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BSO330N02K G

BSO330N02K G
Mfr. #:
BSO330N02K G
제조사:
설명:
IGBT Transistors MOSFET N-Ch 20V 5.4A DSO-8 OptiMOS 2
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
BSO330N02K G 데이터 시트
배달:
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ECAD Model:
제품 속성
속성 값
제조사
제품 카테고리
FET - 어레이
시리즈
OptiMOS 2
포장
릴
부분 별칭
BSO330N02KGFUMA1 SP000380284
장착 스타일
SMD/SMT
상표명
옵티모스
패키지 케이스
DSO-8
기술
시
채널 수
2 Channel
구성
듀얼 듀얼 드레인
트랜지스터형
2 N-Channel
Pd 전력 손실
2.5 W
최대 작동 온도
+ 150 C
최소 작동 온도
- 55 C
가을철
2.8 ns
상승 시간
16.8 ns
Vgs 게이트 소스 전압
12 V
Id-연속-드레인-전류
5.4 A
Vds-드레인-소스-고장-전압
20 V
Rds-On-Drain-Source-Resistance
30 mOhms
트랜지스터 극성
N-채널
일반 꺼짐 지연 시간
13.4 ns
일반 켜기 지연 시간
7.4 ns
채널 모드
상승
Tags
BSO330N02KG, BSO33, BSO3, BSO
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
Transistor MOSFET Array Dual N-Channel 20V 5.4A 8-Pin DSO
***i-Key
N-CHANNEL POWER MOSFET
***el Nordic
Contact for details
*** International
BSO330N02KG INFINEO
***nell
MOSFET, N CH, 6.5A, 20V, PG-DSO-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 5.4A; Drain Source Voltage Vds: 20V; On Resistance Rds(on): 0.024ohm; Rds(on) Test Voltage Vgs: 4.5V; Threshold Voltage Vgs: 950mV; Power Dissipation Pd: 2.5W; Transistor Case Style: DSO; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018); Current Id Max: 6.5A; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Transistor Type: Power MOSFET; Voltage Vgs Max: 12V
***(Formerly Allied Electronics)
IRF7311PBF Dual N-channel MOSFET Transistor; 6.6 A; 20 V; 8-Pin SOIC
***Yang
Transistor MOSFET Array Dual N-CH 20V 6.6A 8-Pin SOIC T/R - Tape and Reel
***ure Electronics
Dual N-Channel 20 V 0.029 Ohm 18 nC HEXFET® Power Mosfet - SOIC-8
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 6.6A I(D), 20V, 0.029ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
***nell
MOSFET, DUAL, NN, LOGIC, SO-8; Transistor Polarity: Dual N Channel; Continuous Drain Current Id: 6.6A; Drain Source Voltage Vds: 20V; On Resistance Rds(on): 0.029ohm; Rds(on) Test Voltage Vgs: 4.5V; Threshold Voltage Vgs: 700m
***ure Electronics
Dual N & P-Channel 20 V 30 mOhm PowerTrench® Mosfet - SOIC-8
***et Europe
Trans MOSFET N/P-CH 20V 6.5A/5A 8-Pin SOIC N T/R
***Yang
Trans MOSFET N/P-CH 20V 6.5A/5A 8-Pin SOIC N T/R - Product that comes on tape, but is not reeled (Al
***roFlash
Power Field-Effect Transistor, 6.5A I(D), 20V, 0.03ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET
***ment14 APAC
MOSFET, N & P CH 8SOIC; Transistor Polarity:N and P Channel; Continuous Drain Current Id:6.5A; Drain Source Voltage Vds:20V; On Resistance Rds(on):30mohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:1V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:6.5A; Package / Case:SOIC; Power Dissipation Pd:2W; Termination Type:SMD; Voltage Vds Typ:20V; Voltage Vgs Max:1V; Voltage Vgs Rds on Measurement:4.5V
***rchild Semiconductor
These dual N- and P-channel enhancement mode power field effect transistors are produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize on-state ressitance and yet maintain superior switching performance.These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
***emi
Dual N-Channel PowerTrench® MOSFET, 2.5V Specified, 20V, 6.5A, 30mΩ
***ure Electronics
Dual N-Channel 20 V 30 mOhm Surface Mount PowerTrench Mosfet - SOIC-8
***Yang
Transistor MOSFET Array Dual N-CH 20V 6.5A 8-Pin SOIC T/R - Product that comes on tape, but is not r
***el Electronic
ON SEMICONDUCTOR - FDS9926A - Dual MOSFET, Dual N Channel, 6.5 A, 20 V, 0.025 ohm, 4.5 V, 1 V
***ment14 APAC
MOSFET, DUAL, N, SMD, SO-8; Transistor Polarity:N Channel; Continuous Drain Current Id:6.5A; Drain Source Voltage Vds:20V; On Resistance Rds(on):30mohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:1V; Power Dissipation Pd:2W; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:6.5A; Package / Case:SOIC; Power Dissipation Pd:2W; Termination Type:SMD; Voltage Vds Typ:20V; Voltage Vgs Max:1V; Voltage Vgs Rds on Measurement:4.5V
***rchild Semiconductor
These N-Channel 2.5V specified MOSFETs use Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V – 10V).
***ure Electronics
Dual N-Channel 20 V 30 mOhm 13 nC HEXFET® Power Mosfet - SOIC-8
*** Source Electronics
MOSFET 2N-CH 20V 7A 8-SOIC / Trans MOSFET N-CH Si 20V 7A 8-Pin SOIC T/R
***ineon
Benefits: RoHS Compliant; Low RDS(on); Dual N-Channel MOSFET
***ark
Mosfet, Dual N-Ch, 20V, 7A, Soic; Transistor Polarity:dual N Channel; Continuous Drain Current Id:7A; Drain Source Voltage Vds:20V; On Resistance Rds(On):0.03Ohm; Rds(On) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:1.2V; Power Rohs Compliant: Yes
***emi
Small Signal MOSFET 20V 4.2A 45 mOhm Single N-Channel SO-8
***ark
Transistor; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:20V; Continuous Drain Current, Id:4.2A; On Resistance, Rds(on):45mohm; Rds(on) Test Voltage, Vgs:4.5V; Threshold Voltage, Vgs Typ:0.95V ;RoHS Compliant: Yes
***nell
MOSFET, N, 20V, SOIC-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 4.2A; Drain Source Voltage Vds: 20V; On Resistance Rds(on): 0.045ohm; Rds(on) Test Voltage Vgs: 4.5V; Threshold Voltage Vgs: 950mV; Power Dissipation Pd: 770mW; Transistor Case Style: SOIC; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018); Current Id Max: 4.2A; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Termination Type: Surface Mount Device; Voltage Vds Typ: 20V; Voltage Vgs Max: 950mV; Voltage Vgs Rds on Measurement: 4.5V
부분 # 제조 설명 재고 가격
BSO330N02KGFUMA1
DISTI # BSO330N02KGFUMA1TR-ND		Infineon Technologies AGMOSFET 2N-CH 20V 5.4A 8DSO
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)		Limited Supply - Call
    BSO330N02KGFUMA1
    DISTI # BSO330N02KGFUMA1CT-ND    		Infineon Technologies AGMOSFET 2N-CH 20V 5.4A 8DSO
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)    		Limited Supply - Call
      BSO330N02KGFUMA1
      DISTI # BSO330N02KGFUMA1DKR-ND      		Infineon Technologies AGMOSFET 2N-CH 20V 5.4A 8DSO
      RoHS: Compliant
      Min Qty: 1
      Container: Digi-Reel®      		Limited Supply - Call
        BSO330N02K G
        DISTI # 726-BSO330N02KG        		Infineon Technologies AGMOSFET N-Ch 20V 5.4A DSO-8 OptiMOS 2
        RoHS: Compliant        		2299
        • 1:$0.9300
        • 10:$0.7200
        • 100:$0.5510
        • 500:$0.4660
        • 1000:$0.3710
        • 2500:$0.3070
        • 5000:$0.2860
        • 10000:$0.2750
        • 25000:$0.2650
        BSO330N02KGInfineon Technologies AGPower Field-Effect Transistor, 4.2A I(D), 20V, 0.03ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
        RoHS: Compliant        		2746
        • 1000:$0.2500
        • 500:$0.2600
        • 100:$0.2700
        • 25:$0.2900
        • 1:$0.3100
        BSO330N02KGFUMA1Infineon Technologies AGPower Field-Effect Transistor, 4.2A I(D), 20V, 0.03ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
        RoHS: Compliant        		12500
        • 1000:$0.2700
        • 500:$0.2800
        • 100:$0.2900
        • 25:$0.3000
        • 1:$0.3300
        영상 부분 # 설명
        BSO330N02K(330N2K)

        Mfr.#: BSO330N02K(330N2K)

        OMO.#: OMO-BSO330N02K-330N2K--1190

        		 신규 및 오리지널
        BSO330N02KG

        Mfr.#: BSO330N02KG

        OMO.#: OMO-BSO330N02KG-1190

        		 Power Field-Effect Transistor, 4.2A I(D), 20V, 0.03ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
        BSO330N02KGFUMA1

        Mfr.#: BSO330N02KGFUMA1

        OMO.#: OMO-BSO330N02KGFUMA1-INFINEON-TECHNOLOGIES

        		 MOSFET 2N-CH 20V 5.4A 8DSO
        BSO330N02K G

        Mfr.#: BSO330N02K G

        OMO.#: OMO-BSO330N02K-G-126

        		 IGBT Transistors MOSFET N-Ch 20V 5.4A DSO-8 OptiMOS 2
        유효성
        재고:
        Available
        주문 시:
        1000
        수량 입력:
        BSO330N02K G의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
        참고 가격(USD)
        수량
        단가
        내선 가격
        1
        US$0.40
        US$0.40
        10
        US$0.38
        US$3.78
        100
        US$0.36
        US$35.78
        500
        US$0.34
        US$168.95
        1000
        US$0.32
        US$318.00
        시작
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