOSFET

RoHS:: Y

기술:: 시

장착 스타일:: SMD/SMT

패키지/케이스:: PQFN-8

채널 수:: 1 Channel

트랜지스터 극성:: N-채널

Vds - 드레인 소스 항복 전압:: 60 V

Id - 연속 드레인 전류:: 89 A

Rds On - 드레인 소스 저항:: 6.7 mOhms

Vgs th - 게이트 소스 임계 전압:: 4 V

Vgs - 게이트 소스 전압:: 20 V

Qg - 게이트 차지:: 40 nC

최소 작동 온도:: - 55 C

최대 작동 온도:: + 150 C

Pd - 전력 손실:: 100 W

구성:: 하나의

채널 모드:: 상승

포장:: 릴

키:: 0.83 mm

길이:: 6 mm

트랜지스터 유형:: 1 N-Channel

너비:: 5 mm

상표:: 인피니언 / IR

순방향 트랜스컨덕턴스 - 최소:: 73 S

가을 시간:: 8.2 ns

상품 유형:: MOSFET

상승 시간:: 11 ns

공장 팩 수량:: 4000

하위 카테고리:: MOSFET

일반적인 끄기 지연 시간:: 22 ns

일반적인 켜기 지연 시간:: 6.4 ns

부품 번호 별칭:: SP001556276

Tags: IRFH5206, IRFH520, IRFH52, IRFH5, IRFH, IRF

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We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IRFH5206TRPBF 설명

***ineon SCT: 60V Single N-Channel HEXFET Power MOSFET in a 5mm X 6mm PQFN package, PG-TDSON-8, RoHS

***trelec: MOSFET Operating temperature: -55...+150 °C Housing type: PQFN-8 (3x3) Polarity: N Variants: Enhancement mode Power dissipation: 100 W

***ineon: Benefits: RoHS Compliant | Target Applications: Battery Operated Drive; Isolated Primary Side MOSFETs; Isolated Secondary Side SyncRec MOSFETs

***ark: MOSFET Transistor; Transistor Polarity:N Channel; Continuous Drain Current Id:89A; Drain Source Voltage Vds:60V; On Resistance Rds(on):5.6mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2V; Power Dissipation Pd:3.6W ;RoHS Compliant: Yes

*** Electronics: INFINEON IRFH5006TRPBF MOSFET Transistor, N Channel, 21 A, 60 V, 0.0035 ohm, 10 V, 4 VNew

***ure Electronics: Single N-Channel 60 V 4.1 mOhm 69 nC HEXFET® Power Mosfet - PQFN 5 x 6 mm

***ineon SCT: 60V Single N-Channel HEXFET Power MOSFET in a 5mm X 6mm PQFN package, PG-TDSON-8, RoHS

***(Formerly Allied Electronics): MOSFET; 60V; 100A; 4.1mOhm; 67 nC Qg; PQFN5x6

***Yang: Trans MOSFET N-CH 60V 21A 8-Pin QFN T/R - Tape and Reel

***ineon: Benefits: RoHS Compliant | Target Applications: Battery Operated Drive; Isolated Primary Side MOSFETs; Isolated Secondary Side SyncRec MOSFETs

***nell: MOSFET, N-CH, 60V, 21A, PQFN-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 21A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.0035ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 3.6W; Transistor Case Style: PQFN; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: HEXFET Series; Automotive Qualification Standard: -; MSL: MSL 3 - 168 hours; SVHC: No SVHC (27-Jun-2018)

***Yang: Trans MOSFET N-CH 60V 23A 8-Pin PQFN T/R - Product that comes on tape, but is not reeled

***ineon SCT: 60V Single N-Channel HEXFET Power MOSFET in a PQFN 5mm x 6mm package, PG-TDSON-8, RoHS

***ure Electronics: Single N-Channel 60 V 3.2 mOhm 110 nC HEXFET® Power Mosfet - PQFN 5 x 6 mm

*** Source Electronics: MOSFET N-CH 60V 23A 6-PQFN / Trans MOSFET N-CH Si 60V 23A 8-Pin PQFN EP T/R

***ark: Transistor Polarity:n Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:100A; On Resistance Rds(On):0.0026Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.7V Rohs Compliant: Yes

***ineon: Benefits: RoHS Compliant; Improved Gate, Avalanche and Dynamic dV/dt Ruggedness; Fully Characterized Capacitance and Avalanche SOA; Enhanced body diode dV/dt and dI/dt Capability

***nell: MOSFET, N-CH, 60V, 100A, PQFN-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 100A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.0026ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.7V; Power Dissipation Pd: -; Transistor Case Style: QFN; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)

***ure Electronics: Single N-Channel 100 V 12.4 mOhm 48 nC HEXFET® Power Mosfet - PQFN 5 x 6 mm

***ineon SCT: 100V Single N-Channel HEXFET Power MOSFET in a PQFN package, PG-TDSON-8, RoHS

***Yang: Trans MOSFET N-CH 10V 11A 8-Pin QFN T/R - Tape and Reel

***ineon: Benefits: RoHS Compliant | Target Applications: Battery Operated Drive; Isolated Primary Side MOSFETs; Isolated Secondary Side SyncRec MOSFETs

***ark: MOSFET Transistor; Transistor Polarity:N Channel; Continuous Drain Current Id:63A; Drain Source Voltage Vds:100V; On Resistance Rds(on):10.3mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2V; Power Dissipation Pd:3.6W ;RoHS Compliant: Yes

***nell: MOSFET, N-CH, 100V, 63A, PQFN-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 63A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.0103ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 114W; Transistor Case Style: PQFN; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: HEXFET Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)

***trelec: Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 11 / Drain-Source Voltage (Vds) V = 100 / ON Resistance (Rds(on)) mOhm = 12.4 / Gate-Source Voltage V = 20 / Fall Time ns = 6.4 / Rise Time ns = 9.6 / Turn-OFF Delay Time ns = 22 / Turn-ON Delay Time ns = 7.8 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = PQFN / Pins = 8 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Power Dissipation (Pd) W = 114

***ernational Rectifier: 100V Single N-Channel HEXFET Power MOSFET in a PQFN package

***(Formerly Allied Electronics): MOSFET 100V, Gen 10.7, 11.68 mOhm max, 56.2 nC Qg

***trelec: MOSFET PQFN-8 (5x6) N 100V 11 A

***et: Trans MOSFET N-CH 10V 11A 8-Pin QFN T/R

***S.I.T. Europe - USA - Asia: Power Field-Effect Transistor, 11A I(D), 100V, 0.0124ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

***ment14 APAC: MOSFET,N CH,100V,11A,PQFN56; Transistor Polarity:N Channel; Continuous Drain Current Id:11A; Drain Source Voltage Vds:100V; On Resistance Rds(on):10.3mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:114W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:QFN; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:63A; Power Dissipation Pd:114W; Voltage Vgs Max:20V

***(Formerly Allied Electronics): MOSFET, 100V, 55A, 14.9 mOhm, 39 nC Qg, PQFN 5x6

***ernational Rectifier: 100V Single N-Channel HEXFET Power MOSFET in a PQFN package

***ark: MOSFET Transistor; Transistor Polarity:N Channel; Continuous Drain Current Id:55A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.0126ohm; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:2V ;RoHS Compliant: Yes

***ment14 APAC: MOSFET,N CH,100V,55A,PQFN56; Transistor Polarity:N Channel; Drain Source Voltage Vds:100V; On Resistance Rds(on):12.6mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:3.6W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:QFN; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:55A; Power Dissipation Pd:3.6W; Voltage Vgs Max:20V

***ernational Rectifier: 30V Single N-Channel HEXFET Power MOSFET in a 3mm X 3mm PQFN package

***(Formerly Allied Electronics): MOSFET, 30V, 16A, 7.1 MOHM, 9.6 NC QG, PQFN33

***et: Trans MOSFET N-CH 30V 16A 8-Pin QFN T/R

***ment14 APAC: MOSFET, N CH, 30V, 16A, PQFN33; Transistor Polarity:N Channel; Continuous Drain Current Id:16A; Drain Source Voltage Vds:30V; On Resistance Rds(on):7.1mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.8V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PQFN; No. of Pins:8; SVHC:No SVHC (15-Dec-2010); Current Id Max:16mA; Package / Case:PQFN; Power Dissipation Pd:2.8W; Termination Type:SMD; Transistor Type:Power MOSFET; Voltage Vds Typ:30V; Voltage Vgs Max:1.8V; Voltage Vgs Rds on Measurement:10V

Market price

부분 #	제조	설명	재고	가격
IRFH5206TRPBF DISTI # 27112190	Infineon Technologies AG	Trans MOSFET N-CH 60V 16A 8-Pin PQFN EP T/R	2480	95:$0.6637
IRFH5206TRPBF DISTI # IRFH5206TRPBFCT-ND	Infineon Technologies AG	MOSFET N-CH 60V 16A 8-PQFN RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	760In Stock	500:$1.0112 100:$1.3001 10:$1.6180 1:$1.7900
IRFH5206TRPBF DISTI # IRFH5206TRPBFDKR-ND	Infineon Technologies AG	MOSFET N-CH 60V 16A 8-PQFN RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	760In Stock	500:$1.0112 100:$1.3001 10:$1.6180 1:$1.7900
IRFH5206TRPBF DISTI # IRFH5206TRPBFTR-ND	Infineon Technologies AG	MOSFET N-CH 60V 16A 8-PQFN RoHS: Compliant Min Qty: 4000 Container: Tape & Reel (TR)	Limited Supply - Call
IRFH5206TRPBF DISTI # SP001556276	Infineon Technologies AG	Trans MOSFET N-CH 60V 16A 8-Pin QFN T/R (Alt: SP001556276) RoHS: Compliant Min Qty: 1 Container: Tape and Reel	Europe - 0	1:€1.1559 10:€0.9699 25:€0.8099 50:€0.7059 100:€0.6919 500:€0.6739 1000:€0.6609
IRFH5206TRPBF DISTI # 74R1490	Infineon Technologies AG	MOSFET Transistor,Transistor Polarity:N Channel,Continuous Drain Current Id:89A,Drain Source Voltage Vds:60V,On Resistance Rds(on):0.0056ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2V,Power Dissipation Pd:3.6W RoHS Compliant: Yes	2480	1:$0.5310 25:$0.5310 50:$0.5310 100:$0.5310 250:$0.5310 500:$0.5310 1000:$0.5310
IRFH5206TRPBF DISTI # 74R1491	Infineon Technologies AG	MOSFET Transistor, FULL REEL,Transistor Polarity:N Channel,Continuous Drain Current Id:89A,Drain Source Voltage Vds:60V,On Resistance Rds(on):0.0056ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2V,No. of Pins:8Pins RoHS Compliant: Yes	4000	1:$0.6610 4000:$0.6360 8000:$0.6110
IRFH5206TRPBF DISTI # 70019274	Infineon Technologies AG	MOSFET,60V,87A,7mOhm,40 nC Qg,PQFN5x6 RoHS: Compliant	0	4000:$0.7220 8000:$0.7080 20000:$0.6860
IRFH5206TRPBF DISTI # 942-IRFH5206TRPBF	Infineon Technologies AG	MOSFET 60V SINGLE N-CH 6.7mOhms 40nC RoHS: Compliant	0
IRFH5206TRPBF DISTI # 2577225	Infineon Technologies AG	MOSFET, N-CH, 60V, 16A, PQFN-8 RoHS: Compliant	0	4000:$1.3100 12000:$1.2600
IRFH5206TRPBF DISTI # 2577162	Infineon Technologies AG	MOSFET, N-CH, 60V, 16A, PQFN-8 RoHS: Compliant	0	1:$2.8400 10:$2.5600 100:$2.0600 500:$1.6100

영상	부분 #	설명
	Mfr.#: IRFH5215TRPBF OMO.#: OMO-IRFH5215TRPBF	MOSFET 150V 1 N-CH HEXFET 58mOhms 20nC
	Mfr.#: IRFH5250DTR2PBF OMO.#: OMO-IRFH5250DTR2PBF	MOSFET MOSFT 25V FETky 100A 1.4mOhm 39nC Qg
	Mfr.#: IRFH5207TR2PBF OMO.#: OMO-IRFH5207TR2PBF	MOSFET MOSFT 75V Gen 10.7 10.11mOhm 43.5nC Qg
	Mfr.#: IRFH5206TR2PBF OMO.#: OMO-IRFH5206TR2PBF	MOSFET MOSFT 60V 87A 7mOhm 40nC Qg
	Mfr.#: IRFH5250DTRPBF. OMO.#: OMO-IRFH5250DTRPBF--1190	TRENCH_MOSFETS , ROHS COMPLIANT: YES
	Mfr.#: IRFH5210TR2PBF OMO.#: OMO-IRFH5210TR2PBF-INFINEON-TECHNOLOGIES	MOSFET N-CH 100V 10A 5X6 PQFN
	Mfr.#: IRFH5204TRPBF. OMO.#: OMO-IRFH5204TRPBF--1190	신규 및 오리지널
	Mfr.#: IRFH5206TRPBF. OMO.#: OMO-IRFH5206TRPBF--1190	신규 및 오리지널
	Mfr.#: IRFH5210TRPBF. OMO.#: OMO-IRFH5210TRPBF--1190	Transistor Polarity:N Channel, Continuous Drain Current Id:55A, Drain Source Voltage Vds:100V, On Resistance Rds(on):0.0126ohm, Rds(on) Test Voltage Vgs:10V, Threshold Voltage Vgs:4V, Power Diss
	Mfr.#: IRFH5250TRPBF OMO.#: OMO-IRFH5250TRPBF-INFINEON-TECHNOLOGIES	MOSFET N-CH 25V 45A PQFN

IRFH5206TRPBF

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes