IXTX550N055T2

IXTX550N055T2
Mfr. #:
IXTX550N055T2
제조사:
Littelfuse
설명:
Gate Drivers GigaMOS Trench T2 HiperFET PWR MOSFET
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
IXTX550N055T2 데이터 시트
배달:
DHL FedEx Ups TNT EMS
지불:
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ECAD Model:
추가 정보:
IXTX550N055T2 추가 정보
제품 속성
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제조사
익시스
제품 카테고리
PMIC - 게이트 드라이버
Tags
IXTX, IXT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***i-Key
MOSFET N-CH 55V 550A PLUS247
Electrical Vehicle DC Fast Chargers
DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.
GigaMOS™ TrenchT2™ Power MOSFETs
IXYS GigaMOS™ TrenchT2™ standard and HiPerFET™ Power MOSFETs are offered with drain-to-source voltage ratings from 40V to 170V and provide high current capabilities of up to 600A (Tc=@25ºC). The combined high current ratings of these devices and available compact package options provide designers the ability to control more power within a smaller footprint. These new IXYS GigaMOS Power MOSFETs incorporate IXYS TrenchT2 Technology, allowing for improved channel density while achieving lower on-state resistance and gate charge to facilitate energy-efficient switching at high speeds. These IXYS GigaMOS TrenchT2 Power MOSFETs eliminate multiple paralleled lower current rated MOSFET devices and provide the ability to control more power within a smaller footprint. These devices are designed for use in a wide range of applications, including synchronous rectification, DC-DC converter, battery charger, and switch-mode and resonant-mode power supplies.
부분 # 제조 설명 재고 가격
IXTX550N055T2
DISTI # IXTX550N055T2-ND
IXYS CorporationMOSFET N-CH 55V 550A PLUS247
RoHS: Compliant
Min Qty: 30
Container: Tube
Temporarily Out of Stock
  • 30:$16.1173
IXTX550N055T2
DISTI # 747-IXTX550N055T2
IXYS CorporationGate Drivers GigaMOS Trench T2 HiperFET PWR MOSFET
RoHS: Compliant
0
  • 1:$19.8000
  • 10:$17.8100
  • 25:$16.2400
  • 50:$15.0500
  • 100:$14.6300
  • 250:$13.4700
  • 500:$12.2800
영상 부분 # 설명
IXTX550N055T2

Mfr.#: IXTX550N055T2

OMO.#: OMO-IXTX550N055T2

MOSFET GigaMOS Trench T2 HiperFET PWR MOSFET
IXTX550N055T2

Mfr.#: IXTX550N055T2

OMO.#: OMO-IXTX550N055T2-IXYS-CORPORATION

Gate Drivers GigaMOS Trench T2 HiperFET PWR MOSFET
유효성
재고:
Available
주문 시:
3500
수량 입력:
IXTX550N055T2의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
참고 가격(USD)
수량
단가
내선 가격
1
US$18.42
US$18.42
10
US$17.50
US$174.99
100
US$16.58
US$1 657.80
500
US$15.66
US$7 828.50
1000
US$14.74
US$14 736.00
2021년부터 반도체 공급 부족으로 인해 아래 가격은 2021년 이전 정상 가격입니다. 확인을 위해 문의를 보내주세요.
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