PMV213SN,215

Mfr. #:: PMV213SN,215
제조사:: Nexperia
설명:: MOSFET TAPE13 PWR-MOS
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: PMV213SN,215 데이터 시트
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HTML Datasheet:: PMV213SN,215 Datasheet PMV213SN,215 Datasheet (P4-P6)PMV213SN,215 Datasheet (P7-P9)PMV213SN,215 Datasheet (P10-P12)PMV213SN,215 Datasheet (P13)
ECAD Model:

제품 속성
속성 값

제조사:: 넥스페리아

제품 카테고리:: MOSFET

RoHS:: Y

기술:: 시

장착 스타일:: SMD/SMT

패키지/케이스:: SOT-23-3

채널 수:: 1 Channel

트랜지스터 극성:: N-채널

Vds - 드레인 소스 항복 전압:: 100 V

Id - 연속 드레인 전류:: 1.9 A

Rds On - 드레인 소스 저항:: 250 mOhms

Vgs th - 게이트 소스 임계 전압:: 2 V

Vgs - 게이트 소스 전압:: 10 V

Qg - 게이트 차지:: 7 nC

최소 작동 온도:: - 55 C

최대 작동 온도:: + 150 C

Pd - 전력 손실:: 2 W

구성:: 하나의

채널 모드:: 상승

포장:: 릴

키:: 1 mm

길이:: 3 mm

트랜지스터 유형:: 1 N-Channel Micro Trench MOSFET

너비:: 1.4 mm

상표:: 넥스페리아

가을 시간:: 3 ns

상품 유형:: MOSFET

상승 시간:: 5 ns

공장 팩 수량:: 3000

하위 카테고리:: MOSFET

일반적인 끄기 지연 시간:: 9.5 ns

일반적인 켜기 지연 시간:: 5.5 ns

부품 번호 별칭:: PMV213SN T/R

단위 무게:: 0.000282 oz

Tags: PMV213SN,2, PMV213S, PMV213, PMV21, PMV2, PMV

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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

PMV213SN,215 설명

***ure Electronics: N-Channel 100 V 250 mOhm 2 W Surface Mount TrenchMOS Standard Level FET SOT-23

***trelec: MOSFET Operating temperature: -55...150 °C Housing type: SOT-23 Polarity: N Power dissipation: 2 W

***enic: 100V 1.9A 280mW 250m¦¸@10V,500mA 4V@1mA N Channel SOT-23(SOT-23-3) MOSFETs ROHS

***roFlash: Small Signal Field-Effect Transistor, 1.9A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB

***ark: MOSFET, N CH, 100V, 1.9A, 3-SOT-23; Transistor Polarity:N Channel; Continuous Drain Current Id:1.9A; Drain Source Voltage Vds:100V; On Resistance Rds(on):213mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V ;RoHS Compliant: Yes

***nell: MOSFET, N, REEL 3K; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:100V; Current, Id Cont:1.9A; Resistance, Rds On:0.25ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:3V; Case Style:SOT-23; Termination Type:SMD; Current, Idm Pulse:7.6A; External Depth:2.5mm; External Length / Height:1.12mm; No. of Pins:3; Power Dissipation:2W; Power, Pd:2W; Power, Ptot:2W; Quantity, Reel:3000; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Transistors, No. of:1; Voltage, Vds Max:100V; Voltage, Vgs th Max:4V; Width, External:3.05mm; Width, Tape:8mm

***ure Electronics: P-Channel 100 V 0.35 Ohm Power MOSFET Surface Mount - SOT-23-6

***el Electronic: Trans MOSFET P-CH 100V 1.6A Automotive 6-Pin SOT-26 T/R

***(Formerly Allied Electronics): MOSFET P-Channel 100V 1.6A SOT23-6

***roFlash: Power Field-Effect Transistor, 1.3A I(D), 100V, 0.35ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

***ment14 APAC: MOSFET,P CH,100V,1.3A,SOT23-6; Transistor Polarity:P Channel; Continuous Drain Current Id:1.6A; Drain Source Voltage Vds:-100V; On Resistance Rds(on):350mohm; Rds(on) Test Voltage Vgs:-10V; Power Dissipation Pd:1.1W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOT-23; No. of Pins:6; SVHC:No SVHC (20-Jun-2011); Current Id Max:-1.6A; Power Dissipation Pd:1.1W; Voltage Vgs Max:-20V

***akorn: Trans MOSFET N-CH 100V 0.1A Automotive 3-Pin SOT-23

***ment14 APAC: MOSFET, N, SOT-23; Transistor Polarity:N Channel; Continuous Drain Current Id:100mA; Source Voltage Vds:100V; On Resistance Rds(on):10ohm;

***el Electronic: Small Signal Field-Effect Transistor, 0.1A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-23, 3 PIN

***ark: ; Transistor Type:MOSFET; Transistor Polarity:N Channel; Continuous Drain Current, Id:0.1A; On Resistance, Rds(on):10ohm; Package/Case:SOT-23; Termination Type:SMD; Power Dissipation, Pd:2.4W; Current, Idm pulse:2A ;RoHS Compliant: Yes

***nell: MOSFET, N, SOT-23; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:100V; Current, Id Cont:0.1A; Resistance, Rds On:10ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:2.4V; Case Style:SOT-23; Termination Type:SMD; Current, Idm Pulse:2A; Device Marking:ZVN3310F; External Depth:2.5mm; External Length / Height:1.12mm; No. of Pins:3; Power Dissipation:2.4W; Power, Pd:0.33W; Power, Ptot:0.33W; SMD Marking:MF; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Transistors, No. of:1; Voltage, Vds Max:100V; Voltage, Vgs th Max:2.4V; Width, External:3.05mm; Width, Tape:8mm

***ure Electronics: N-CH MOSFET SOT-23 100V 250MOHM @ 10V LEAD(PB) AND HALOGEN FREE

***enic: 100V 1.15A 250m´Î@10V1.5A 730mW 4V@250Ã×A N Channel SOT-23-3(TO-236) MOSFETs ROHS

***ical: Trans MOSFET N-CH 100V 1.15A 3-Pin SOT-23 T/R

*** Stop Electro: Small Signal Field-Effect Transistor, 1.15A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB

***nell: MOSFET, N-CH, 100V, 1.5A, SOT23; Transistor Polarity:N Channel; Continuous Drain Current Id:1.5A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.195ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation Pd:1.25W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:TO-236; No. of Pins:3; MSL:MSL 1 - Unlimited; Operating Temperature Range:-55°C to +150°C

***ure Electronics: BSS123 Series 100 V 6 Ohm N-Channel Enhancement Mode Vertical DMOS FET- SOT-23

***ical: Trans MOSFET N-CH 100V 0.17A Automotive 3-Pin SOT-23 T/R

***ment14 APAC: MOSFET,N CH,100V,0.17A,SOT23-3; Transistor Polarity:N Channel; Continuous Drain Current Id:170mA; Drain Source Voltage Vds:100V; On Resistance Rds(on):6ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:300mW; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOT-23; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:170mA; Power Dissipation Pd:300mW; Voltage Vgs Max:20V

***ure Electronics: Single N-Channel 100 V 6 Ohm 2.1 nC SIPMOS® Small Signal Mosfet - SOT-23

***ical: Trans MOSFET N-CH 100V 0.17A Automotive 3-Pin SOT-23 T/R

***ark: MOSFET, N-CH, 100V, 0.17A, SOT-23; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:170mA; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2.2V RoHS Compliant: Yes

***ineon: Infineon is one of the few semiconductor manufacturers worldwide to offer depletion MOSFETs. | Summary of Features: Depletion mode; dv/dt rated; Available with V GS(th) indicator on the reel; Halogen free; Pb-free lead plating; RoHS compliant; Qualified according to AEC Q101 | Target Applications: Automotive; Consumer; DC-DC; eMobility; Onboard charger; Telecom

***trelec: Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) mA = 170 / Drain-Source Voltage (Vds) V = 100 / ON Resistance (Rds(on)) Ohm = 6 / Gate-Source Voltage V = 20 / Fall Time ns = 27 / Rise Time ns = 2.7 / Turn-OFF Delay Time ns = 11 / Turn-ON Delay Time ns = 2.9 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SOT-23 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Automotive Qualification Standard = AEC-Q101 / Reflow Temperature Max. °C = 260 / Power Dissipation (Pd) mW = 360

***eco: Transistor MOSFET Negative Channel 100 Volt 0.17A 3-Pin SOT-23

***emi: N-Channel MOSFET, Logic Level Enhancement Mode, 100V, 170 mA, 6Ω

***r Electronics: Small Signal Field-Effect Transistor, 0.17A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236

***rchild Semiconductor: This N-Channel enhancement mode field effect transistors is produced using Fairchild’s proprietary, high cell density, DMOS technology. This product has been designed to minimize on-state resistance while providing rugged, reliable, and fast switching performance.The BSS123 is particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications.

***trelec: Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) mA = 170 / Drain-Source Voltage (Vds) V = 100 / ON Resistance (Rds(on)) Ohm = 10 / Gate-Source Voltage V = 20 / Fall Time ns = 5 / Rise Time ns = 18 / Turn-OFF Delay Time ns = 31 / Turn-ON Delay Time ns = 3.4 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SOT-23 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 300 / Power Dissipation (Pd) mW = 360

***ment14 APAC: MOSFET, N, SOT-23; Transistor Polarity:N Channel; Continuous Drain Current Id:170mA; Drain Source Voltage Vds:100V; On Resistance Rds(on):6ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.7V; Power Dissipation Pd:360mW; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOT-23; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:170mA; Current Temperature:25°C; Device Marking:BSS123; External Depth:2.5mm; External Length / Height:1.12mm; External Width:3.05mm; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:SOT-23; Power Dissipation Pd:360mW; Power Dissipation Pd:360mW; Pulse Current Idm:680mA; SMD Marking:SA; Tape Width:8mm; Termination Type:SMD; Voltage Vds Typ:100V; Voltage Vgs Max:1.7V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2V

Market price

부분 #	제조	설명	재고	가격
PMV213SN,215 DISTI # C1S537100162032	Nexperia	Trans MOSFET N-CH 100V 1.9A 3-Pin TO-236AB T/R RoHS: Compliant	1	10:$0.4020
PMV213SN,215 DISTI # 1727-6294-1-ND	Nexperia	MOSFET N-CH 100V 1.9A SOT23 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	26845In Stock	1000:$0.2686 500:$0.3383 100:$0.4498 10:$0.5890 1:$0.6900
PMV213SN,215 DISTI # 1727-6294-6-ND	Nexperia	MOSFET N-CH 100V 1.9A SOT23 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	26845In Stock	1000:$0.2686 500:$0.3383 100:$0.4498 10:$0.5890 1:$0.6900
PMV213SN,215 DISTI # 1727-6294-2-ND	Nexperia	MOSFET N-CH 100V 1.9A SOT23 RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	24000In Stock	3000:$0.2405
PMV213SN,215 DISTI # PMV213SN,215	Nexperia	Trans MOSFET N-CH 100V 1.9A 3-Pin TO-236AB T/R (Alt: PMV213SN,215) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel	Europe - 162000	3000:€0.1379 6000:€0.1069 12000:€0.0879 18000:€0.0739 30000:€0.0689
PMV213SN,215 DISTI # PMV213SN,215	Nexperia	Trans MOSFET N-CH 100V 1.9A 3-Pin TO-236AB T/R - Tape and Reel (Alt: PMV213SN,215) RoHS: Compliant Min Qty: 3000 Container: Reel	Americas - 12000	3000:$0.1729 6000:$0.1669 12000:$0.1609 18000:$0.1569 30000:$0.1509
PMV213SN,215 DISTI # PMV213SN,215	Nexperia	Trans MOSFET N-CH 100V 1.9A 3-Pin TO-236AB T/R (Alt: PMV213SN,215) RoHS: Compliant Min Qty: 12000 Container: Tape and Reel	Asia - 0	12000:$0.1608 24000:$0.1563 36000:$0.1521 60000:$0.1481 120000:$0.1462 300000:$0.1443 600000:$0.1407
PMV213SN,215 DISTI # 771-PMV213SN215	Nexperia	MOSFET TAPE13 PWR-MOS RoHS: Compliant	92204	1:$0.5400 10:$0.4450 100:$0.2710 1000:$0.2100 3000:$0.1790 9000:$0.1670 24000:$0.1580 45000:$0.1540
PMV213SN T/R DISTI # 771-PMV213SNT/R	NXP Semiconductors	MOSFET TAPE13 PWR-MOS RoHS: Compliant	0
PMV213SN,215	Nexperia	PMV213SN Series 100 V 250 mOhm 2 W N-Channel TrenchMOS Standard Level FET SOT-23 RoHS: Compliant	27000Reel	3000:$0.1980
PMV213SN,215 DISTI # 7258326	Nexperia	MOSFET N-CHANNEL 100V 1.9A TO236AB, PK	1700	20:£0.3570 40:£0.2680 100:£0.2030 200:£0.1930 400:£0.1880
PMV213SN,215 DISTI # 7258326P	Nexperia	MOSFET N-CHANNEL 100V 1.9A TO236AB, RL	2100	40:£0.2680 100:£0.2030 200:£0.1930 400:£0.1880
PMV213SN.215 DISTI # PMV213SN	Nexperia	Transistor: N-MOSFET,unipolar,100V,1.9A,2W,SOT23	6025	5:$0.1758 25:$0.1554 100:$0.1304 500:$0.1134 3000:$0.1048
PMV213SN,215 DISTI # 1081480	Nexperia	MOSFET, N CH, 100V, 1.9A, SOT-23 RoHS: Compliant	2837	5:$0.5410 25:$0.4500 100:$0.2900 1000:$0.2320 3000:$0.1980 5000:$0.1690 20000:$0.1590 50000:$0.1470
PMV213SN,215 DISTI # XSKDRABV0025980	NXE	RoHS: Compliant	62640	6000:$0.1582 62640:$0.1450
PMV213SN,215 DISTI # XSFP00000089939	Nexperia	RoHS: Compliant	57069	3000:$0.3960 57069:$0.3600
PMV213SN,215 DISTI # XSFP00000161481	Nexperia	SmallSignalField-EffectTransistor,3.5AI(D),20V,1-Element,P-Channel,Silicon,Metal-oxideSemiconductorFET,TO-236AB RoHS: Compliant	57069	3000:$0.3960 57069:$0.3600

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PMV213SN,215

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes