IPA60R160P6XKSA1

Mfr. #:: IPA60R160P6XKSA1
제조사:: Infineon Technologies
설명:: MOSFET N-Ch 600V 10.4A TO220FP-3
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: IPA60R160P6XKSA1 데이터 시트
배달:: DHL FedEx Ups TNT EMS
지불:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:
추가 정보:: IPA60R160P6XKSA1 추가 정보

제품 속성
속성 값

제조사:: 인피니언

제품 카테고리:: MOSFET

RoHS:: Y

기술:: 시

장착 스타일:: 구멍을 통해

패키지/케이스:: TO-220FP-3

채널 수:: 1 Channel

트랜지스터 극성:: N-채널

Vds - 드레인 소스 항복 전압:: 600 V

Id - 연속 드레인 전류:: 23.8 A

Rds On - 드레인 소스 저항:: 144 mOhms

Vgs th - 게이트 소스 임계 전압:: 3.5 V

Vgs - 게이트 소스 전압:: 20 V

Qg - 게이트 차지:: 44 nC

최소 작동 온도:: - 55 C

최대 작동 온도:: + 150 C

Pd - 전력 손실:: 34 W

구성:: 하나의

채널 모드:: 상승

상표명:: 쿨모스

포장:: 튜브

키:: 16.15 mm

길이:: 10.65 mm

시리즈:: CoolMOS P6

트랜지스터 유형:: 1 N-Channel

너비:: 4.85 mm

상표:: 인피니언 테크놀로지스

가을 시간:: 5.8 ns

상품 유형:: MOSFET

상승 시간:: 7.6 ns

공장 팩 수량:: 500

하위 카테고리:: MOSFET

일반적인 끄기 지연 시간:: 40 ns

일반적인 켜기 지연 시간:: 12.5 ns

부품 번호 별칭:: IPA60R160P6 SP001017082

단위 무게:: 0.211644 oz

Tags: IPA60R160P6, IPA60R160P, IPA60R160, IPA60R16, IPA60R1, IPA60R, IPA60, IPA6, IPA

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IPA60R160P6XKSA1 설명

***ure Electronics: Single N-Channel 600 V 160 mOhm 44 nC CoolMOS Power Mosfet - TO-220-3FP

***et: CoolMOS P6 Power Transistor N-Channel 600V 68A 3-Pin TO-220FP

***ow.cn: Trans MOSFET N-CH 600V 23.8A 3-Pin(3+Tab) TO-220FP Tube

***et Japan: Trans MOSFET N-CH 600(Min)V 10.4A 3-Pin TO-220 FP Tube

***ark: MOSFET, N-CH, 600V, 23.8A, TO-220FP; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:23.8A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; MSL:- RoHS Compliant: Yes

***ineon SCT: Infineons CoolMOS™ P6 superjunction MOSFET family is designed to enable higher system efficiency whilst being easy to design in, PG-TO220-3, RoHS

***ineon: Infineons CoolMOS P6 product family is designed to enable higher system efficiency whilst being easy to design in. CoolMOS P6 closes the gap between technologies which focus on delivering ultimate performance and those which concentrate more on ease-of-use. | Summary of Features: Reduced gate charge (Q g); Higher V th; Good body diode ruggedness; Optimized integrated R g; Improved dv/dt from 50V/ns; CoolMOS quality with over 12 years manufacturing experience in superjunction technology | Benefits: Improved effciency especially in light load condition; Better efficiency in soft switching applications due to earlier turn-off; Suitable for hard- & soft-switching topologies; Optimized balance of efficiency and ease of use and good controllability of switching behavior; High robustness and better efficiency; Outstanding quality & reliability | Target Applications: PFC stages for server, telecom rectifier, PC silverbox, gaming consoles; PWM stages (TTF, LLC) for server, telecom rectifier, PC silverbox, gaming consoles

***enic: 600V 23A 227W 158m´Î@10V12A 4V@250Ã×A N Channel TO-220(TO-220-3) MOSFETs ROHS

***et: Trans MOSFET N-CH 600V 23A 3-Pin TO-220AB

***el Electronic: MOSFET 600V 158mOhm@10V 23A N-Ch E-SRS

***et Europe: Trans MOSFET N-CH 500V 26A 3-Pin TO-220

***el Electronic: MOSFET N-CH 500V 26A TO-220FP

*** Europe: N-CH SINGLE 500V TO220FP

***ark: N-Channel 500V

***icroelectronics: N-channel 600 V, 0.108 Ohm typ., 26 A MDmesh M2 Power MOSFETs in TO-220FP package

***ure Electronics: N-Channel 600 V 0.125 Ohm 45.5 nC MDmesh II Plus Power Mosfet - TO-220FP

***p One Stop: Trans MOSFET N-CH 650V 26A 3-Pin(3+Tab) TO-220FP Tube

***(Formerly Allied Electronics): MOSFET N-Ch 600V 26A MDmeshIIPlusTO220FP

***ark: MOSFET, N-CH, 600V, 26A, TO-220FP; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:26A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes

***r Electronics: Power Field-Effect Transistor, 26A I(D), 600V, 0.125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***icroelectronics: N-channel 600 V, 0.108 Ohm typ., 26 A MDmesh M2 Power MOSFETs in TO-220 package

***ure Electronics: Single N-Channel 650 V 0.125 O 190 W Flange Mount Power Mosfet - TO-220-3

***ical: Trans MOSFET N-CH 650V 26A 3-Pin(3+Tab) TO-220AB Tube

***ark: MOSFET, N-CH, 600V, 26A, TO-220AB; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:26A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes

***ure Electronics: SIHP25N50E Series 500 V 26 A 145 mOhm Flange Mount Power Mosfet - TO-220AB

***ical: Trans MOSFET N-CH 500V 26A 3-Pin(3+Tab) TO-220AB

***ark: Mosfet, N-Ch, 500V, 26A, To-220Ab Rohs Compliant: Yes

***id Electronics: VISHAY SEMICONDUCTOR SIHP25N50E-GE3

***ure Electronics: Single N-Channel 650 V 0.19 Ohm 87 nC CoolMOS Power Mosfet - TO-220-3FP

*** Electronics: INFINEON SPA20N60C3 TransMOSFET N-CH 600V 20.7A 3-Pin(3+Tab) TO-220FP RoHS

***ponent Stockers USA: 20.7 A 600 V 0.19 ohm N-CHANNEL Si POWER MOSFET TO-220AB

***roFlash: Power Field-Effect Transistor, 20.7A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***ineon: Replacement for 600V CoolMOS C3 is 600V CoolMOS C6/E6 >> Click & go to 600V CoolMOS C6/E6 | Summary of Features: Low specific on-state resistance; (R on*A); Very low energy storage in output capacitance (E oss) @400V; Low gate charge (Q g); Fieldproven CoolMOS quality; CoolMOS technology has been manufactured by Infineon since 1998 | Benefits: High efficiency and power density; Outstanding cost/performance; High reliability; Ease-of-use | Target Applications: Server; Telecom; Consumer; PC power; Adapter

***trelec: Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 20.7 / Drain-Source Voltage (Vds) V = 600 / ON Resistance (Rds(on)) mOhm = 190 / Gate-Source Voltage V = 20 / Fall Time ns = 4.5 / Rise Time ns = 5 / Turn-OFF Delay Time ns = 67 / Turn-ON Delay Time ns = 10 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = TO-220FP / Pins = 3 / Mounting Type = Through Hole / Packaging = Tube / Reflow Temperature Max. °C = 260 / Power Dissipation (Pd) W = 34.5

***ment14 APAC: MOSFET, N, COOLMOS, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:20.7A; Drain Source Voltage Vds:650V; On Resistance Rds(on):190mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:34.5W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Avalanche Single Pulse Energy Eas:690mJ; Current Iar:20A; Current Id Max:20.7A; Current Idss Max:1mA; Current Temperature:25°C; Full Power Rating Temperature:25°C; Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-55°C; No. of Transistors:1; On State Resistance Max:190mohm; Package / Case:TO-220AB; Power Dissipation Pd:34.5W; Power Dissipation Pd:34.5W; Pulse Current Idm:62.1A; Rate of Voltage Change dv / dt:50V/µs; Repetitive Avalanche Energy Max:1mJ; Termination Type:Through Hole; Voltage Vds Typ:650V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:3.9V; Voltage Vgs th Min:2.1V

IPA60R160P6XKSA1 추가 정보

CoolMOS™ Power Transistors: Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.

Market price

부분 #	제조	설명	재고	가격
IPA60R160P6XKSA1 DISTI # V99:2348_06377311	Infineon Technologies AG	Trans MOSFET N-CH 600V 23.8A 3-Pin(3+Tab) TO-220FP Tube RoHS: Compliant	500	500:$1.8840 250:$2.1150 100:$2.2780 10:$2.6730 1:$3.4375
IPA60R160P6XKSA1 DISTI # IPA60R160P6XKSA1-ND	Infineon Technologies AG	MOSFET N-CH 600V TO220FP-3 RoHS: Compliant Min Qty: 1 Container: Tube	On Order	5000:$1.6188 2500:$1.6820 500:$2.0994 100:$2.4661 25:$2.8456 10:$3.0100 1:$3.3500
IPA60R160P6XKSA1 DISTI # 30214919	Infineon Technologies AG	Trans MOSFET N-CH 600V 23.8A 3-Pin(3+Tab) TO-220FP Tube RoHS: Compliant	1001	500:$1.8810 250:$2.0988 100:$2.2176 10:$2.5542
IPA60R160P6XKSA1 DISTI # 31584662	Infineon Technologies AG	Trans MOSFET N-CH 600V 23.8A 3-Pin(3+Tab) TO-220FP Tube RoHS: Compliant	500	500:$1.8840 250:$2.1150 100:$2.2780 10:$2.6730 4:$3.1250
IPA60R160P6XKSA1 DISTI # SP001017082	Infineon Technologies AG	Trans MOSFET N-CH 600(Min)V 10.4A 3-Pin TO-220 FP Tube (Alt: SP001017082) RoHS: Compliant Min Qty: 1 Container: Tube	Europe - 1000	1000:€1.2900 100:€1.3900 500:€1.3900 25:€1.4900 50:€1.4900 10:€1.6900 1:€1.8900
IPA60R160P6XKSA1 DISTI # IPA60R160P6XKSA1	Infineon Technologies AG	Trans MOSFET N-CH 600(Min)V 10.4A 3-Pin TO-220 FP Tube - Rail/Tube (Alt: IPA60R160P6XKSA1) RoHS: Compliant Min Qty: 500 Container: Tube	Americas - 0	3000:$1.3900 5000:$1.3900 1000:$1.4900 2000:$1.4900 500:$1.5900
IPA60R160P6XKSA1 DISTI # IPA60R160P6	Infineon Technologies AG	Trans MOSFET N-CH 600(Min)V 10.4A 3-Pin TO-220 FP Tube (Alt: IPA60R160P6) RoHS: Compliant Min Qty: 500 Container: Tube	Asia - 0	25000:$1.6662 12500:$1.6907 5000:$1.7160 2500:$1.7420 1500:$1.7964 1000:$1.8543 500:$1.9162
IPA60R160P6XKSA1 DISTI # 12AC9691	Infineon Technologies AG	MOSFET, N-CH, 600V, 23.8A, TO-220FP,Transistor Polarity:N Channel,Continuous Drain Current Id:23.8A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.144ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V,MSL:- RoHS Compliant: Yes	100	500:$2.1500 250:$2.3600 100:$2.5900 50:$2.7500 25:$2.9300 10:$3.1000 1:$3.4400
IPA60R160P6 DISTI # 726-IPA60R160P6	Infineon Technologies AG	MOSFET N-Ch 600V 10.4A TO220FP-3 RoHS: Compliant	1990	1:$3.0400 10:$2.5800 100:$2.2400 250:$2.1200 500:$1.9000
IPA60R160P6XKSA1 DISTI # 726-IPA60R160P6XKSA1	Infineon Technologies AG	MOSFET N-Ch 600V 10.4A TO220FP-3 RoHS: Compliant	1500	1:$3.0400 10:$2.5800 100:$2.2400 250:$2.1200 500:$1.9000
IPA60R160P6XKSA1 DISTI # IPA60R160P6XKSA1	Infineon Technologies AG	Transistor: N-MOSFET,unipolar,600V,28A,34W,TO220FP	144	1:$3.3700 3:$2.9000 10:$2.3400 100:$2.0300
IPA60R160P6XKSA1 DISTI # 2709946	Infineon Technologies AG	MOSFET, N-CH, 600V, 23.8A, TO-220FP RoHS: Compliant	933	100:$3.9300 10:$4.8000 1:$5.3700
IPA60R160P6XKSA1 DISTI # 2709946	Infineon Technologies AG	MOSFET, N-CH, 600V, 23.8A, TO-220FP	942	100:£2.1600 10:£2.4900 1:£3.3000
IPA60R160P6XKSA1 DISTI # XSKDRABS0031500	Infineon Technologies AG	SOT-23 (Micro-3) RoHS: Compliant	800 in Stock0 on Order	800:$2.1720 350:$2.3160

영상	부분 #	설명
	Mfr.#: IPA60R160P6 OMO.#: OMO-IPA60R160P6	MOSFET N-Ch 600V 10.4A TO220FP-3
	Mfr.#: IPA60R160P7XKSA1 OMO.#: OMO-IPA60R160P7XKSA1	MOSFET
	Mfr.#: IPA60R160C6XKSA1 OMO.#: OMO-IPA60R160C6XKSA1	MOSFET HIGH POWER_LEGACY
	Mfr.#: IPA60R160P6 OMO.#: OMO-IPA60R160P6-1190	MOSFET N-Ch 600V 10.4A TO220FP-3
	Mfr.#: IPA60R160C6 6R160C6 OMO.#: OMO-IPA60R160C6-6R160C6-1190	신규 및 오리지널
	Mfr.#: IPA60R160C6XKSA1 OMO.#: OMO-IPA60R160C6XKSA1-INFINEON-TECHNOLOGIES	MOSFET N-CH 600V 23.8A TO220-FP
	Mfr.#: IPA60R160P6(6R160P6) OMO.#: OMO-IPA60R160P6-6R160P6--1190	신규 및 오리지널
	Mfr.#: IPA60R165CP 6R165P OMO.#: OMO-IPA60R165CP-6R165P-1190	신규 및 오리지널
	Mfr.#: IPA60R165CP , 2SD1802T OMO.#: OMO-IPA60R165CP-2SD1802T-1190	신규 및 오리지널
	Mfr.#: IPA60R165CP TK20A60 OMO.#: OMO-IPA60R165CP-TK20A60-1190	신규 및 오리지널

IPA60R160P6XKSA1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes