We guarantee 100% customer satisfaction.
Quality GuaranteesWe provide 90-360 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.
we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.
Email: [email protected]
| 부분 # | 제조 | 설명 | 재고 | 가격 |
|---|---|---|---|---|
| EPC2012C DISTI # 917-1084-1-ND | Efficient Power Conversion | GANFET TRANS 200V 5A BUMPED DIE Min Qty: 1 Container: Cut Tape (CT) | 11247In Stock |
|
| EPC2012C DISTI # 917-1084-6-ND | Efficient Power Conversion | GANFET TRANS 200V 5A BUMPED DIE Min Qty: 1 Container: Digi-Reel® | 11247In Stock |
|
| EPC2012C DISTI # 917-1084-2-ND | Efficient Power Conversion | GANFET TRANS 200V 5A BUMPED DIE Min Qty: 2500 Container: Tape & Reel (TR) | 10000In Stock |
|
| EPC9004C DISTI # 917-1092-ND | Efficient Power Conversion | BOARD DEV FOR EPC2012C 200V EGAN Min Qty: 1 Container: Bulk | 9In Stock |
|
| EPC9052 DISTI # 917-1115-ND | Efficient Power Conversion | BOARD DEV EPC2012C EGAN FET Min Qty: 1 Container: Box | 6In Stock |
|
| EPC2012 DISTI # 917-1017-2-ND | Efficient Power Conversion | GANFET TRANS 200V 3A BUMPED DIE Min Qty: 1000 Container: Tape & Reel (TR) | Limited Supply - Call | |
| EPC2012 DISTI # 917-1017-1-ND | Efficient Power Conversion | GANFET TRANS 200V 3A BUMPED DIE Min Qty: 1 Container: Cut Tape (CT) | Limited Supply - Call | |
| EPC2012 DISTI # 917-1017-6-ND | Efficient Power Conversion | GANFET TRANS 200V 3A BUMPED DIE Min Qty: 1 Container: Digi-Reel® | Limited Supply - Call | |
| EPC9004 DISTI # 917-1013-ND | Efficient Power Conversion | BOARD DEV FOR EPC2012 200V EGAN Min Qty: 40 Container: Bulk | Temporarily Out of Stock |
|
| EPC2012 | Efficient Power Conversion | 2249 | ||
| EPC2012 | Efficient Power Conversion | POWER FIELD-EFFECT TRANSISTOR, 3A I(D), 200V, 0.1OHM, 1-ELEMENT, N-CHANNEL, GALLIUM NITRIDE, METAL-OXIDE SEMICONDUCTOR FET | 155 |
|
| 영상 | 부분 # | 설명 |
|---|---|---|
|
Mfr.#: EPCJ-112-02 OMO.#: OMO-EPCJ-112-02-1190 |
신규 및 오리지널 |