FDD7N60NZTM

FDD7N60NZTM
Mfr. #:
FDD7N60NZTM
제조사:
ON Semiconductor / Fairchild
설명:
MOSFET N-Channel 600V 5.5A
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
FDD7N60NZTM 데이터 시트
배달:
DHL FedEx Ups TNT EMS
지불:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
제품 속성
속성 값
제조사:
온세미컨덕터
제품 카테고리:
MOSFET
RoHS:
Y
기술:
장착 스타일:
SMD/SMT
패키지/케이스:
TO-252-3
채널 수:
1 Channel
트랜지스터 극성:
N-채널
Vds - 드레인 소스 항복 전압:
600 V
Id - 연속 드레인 전류:
5.5 A
Rds On - 드레인 소스 저항:
1.05 Ohms
최소 작동 온도:
- 55 C
최대 작동 온도:
+ 150 C
Pd - 전력 손실:
90 W
구성:
하나의
포장:
키:
2.39 mm
길이:
6.73 mm
시리즈:
FDD7N60NZ
트랜지스터 유형:
1 N-Channel
너비:
6.22 mm
상표:
온세미컨덕터 / 페어차일드
상품 유형:
MOSFET
공장 팩 수량:
2500
하위 카테고리:
MOSFET
단위 무게:
0.009184 oz
Tags
FDD7N, FDD7, FDD
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***emi
N-Channel Power MOSFET, UniFETTM II, 600 V, 5.5 A, 1.25 Ω, DPAK
***r Electronics
Power Field-Effect Transistor, 5.5A I(D), 600V, 1.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
***nell
MOSFET, N-CH, 600V, 5.5A, TO-251AA; Transistor Polarity: N Channel; Continuous Drain Current Id: 5.5A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 1.05oh; Available until stocks are exhausted Alternative available
***rchild Semiconductor
UniFETTM II MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the smallest on-state resistance among the planar MOSFET, and also provides superior switching performance and higher avalanche energy strength. In addition, internal gate-source ESD diode allows UniFET II MOSFET to withstand over 2kV HBM surge stress. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
부분 # 제조 설명 재고 가격
FDD7N60NZTM
DISTI # V79:2366_17783585
ON SemiconductorTrans MOSFET N-CH 600V 5.5A 3-Pin(2+Tab) DPAK T/R27500
  • 2500:$0.4305
  • 1000:$0.4335
  • 500:$0.5689
  • 100:$0.6304
  • 10:$0.9149
  • 1:$1.0624
FDD7N60NZTM
DISTI # V72:2272_06337724
ON SemiconductorTrans MOSFET N-CH 600V 5.5A 3-Pin(2+Tab) DPAK T/R1080
  • 1000:$0.4273
  • 500:$0.5672
  • 250:$0.6237
  • 100:$0.6308
  • 25:$0.7582
  • 10:$0.9266
  • 1:$1.0782
FDD7N60NZTM
DISTI # V36:1790_06337724
ON SemiconductorTrans MOSFET N-CH 600V 5.5A 3-Pin(2+Tab) DPAK T/R0
  • 2500000:$0.3535
  • 1250000:$0.3538
  • 250000:$0.3834
  • 25000:$0.4371
  • 2500:$0.4461
FDD7N60NZTM
DISTI # FDD7N60NZTMCT-ND
ON SemiconductorMOSFET N-CH 600V 5.5A DPAK-3
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
1913In Stock
  • 1000:$0.4924
  • 500:$0.6237
  • 100:$0.7550
  • 10:$0.9680
  • 1:$1.0800
FDD7N60NZTM
DISTI # FDD7N60NZTMDKR-ND
ON SemiconductorMOSFET N-CH 600V 5.5A DPAK-3
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
1913In Stock
  • 1000:$0.4924
  • 500:$0.6237
  • 100:$0.7550
  • 10:$0.9680
  • 1:$1.0800
FDD7N60NZTM
DISTI # FDD7N60NZTMTR-ND
ON SemiconductorMOSFET N-CH 600V 5.5A DPAK-3
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)
Temporarily Out of Stock
  • 12500:$0.4079
  • 5000:$0.4238
  • 2500:$0.4461
FDD7N60NZTM
DISTI # 26114050
ON SemiconductorTrans MOSFET N-CH 600V 5.5A 3-Pin(2+Tab) DPAK T/R27500
  • 31:$1.0624
FDD7N60NZTM
DISTI # 26637087
ON SemiconductorTrans MOSFET N-CH 600V 5.5A 3-Pin(2+Tab) DPAK T/R7500
  • 2500:$0.4461
FDD7N60NZTM
DISTI # 26703053
ON SemiconductorTrans MOSFET N-CH 600V 5.5A 3-Pin(2+Tab) DPAK T/R1080
  • 17:$1.0782
FDD7N60NZTM
DISTI # FDD7N60NZTM
ON SemiconductorTrans MOSFET N-CH 600V 5.5A 3-Pin DPAK T/R - Bulk (Alt: FDD7N60NZTM)
RoHS: Not Compliant
Min Qty: 596
Container: Bulk
Americas - 0
  • 5960:$0.5179
  • 2980:$0.5309
  • 1788:$0.5379
  • 1192:$0.5449
  • 596:$0.5489
FDD7N60NZTM
DISTI # FDD7N60NZTM
ON SemiconductorTrans MOSFET N-CH 600V 5.5A 3-Pin DPAK T/R (Alt: FDD7N60NZTM)
RoHS: Compliant
Min Qty: 2500
Container: Tape and Reel
Europe - 0
  • 25000:€0.3769
  • 15000:€0.4059
  • 10000:€0.4389
  • 5000:€0.4789
  • 2500:€0.5859
FDD7N60NZTM
DISTI # FDD7N60NZTM
ON SemiconductorTrans MOSFET N-CH 600V 5.5A 3-Pin DPAK T/R - Tape and Reel (Alt: FDD7N60NZTM)
RoHS: Compliant
Min Qty: 2500
Container: Reel
Americas - 0
  • 25000:$0.3739
  • 15000:$0.3839
  • 10000:$0.3889
  • 5000:$0.3939
  • 2500:$0.3959
FDD7N60NZTM
DISTI # 54T8322
ON SemiconductorUF2 600V 1.25OHM DPAK / REEL0
  • 25000:$0.4940
  • 10000:$0.5090
  • 2500:$0.5280
  • 1:$0.5320
FDD7N60NZTM
DISTI # 46AC8815
ON SemiconductorMOSFET, N-CH, 600V, 5.5A, TO-251AA,Transistor Polarity:N Channel,Continuous Drain Current Id:5.5A,Drain Source Voltage Vds:600V,On Resistance Rds(on):1.05ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:5V,Power RoHS Compliant: Yes2410
  • 1000:$0.6870
  • 500:$0.8450
  • 250:$0.8950
  • 100:$0.9440
  • 50:$1.0300
  • 25:$1.1200
  • 10:$1.2000
  • 1:$1.3900
FDD7N60NZTM
DISTI # 512-FDD7N60NZTM
ON SemiconductorMOSFET N-Channel 600V 5.5A
RoHS: Compliant
1383
  • 1:$0.9900
  • 10:$0.8490
  • 100:$0.6520
  • 500:$0.5760
  • 1000:$0.4550
  • 2500:$0.4340
FDD7N60NZTMFairchild Semiconductor CorporationPower Field-Effect Transistor, 5.5A I(D), 600V, 1.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
RoHS: Compliant
65753
  • 1000:$0.4500
  • 500:$0.4700
  • 100:$0.4900
  • 25:$0.5100
  • 1:$0.5500
FDD7N60NZTMFairchild Semiconductor CorporationPower Field-Effect Transistor, 5.5A I(D), 600V, 1.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
RoHS: Compliant
2500
    FDD7N60NZTM
    DISTI # 2829468
    ON SemiconductorMOSFET, N-CH, 600V, 5.5A, TO-251AA
    RoHS: Compliant
    2410
    • 500:$0.8720
    • 250:$1.0700
    • 100:$1.3000
    • 25:$1.9000
    • 5:$2.2200
    FDD7N60NZTM
    DISTI # 2829468
    ON SemiconductorMOSFET, N-CH, 600V, 5.5A, TO-251AA2410
    • 500:£0.4390
    • 250:£0.4680
    • 100:£0.4970
    • 10:£0.7020
    • 1:£0.8630
    영상 부분 # 설명
    BTA212X-800B,127

    Mfr.#: BTA212X-800B,127

    OMO.#: OMO-BTA212X-800B-127

    Triacs RAIL TRIAC
    BC857BDW1T1G

    Mfr.#: BC857BDW1T1G

    OMO.#: OMO-BC857BDW1T1G

    Bipolar Transistors - BJT 100mA 50V Dual PNP
    STD2HNK60Z

    Mfr.#: STD2HNK60Z

    OMO.#: OMO-STD2HNK60Z

    MOSFET N Ch 600V Zener SuprMESH 4.4 A
    STD7N60M2

    Mfr.#: STD7N60M2

    OMO.#: OMO-STD7N60M2

    MOSFET N-CH 600V 0.86Ohm 5A MDmesh M2
    ECW-FE2W104K

    Mfr.#: ECW-FE2W104K

    OMO.#: OMO-ECW-FE2W104K

    Film Capacitors 0.1uF 450VDC 10% MPP L/S=10mm
    860010675016

    Mfr.#: 860010675016

    OMO.#: OMO-860010675016

    Aluminum Electrolytic Capacitors - Radial Leaded WCAP-ATG8 50V 150uF 20% ESR=585mOhms
    STD2HNK60Z

    Mfr.#: STD2HNK60Z

    OMO.#: OMO-STD2HNK60Z-STMICROELECTRONICS

    MOSFET N-CH 600V 2A DPAK
    STD7N60M2

    Mfr.#: STD7N60M2

    OMO.#: OMO-STD7N60M2-STMICROELECTRONICS

    MOSFET N-CH 600V DPAK
    SRR1280-102K

    Mfr.#: SRR1280-102K

    OMO.#: OMO-SRR1280-102K-BOURNS

    Fixed Inductors 1000uH 10% SMD 1280
    BTA212X-800B,127

    Mfr.#: BTA212X-800B,127

    OMO.#: OMO-BTA212X-800B-127-WEEN-SEMICONDUCTORS

    Triacs RAIL TRIAC
    유효성
    재고:
    Available
    주문 시:
    1984
    수량 입력:
    FDD7N60NZTM의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
    참고 가격(USD)
    수량
    단가
    내선 가격
    1
    US$0.99
    US$0.99
    10
    US$0.85
    US$8.49
    100
    US$0.65
    US$65.20
    500
    US$0.58
    US$288.00
    1000
    US$0.46
    US$455.00
    2021년부터 반도체 공급 부족으로 인해 아래 가격은 2021년 이전 정상 가격입니다. 확인을 위해 문의를 보내주세요.
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