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| 부분 # | 제조 | 설명 | 재고 | 가격 |
|---|---|---|---|---|
| BF998RE6327HTSA1 DISTI # BF998RE6327HTSA1TR-ND | Infineon Technologies AG | MOSFET N-CH RF 12V 30MA SOT-143 RoHS: Compliant Min Qty: 9000 Container: Tape & Reel (TR) | Limited Supply - Call | |
| BF 998R E6327 DISTI # 726-BF998RE6327 | Infineon Technologies AG | RF MOSFET Transistors Silicon N Channel MOSFET Tetrode RoHS: Compliant | 0 |
| 영상 | 부분 # | 설명 |
|---|---|---|
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Mfr.#: BF998 |
RF Small Signal Field-Effect Transistor, 2-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET |
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Mfr.#: BF998 // BF1212AS |
신규 및 오리지널 |
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Mfr.#: BF998 E6327 SOT143-MO |
신규 및 오리지널 |
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Mfr.#: BF998B(MOP) OMO.#: OMO-BF998B-MOP--VISHAY |
신규 및 오리지널 |
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Mfr.#: BF998R // BF1212AS |
신규 및 오리지널 |
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Mfr.#: BF998R L6327 OMO.#: OMO-BF998R-L6327-1190 |
신규 및 오리지널 |
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Mfr.#: BF998R,UMX2NTR |
신규 및 오리지널 |
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Mfr.#: BF998RWBGS08 OMO.#: OMO-BF998RWBGS08-1190 |
신규 및 오리지널 |
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Mfr.#: BF998W |
신규 및 오리지널 |
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Mfr.#: BF998E6327 OMO.#: OMO-BF998E6327-1152 |
RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET |
