FCA36N60NF

Mfr. #:: FCA36N60NF
제조사:: ON Semiconductor
설명:: Darlington Transistors MOSFET 600V N-Ch SupreMOS FRFET MOSFET
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: FCA36N60NF 데이터 시트
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ECAD Model:
추가 정보:: FCA36N60NF 추가 정보

제품 속성
속성 값

제조사: 페어차일드

제품 카테고리: FET - 단일

포장: 튜브

단위 무게: 0.225789 oz

장착 스타일: 구멍을 통해

패키지 케이스: TO-3P-3

기술: 시

채널 수: 1 Channel

트랜지스터형: 1 N-Channel

Pd 전력 손실: 312 W

가을철: 4 ns

상승 시간: 17 ns

Vgs 게이트 소스 전압: 30 V

Id-연속-드레인-전류: 34.9 A

Vds-드레인-소스-고장-전압: 600 V

Vgs-th-Gate-Source-Threshold-Voltage: 3.7 V

Rds-On-Drain-Source-Resistance: 80 mOhms

트랜지스터 극성: N-채널

Qg-Gate-Charge: 86 nC

순방향 트랜스컨덕턴스-최소: 39 S

Tags: FCA3, FCA

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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

FCA36N60NF 설명

***Semiconductor: Power MOSFET, N-Channel, SUPREMOS®, FRFET®, 600 V, 34.9 A, 95 mΩ, TO-3P

***Components: N-Channel MOSFET, 35 A, 600 V, 3-Pin TO-3PN ON Semiconductor FCA36N60NF

***et: Trans MOSFET N-CH 600V 34.9A 3-Pin(3+Tab) TO-3P(N) Rail

***p One Stop Global: Trans MOSFET N-CH 600V 34.9A 3-Pin(3+Tab) TO-3PN Rail

***i-Key: MOSFET N-CH 600V 34.9A TO3PN

***ark: MOSFET, N CH, 600V, 34.9A, TO3PN; Transistor Polarity:N Channel; Continuous Drain Current Id:34.9A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.08ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3.7V ;RoHS Compliant: Yes

***ment14 APAC: MOSFET, N CH, 600V, 34.9A, TO3PN; Transistor Polarity:N Channel; Continuous Drain Current Id:34.9A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.08ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3.7V; Power Dissipation Pd:312W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-3PN; No. of Pins:3; SVHC:No SVHC (18-Jun-2012)

***rchild Semiconductor: The SupreMOS® MOSFET is Fairchild Semiconductor’s next generation of high voltage super-junction (SJ) technology employing a deep trench filling process that differentiates it from the conventional SJ MOSFETs. This advanced technology and precise process control provides lowest Rsp on-resistance, superior switching performance and ruggedness. SupreMOS MOSFET is suitable for high frequency switching power converter applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications. SupreMOS FRFET® MOSFET’s optimized body diode reverse recovery performance can remove additional component and improve system reliability.

FCA36N60NF 추가 정보

SupreMOS Super-Junction MOSFETs: ON Semiconductor SupreMOS™ Super-Junction MOSFETs are the next generation of high voltage super-junction MOSFETs which employ a deep trench filling process that differentiates it from preceding multi-epi based technologies. By utilizing advanced technology and precise process control, these SupreMOS™ Super-Junction MOSFETs provide world class Rsp, superior switching performance and ruggedness. Features include ultra low gate charge, low effective output capacitance and are 100% avalanche tested. These SupreMOS™ MOSFETs fit the industry's AC-DC SMPS requirements for PFC, server/telecom power, FPD TV power, ATX power, and industrial power applications.Learn More

Market price

부분 #	제조	설명	재고	가격
FCA36N60NF DISTI # V79:2366_17796495	ON Semiconductor	SM 600V 95MOHM F TO3PN	224	250:$6.2630 100:$6.5560 25:$7.3740 10:$7.7230 1:$8.4050
FCA36N60NF DISTI # FCA36N60NF-ND	ON Semiconductor	MOSFET N-CH 600V 34.9A TO3PN RoHS: Compliant Min Qty: 1 Container: Tube	405In Stock	10:$10.9400 1:$12.1600
FCA36N60NF DISTI # 26119305	ON Semiconductor	SM 600V 95MOHM F TO3PN	224	100:$6.5560 25:$7.3740 10:$7.7230 2:$8.4050
FCA36N60NF DISTI # FCA36N60NF	ON Semiconductor	Trans MOSFET N-CH 600V 34.9A 3-Pin(3+Tab) TO-3P(N) Rail - Rail/Tube (Alt: FCA36N60NF) RoHS: Compliant Min Qty: 450 Container: Tube	Americas - 0	450:$5.6900 900:$5.6900 1800:$5.5900 2700:$5.4900 4500:$5.3900
FCA36N60NF DISTI # 54T8299	ON Semiconductor	SM 600V 95MOHM F TO3PN / TUBE	0	1:$9.9500 10:$8.9300 25:$8.1400 50:$7.6100 100:$7.0800 250:$5.9300 500:$5.7500
FCA36N60NF DISTI # 512-FCA36N60NF	ON Semiconductor	MOSFET 600V N-Ch SupreMOS FRFET MOSFET RoHS: Compliant	339	1:$10.5200 10:$9.5100 25:$9.0700 100:$7.8700 250:$7.5200
FCA36N60NF	Fairchild Semiconductor Corporation	Power Field-Effect Transistor, 34.9A I(D), 600V, 0.095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant	1405	1000:$6.4600 500:$6.8000 100:$7.0800 25:$7.3800 1:$7.9500
FCA36N60NF DISTI # 8651233P	ON Semiconductor	MOSFET NCH 600V 34A SUPREMOS FRFET TO3PN, TU	166	5:£7.3400 50:£6.7900 225:£5.9000 450:£5.6300
FCA36N60NF	ON Semiconductor	Power Field-Effect Transistor, 34.9A I(D), 600V, 0.095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant	Europe - 450
FCA36N60NF DISTI # C1S541901508124	ON Semiconductor	Trans MOSFET N-CH 600V 34.9A 3-Pin(3+Tab) TO-3PN Tube RoHS: Compliant	224	100:$6.5490 25:$7.3620 10:$7.7580 1:$8.3750
FCA36N60NF DISTI # 1971834	ON Semiconductor	MOSFET, N CH, 600V, 34.9A, TO3PN RoHS: Compliant	0	1:£8.3700 5:£7.8100 10:£6.7400 50:£6.3000 100:£5.8500

FCA36N60NF

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes