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IRLR8721PBF

IRLR8721PBF
Mfr. #:
IRLR8721PBF
제조사:
Infineon Technologies
설명:
IGBT Transistors MOSFET 30V 1 N-CH HEXFET 8.4mOhms 8.5nC
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
IRLR8721PBF 데이터 시트
배달:
DHL FedEx Ups TNT EMS
지불:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IRLR8721PBF DatasheetIRLR8721PBF Datasheet (P4-P6)IRLR8721PBF Datasheet (P7-P9)IRLR8721PBF Datasheet (P10-P12)
ECAD Model:
제품 속성
속성 값
제조사
국제 정류기
제품 카테고리
트랜지스터 - FET, MOSFET - 단일
포장
튜브
단위 무게
0.139332 oz
장착 스타일
SMD/SMT
패키지 케이스
TO-252-3
기술
시
채널 수
1 Channel
구성
하나의
트랜지스터형
1 N-Channel
Pd 전력 손실
65 W
Vgs 게이트 소스 전압
20 V
Id-연속-드레인-전류
65 A
Vds-드레인-소스-고장-전압
30 V
Rds-On-Drain-Source-Resistance
11.8 mOhms
트랜지스터 극성
N-채널
Qg-Gate-Charge
8.5 nC
Tags
IRLR8721, IRLR872, IRLR87, IRLR8, IRLR, IRL
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***(Formerly Allied Electronics)
MOSFET, N Ch., 30V, 65A, 8.4 MOHM, 8.5 NC QG, D-PAK, Pb-Free
***ineon SCT
30V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS
***ment14 APAC
MOSFET, N D-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:65A; Drain Source Voltage Vds:30V; On Resistance Rds(on):8.4mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.9V; Power Dissipation Pd:65W; Transistor Case Style:D-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Charge Qrr @ Tj = 25°C Typ:8.5nC; Current Id Max:65A; Package / Case:DPAK; Power Dissipation Pd:65W; Power Dissipation Pd:65W; Pulse Current Idm:260A; Termination Type:SMD; Voltage Vds Typ:30V; Voltage Vgs Max:1.9V; Voltage Vgs Rds on Measurement:10V
***ure Electronics
Single N-Channel 30 V 8.4 mOhm 8.5 nC HEXFET® Power Mosfet - DPAK
***(Formerly Allied Electronics)
MOSFET, 30V, 65A, 8.4 MOHM, 8.5 NC QG, LOGIC LEVEL, D-PAK
***ineon SCT
30V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS
***ark
Transistor Polarity:n Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:65A; On Resistance Rds(On):0.0063Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.9V Rohs Compliant: Yes
***(Formerly Allied Electronics)
MOSFET; Power; N-Ch; VDSS 30V; RDS(ON) 7.5Milliohms; ID 65A; D-Pak (TO-252AA); PD 75W
***ure Electronics
Single N-Channel 30V 10 mOhm 10 nC HEXFET® Power Mosfet - TO-252AA
***ineon SCT
30V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS
***ment14 APAC
N CHANNEL MOSFET, 30V, 65A, D-PAK; Trans; Transistor Polarity:N Channel; Continuous Drain Current Id:65A;
*** Stop Electro
Power Field-Effect Transistor, 65A I(D), 30V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
***ineon
Benefits: RoHS Compliant; Industry-leading quality; Low RDS(ON) at 4.5V VGS; Fully Characterized Avalanche Voltage and Current; Ultra-Low Gate Impedance; Logic Level
***ark
Mosfet Transistor; Transistor Polarity:n Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:65A; On Resistance Rds(On):0.0075Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; No. Of Pins:3Pins Rohs Compliant: Yes
***ark
Transistor,mosfet,n-Channel,30V V(Br)Dss,15A I(D),to-252Aa Rohs Compliant: Yes
***emi
PowerTrench® MOSFET, N-Channel, 30V, 73A, 8.2mΩ
***r Electronics
Power Field-Effect Transistor, 15A I(D), 30V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
***rchild Semiconductor
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(ON) and fast switching speed.
***Yang
N-Channel 30V 75A (Ta) 71W (Tc) Surface Mount D-PAK (TO-252AA) - Bulk
***i-Key
MOSFET N-CH 30V 75A D-PAK
***ser
MOSFETs 30V N-Ch PowerTrench
***S
French Electronic Distributor since 1988
***el Nordic
Contact for details
***Yang
POWER MOSFET 25V 70A SINGLE N-CHANNEL - Tape and Reel
***or
MOSFET N-CH 25V 11.2A/73A DPAK
***ark
Transistor; Transistor Polarity:N Channel; Continuous Drain Current, Id:13.6A; Drain Source Voltage, Vds:25V; On Resistance, Rds(on):6.2mohm; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:2.5V; Power Dissipation, Pd:2W ;RoHS Compliant: Yes
부분 # 제조 설명 재고 가격
IRLR8721PBF
DISTI # IRLR8721PBF-ND		Infineon Technologies AGMOSFET N-CH 30V 65A DPAK
RoHS: Compliant
Min Qty: 900
Container: Tube		Limited Supply - Call
    IRLR8721PBF
    DISTI # 70018007    		Infineon Technologies AGMOSFET,N Ch.,30V,65A,8.4 MOHM,8.5 NC QG,D-PAK,Pb-Free
    RoHS: Compliant    		0
    • 900:$1.1600
    • 1800:$1.1370
    • 4500:$1.1020
    • 9000:$1.0560
    • 22500:$0.9860
    IRLR8721PBFInfineon Technologies AGPower Field-Effect Transistor, 65A I(D), 30V, 0.0084ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
    RoHS: Compliant    		19
    • 1000:$0.3400
    • 500:$0.3600
    • 100:$0.3800
    • 25:$0.3900
    • 1:$0.4200
    IRLR8721PBF
    DISTI # 942-IRLR8721PBF    		Infineon Technologies AGMOSFET 30V 1 N-CH HEXFET 8.4mOhms 8.5nC
    RoHS: Compliant    		1
    • 1:$1.1600
    • 10:$0.5870
    • 100:$0.4940
    • 500:$0.4670
    • 1000:$0.4380
    • 2500:$0.4020
    • 10000:$0.3830
    IRLR8721PBF  2034
      IRLR8721PBF
      DISTI # 1551907      		Infineon Technologies AGMOSFET, N D-PAK
      RoHS: Compliant      		0
      • 1:£0.6070
      • 25:£0.5120
      • 100:£0.3880
      • 250:£0.3460
      • 1000:£0.3180
      IRLR8721PBF
      DISTI # 1551907      		Infineon Technologies AGMOSFET, N D-PAK
      RoHS: Compliant      		0
      • 1:$1.8400
      • 10:$0.9300
      • 100:$0.7820
      • 500:$0.7400
      • 1000:$0.6930
      • 2500:$0.6370
      • 10000:$0.6060
      • 25000:$0.5860
      영상 부분 # 설명
      IRLR8726TRPBF

      Mfr.#: IRLR8726TRPBF

      OMO.#: OMO-IRLR8726TRPBF

      		 MOSFET 30V 1 N-CH HEXFET 5.8mOhms 15nC
      IRLR8103VPBF

      Mfr.#: IRLR8103VPBF

      OMO.#: OMO-IRLR8103VPBF-INFINEON-TECHNOLOGIES

      		 MOSFET N-CH 30V 91A DPAK
      IRLR8103VT

      Mfr.#: IRLR8103VT

      OMO.#: OMO-IRLR8103VT-1190

      		 신규 및 오리지널
      IRLR8203TRPBF,LR8203,IRL

      Mfr.#: IRLR8203TRPBF,LR8203,IRL

      OMO.#: OMO-IRLR8203TRPBF-LR8203-IRL-1190

      		 신규 및 오리지널
      IRLR8726

      Mfr.#: IRLR8726

      OMO.#: OMO-IRLR8726-1190

      		 신규 및 오리지널
      IRLR8729PBF-1

      Mfr.#: IRLR8729PBF-1

      OMO.#: OMO-IRLR8729PBF-1-1190

      		 신규 및 오리지널
      IRLR8259TRPBF-CUT TAPE

      Mfr.#: IRLR8259TRPBF-CUT TAPE

      OMO.#: OMO-IRLR8259TRPBF-CUT-TAPE-1190

      		 신규 및 오리지널
      IRLR8103TR

      Mfr.#: IRLR8103TR

      OMO.#: OMO-IRLR8103TR-INFINEON-TECHNOLOGIES

      		 MOSFET N-CH 30V 89A DPAK
      IRLR8113TR

      Mfr.#: IRLR8113TR

      OMO.#: OMO-IRLR8113TR-INFINEON-TECHNOLOGIES

      		 MOSFET N-CH 30V 94A DPAK
      IRLR8721PBF

      Mfr.#: IRLR8721PBF

      OMO.#: OMO-IRLR8721PBF-INFINEON-TECHNOLOGIES

      		 IGBT Transistors MOSFET 30V 1 N-CH HEXFET 8.4mOhms 8.5nC
      유효성
      재고:
      Available
      주문 시:
      4500
      수량 입력:
      IRLR8721PBF의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
      참고 가격(USD)
      수량
      단가
      내선 가격
      1
      US$0.49
      US$0.49
      10
      US$0.47
      US$4.70
      100
      US$0.45
      US$44.54
      500
      US$0.42
      US$210.30
      1000
      US$0.40
      US$395.90
      시작
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