ZXTP2013GTA

Mfr. #:: ZXTP2013GTA
제조사:: Diodes Incorporated
설명:: Bipolar Transistors - BJT 100V PNP Med Power
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: ZXTP2013GTA 데이터 시트
배달:: DHL FedEx Ups TNT EMS
지불:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

제품 속성
속성 값

제조사:: 다이오드 주식회사

제품 카테고리:: 양극성 트랜지스터 - BJT

RoHS:: Y

장착 스타일:: SMD/SMT

패키지/케이스:: SOT-223-4

트랜지스터 극성:: PNP

구성:: 하나의

컬렉터-이미터 전압 VCEO 최대:: - 100 V

컬렉터-베이스 전압 VCBO:: - 140 V

이미터-베이스 전압 VEBO:: 7 V

수집기-이미터 포화 전압:: - 240 mV

최대 DC 수집기 전류:: 5 A

이득 대역폭 곱 fT:: 125 MHz

최소 작동 온도:: - 55 C

최대 작동 온도:: + 150 C

시리즈:: ZXTP201

키:: 1.65 mm

길이:: 6.7 mm

포장:: 릴

너비:: 3.7 mm

상표:: 다이오드 주식회사

지속적인 수집가 전류:: - 5 A

Pd - 전력 손실:: 3 W

상품 유형:: BJT - 양극성 트랜지스터

공장 팩 수량:: 1000

하위 카테고리:: 트랜지스터

단위 무게:: 0.003951 oz

Tags: ZXTP2013, ZXTP201, ZXTP20, ZXTP2, ZXTP, ZXT

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

ZXTP2013GTA 설명

***ure Electronics: ZXTP2013G Series PNP 100 V 5 A Medium Power Transistor SMT - SOT-223-3

***ical: Trans GP BJT PNP 100V 5A 3000mW 4-Pin(3+Tab) SOT-223 T/R

***nsix Microsemi: Power Bipolar Transistor, 5A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-261AA, Plastic/Epoxy, 4 Pin

***(Formerly Allied Electronics): Transistor PNP 100V 5A SOT223 | Diodes Inc ZXTP2013GTA

***nell: TRANSISTOR, PNP, SOT-223; Transistor Type:Bipolar; Transistor Polarity:PNP; Voltage, Vceo:115V; Current, Ic Continuous a Max:4A; Voltage, Vce Sat Max:30mV; Power Dissipation:1.6W; Hfe, Min:100; ft, Typ:125MHz; Case Style:SOT-223; Termination Type:SMD

***ark: Transistor Polarity:pnp; Collector Emitter Voltage V(Br)Ceo:100V; Dc Collector Current:5A; Power Dissipation Pd:3W; Transistor Mounting:surface Mount; No. Of Pins:4Pins; Transition Frequency Ft:125Mhz; Dc Current Gain Hfe:5Hfe; Msl:-Rohs Compliant: No

***p One Stop Global: Trans GP BJT PNP 100V 5A 3000mW Automotive 4-Pin(3+Tab) SOT-223 T/R

***nsix Microsemi: Power Bipolar Transistor, 5A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 4 Pin

***ure Electronics: FZT953 Series PNP 5 A 100 V SMT Silicon High Performance Transistor - SOT-223

***(Formerly Allied Electronics): PNP transistor,SOT223,FZT953 5A | Diodes Inc FZT953TA

***nell: TRANSISTOR, PNP, REEL 1K; Transistor Polarity:PNP; Collector-to-Emitter Breakdown Voltage:100V; Typ Gain Bandwidth ft:125MHz; Power Dissipation Pd:3W; DC Collector Current:6A; DC Current Gain hFE:200; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOT-223; Case Style:SOT-223; Current Ic hFE:2A; Full Power Rating Temperature:25°C; Max Current Ic:6A; Max Current Ic Continuous a:6A; Max Power Dissipation Ptot:3W; Max Voltage Vce Sat:50mV; Min Hfe:100; No. of Transistors:1; Power Dissipation:3W; Pulsed Current Icm:10A; Reel Quantity:1000; SMD Marking:FZT953; Tape Width:12mm; Termination Type:SMD; Transistor Type:Bipolar; Voltage Vcbo:200V

***ca Corp: Power Bipolar Transistor, 5A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 4 Pin

***ure Electronics: ZX5T953G Series 5 A 100 V SMT PNP Silicon Medium Power Transistor - SOT-223

***ow.cn: Trans GP BJT PNP 100V 5A 3000mW 4-Pin(3+Tab) SOT-223 T/R

***(Formerly Allied Electronics): Trans GP BJT PNP 100V 5A 4Pin SOT223 | Diodes Inc ZX5T953GTA

***ment14 APAC: TRANSISTOR, PNP, SOT-223; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:100V; Transition Frequency Typ ft:125MHz; Power Dissipation Pd:1.6W; DC Collector Current:5A; DC Current Gain hFE:250; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOT-223; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Av Current Ic:5A; Collector Emitter Voltage Vces:240mV; Continuous Collector Current Ic Max:5A; Current Ic @ Vce Sat:4A; Current Ic Continuous a Max:5A; Current Ic hFE:4A; Full Power Rating Temperature:25°C; Gain Bandwidth ft Typ:125MHz; Hfe Min:15; No. of Transistors:1; Package / Case:SOT-223; Power Dissipation Pd:1.6W; Power Dissipation Ptot Max:3W; Pulsed Current Icm:10A; Resistance R1:60mohm; SMD Marking:X5T953; Termination Type:SMD; Voltage Vcbo:140V

***ical: Trans GP BJT PNP 100V 5A 3000mW 4-Pin(3+Tab) SOT-223 T/R

***ure Electronics: Bipolar Transistors - BJT 1W -100V -5A

***i-Key: TRANS PNP 100V 5A SOT223

***r Electronics: Power Bipolar Transistor, 4A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 4 Pin

*** Source Electronics: Trans GP BJT PNP 100V 4A 1200mW 4-Pin(3+Tab) SOT-223 T/R / TRANS PNP 100V 4A SOT-223

***ure Electronics: NZT753 Series 100 V 4 A PNP Surface Mount Current Driver Transistor - SOT-223

***enic: 100V 1.2W 4A 100@500mA2V 75MHz PNP 300mV@1A50mA -55¡Í~+150¡Í@(Tj) SOT-223 Bipolar Transistors - BJT ROHS

*** Source Electronics: Trans GP BJT PNP 80V 0.5A 1000mW 4-Pin(3+Tab) SOT-223 T/R / TRANS PNP 80V 0.5A SOT223

*** Electronic Components: Bipolar Transistors - BJT PNP Transistor General Purpose

***r Electronics: Small Signal Bipolar Transistor, 0.5A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon

***enic: 1W 500mA 100@100mA1V 50MHz 250mV@100mA10mA PNP -55¡Í~+150¡Í@(Tj) SOT-223 Bipolar Transistors - BJT ROHS

***ark: Pnp 80V Bjt Sot223 Sngl Rohs Compliant: Yes

***ment14 APAC: Transistor, BIPOL, PNP, -80V, SOT-223-3; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-80V; Transition Frequency ft:50MHz; Power

***rchild Semiconductor: PNP General Purpose Amplifier This device is designed for general purpose amplifier applications at collector currents to 300 mA. Sourced from Process 73.

*** Source Electronics: Trans GP BJT PNP 80V 1.2A 1500mW 4-Pin(3+Tab) SOT-223 T/R / TRANS PNP 80V 1.5A SOT-223

***ure Electronics: BCP53 Series 80 V 1.2 A 0.65 W SMT PNP General Purpose Amplifier - SOT-223

*** Electronic Components: Bipolar Transistors - BJT SOT-223 PNP GP AMP

***r Electronics: Power Bipolar Transistor, 1.2A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-261AA, Plastic/Epoxy, 4 Pin

***ark: Transistor; Transistor Type:Bipolar; Transistor Polarity:PNP; Power Dissipation, Pd:1.5W; DC Current Gain Min (hfe):25; Package/Case:SOT-223; C-E Breakdown Voltage:80V; DC Collector Current:1.2A; Leaded Process Compatible:Yes ;RoHS Compliant: Yes

***rchild Semiconductor: This device is designed for general purpose medium power amplifiers and switching circuits requiring collector currents to 1.0 A. Sourced from Process 78. See BCP52 for characteristics.

Market price

부분 #	제조	설명	재고	가격
ZXTP2013GTA DISTI # V72:2272_06708382	Zetex / Diodes Inc	Trans GP BJT PNP 100V 5A Automotive 4-Pin(3+Tab) SOT-223 T/R RoHS: Compliant	23115	15000:$0.3186 6000:$0.3303 3000:$0.3304 1000:$0.3495 500:$0.4686 250:$0.5279 100:$0.5282 25:$0.6817 10:$0.6821 1:$0.8040
ZXTP2013GTA DISTI # V36:1790_06708382	Zetex / Diodes Inc	Trans GP BJT PNP 100V 5A Automotive 4-Pin(3+Tab) SOT-223 T/R RoHS: Compliant	1000	10000:$0.3105 5000:$0.3212 2000:$0.3217 1000:$0.3588
ZXTP2013GTA DISTI # ZXTP2013GCT-ND	Diodes Incorporated	TRANS PNP 100V 5A SOT223 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	1750In Stock	500:$0.5897 100:$0.7030 10:$0.8880 1:$0.9800
ZXTP2013GTA DISTI # ZXTP2013GDKR-ND	Diodes Incorporated	TRANS PNP 100V 5A SOT223 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	1750In Stock	500:$0.5897 100:$0.7030 10:$0.8880 1:$0.9800
ZXTP2013GTA DISTI # ZXTP2013GTR-ND	Diodes Incorporated	TRANS PNP 100V 5A SOT223 RoHS: Compliant Min Qty: 1000 Container: Tape & Reel (TR)	1000In Stock	10000:$0.4020 5000:$0.4158 2000:$0.4350 1000:$0.4625
ZXTP2013GTA DISTI # 31283461	Zetex / Diodes Inc	Trans GP BJT PNP 100V 5A Automotive 4-Pin(3+Tab) SOT-223 T/R RoHS: Compliant	62000	1000:$0.3125
ZXTP2013GTA DISTI # 30150198	Zetex / Diodes Inc	Trans GP BJT PNP 100V 5A Automotive 4-Pin(3+Tab) SOT-223 T/R RoHS: Compliant	23115	15000:$0.3186 6000:$0.3303 3000:$0.3304 1000:$0.3495 500:$0.4686 250:$0.5279 100:$0.5282 26:$0.6817
ZXTP2013GTA DISTI # 30149018	Zetex / Diodes Inc	Trans GP BJT PNP 100V 5A Automotive 4-Pin(3+Tab) SOT-223 T/R RoHS: Compliant	1000	10000:$0.3105 5000:$0.3212 2000:$0.3217 1000:$0.3588
ZXTP2013GTA DISTI # ZXTP2013GTA	Diodes Incorporated	Trans GP BJT PNP 100V 5A 4-Pin(3+Tab) SOT-223 T/R (Alt: ZXTP2013GTA) RoHS: Compliant Min Qty: 1000 Container: Tape and Reel	Europe - 0	1000:€0.3529 2000:€0.3359 4000:€0.3299 6000:€0.3249 10000:€0.3109
ZXTP2013GTA DISTI # ZXTP2013GTA	Diodes Incorporated	Trans GP BJT PNP 100V 5A 4-Pin(3+Tab) SOT-223 T/R - Tape and Reel (Alt: ZXTP2013GTA) RoHS: Compliant Min Qty: 1000 Container: Reel	Americas - 0	1000:$0.3009 2000:$0.2859 4000:$0.2729 6000:$0.2609 10000:$0.2549
ZXTP2013GTA DISTI # 70438961	Diodes Incorporated	Transistor PNP 100V 5A SOT223 RoHS: Compliant	0	125:$0.6300 250:$0.5500 500:$0.4900 1250:$0.4400
ZXTP2013GTA DISTI # 522-ZXTP2013GTA	Diodes Incorporated	Bipolar Transistors - BJT 100V PNP Med Power RoHS: Compliant	3395	1:$0.8200 10:$0.7000 100:$0.5380 500:$0.4760 1000:$0.3750
ZXTP2013GTA DISTI # 7115086P	Zetex / Diodes Inc	TRANSISTOR PNP 100V 5A SOT223, RL	960	25:£0.2600
ZXTP2013GTA	Diodes Incorporated	RoHS: Compliant	Europe - 198
ZXTP2013GTA	Zetex / Diodes Inc		1589
ZXTP2013GTA DISTI # XSFP00000117857	Diodes Incorporated	RoHS: Compliant	28000	28000:$0.5364 1000:$0.5900

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ZXTP2013GTA

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes