SPB18P06PGATMA1

Mfr. #:: SPB18P06PGATMA1
제조사:: Infineon Technologies
설명:: MOSFET P-Ch -60V 18.6A D2PAK-2
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: SPB18P06PGATMA1 데이터 시트
배달:: DHL FedEx Ups TNT EMS
지불:: T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:: SPB18P06PGATMA1 Datasheet SPB18P06PGATMA1 Datasheet (P4-P6)SPB18P06PGATMA1 Datasheet (P7-P8)
ECAD Model:

제품 속성
속성 값

제조사:: 인피니언

제품 카테고리:: MOSFET

RoHS:: Y

기술:: 시

장착 스타일:: SMD/SMT

패키지/케이스:: TO-263-3

채널 수:: 1 Channel

트랜지스터 극성:: P-채널

Vds - 드레인 소스 항복 전압:: 60 V

Id - 연속 드레인 전류:: 18.7 A

Rds On - 드레인 소스 저항:: 101 mOhms

Vgs th - 게이트 소스 임계 전압:: 4 V

Vgs - 게이트 소스 전압:: 20 V

Qg - 게이트 차지:: - 28 nC

최소 작동 온도:: - 55 C

최대 작동 온도:: + 175 C

Pd - 전력 손실:: 81.1 W

구성:: 하나의

채널 모드:: 상승

포장:: 릴

키:: 4.4 mm

길이:: 10 mm

시리즈:: XPB18P06

트랜지스터 유형:: 1 P-Channel

너비:: 9.25 mm

상표:: 인피니언 테크놀로지스

순방향 트랜스컨덕턴스 - 최소:: 5 S

가을 시간:: 11 ns

상품 유형:: MOSFET

상승 시간:: 5.8 ns

공장 팩 수량:: 1000

하위 카테고리:: MOSFET

일반적인 끄기 지연 시간:: 25 ns

일반적인 켜기 지연 시간:: 12 ns

부품 번호 별칭:: G SP000102181 SPB18P06P SPB18P6PGXT

단위 무게:: 0.139332 oz

Tags: SPB18P06PG, SPB18P, SPB18, SPB1, SPB

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SPB18P06PGATMA1 설명

***ler Electronic: MOSFET, P-CH, 60V, 18.7A, TO-263; Transistor Polarity: P Channel; Continuous Drai

***ure Electronics: Single P-Channel 60 V 130 mOhm 21 nC SIPMOS® Power Mosfet - D2PAK

***nell: MOSFET, P-CH, 60V, 18.7A, TO-263; Transistor Polarity:P Channel; Continuous Drain Current Id:-18.7A; Drain Source Voltage Vds:-60V; On Resistance Rds(on):0.101ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-3V; Power Dissipation Pd:81.1W; Operating Temperature Min:-55°C; Operating Temperature Max:175°C; Transistor Case Style:TO-263; No. of Pins:3; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012); Operating Temperature Range:-55°C to +175°C

***ineon: Infineons highly innovative OptiMOS families include p-channel power MOSFETs. These products consistently meet the highest quality and performance demands in key specifications for power system design such as on-state resistance and figure of merit characteristics. | Summary of Features: Enhancement mode; Avalanche rated; Pb-free lead plating; RoHS compliant; Small Signal packages approved to AEC Q101 | Target Applications: Automotive; Consumer; DC-DC; eMobility; Motor control; Notebook; Onboard charger

Market price

부분 #	제조	설명	재고	가격
SPB18P06PGATMA1 DISTI # V72:2272_06384573	Infineon Technologies AG	Trans MOSFET P-CH 60V 18.6A Automotive 3-Pin(2+Tab) D2PAK T/R RoHS: Compliant	1000	1000:$0.4878 500:$0.5168 250:$0.5742 100:$0.6380 25:$0.7977 10:$0.8010 1:$0.9051
SPB18P06PGATMA1 DISTI # SPB18P06PGATMA1CT-ND	Infineon Technologies AG	MOSFET P-CH 60V 18.7A TO-263 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	1955In Stock	500:$0.7565 100:$0.9754 10:$1.2340 1:$1.3900
SPB18P06PGATMA1 DISTI # SPB18P06PGATMA1DKR-ND	Infineon Technologies AG	MOSFET P-CH 60V 18.7A TO-263 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	1955In Stock	500:$0.7565 100:$0.9754 10:$1.2340 1:$1.3900
SPB18P06PGATMA1 DISTI # SPB18P06PGATMA1TR-ND	Infineon Technologies AG	MOSFET P-CH 60V 18.7A TO-263 RoHS: Compliant Min Qty: 1000 Container: Tape & Reel (TR)	1000In Stock	1000:$0.5798
SPB18P06PGATMA1 DISTI # 30205349	Infineon Technologies AG	Trans MOSFET P-CH 60V 18.6A Automotive 3-Pin(2+Tab) D2PAK T/R RoHS: Compliant	10000	1000:$0.5322
SPB18P06PGATMA1 DISTI # 30679613	Infineon Technologies AG	Trans MOSFET P-CH 60V 18.6A Automotive 3-Pin(2+Tab) D2PAK T/R RoHS: Compliant	1000	1000:$0.4878 500:$0.5168 250:$0.5742 100:$0.6380 25:$0.7977 17:$0.8010
SPB18P06P G DISTI # SPB18P06PGATMA1	Infineon Technologies AG	Trans MOSFET P-CH 60V 18.6A 3-Pin TO-263 T/R - Tape and Reel (Alt: SPB18P06PGATMA1) RoHS: Compliant Min Qty: 1000 Container: Reel	Americas - 0	1000:$0.4049 2000:$0.3899 4000:$0.3759 6000:$0.3629 10000:$0.3569
SPB18P06PGATMA1 DISTI # 47W3753	Infineon Technologies AG	MOSFET, P CHANNEL, 60V, 18.7A, TO-263,Transistor Polarity:P Channel,Continuous Drain Current Id:-18.7A,Drain Source Voltage Vds:-60V,On Resistance Rds(on):0.101ohm,Rds(on) Test Voltage Vgs:-10V,Threshold Voltage Vgs:-3V , RoHS Compliant: Yes	110	1:$1.2800 10:$1.0800 100:$0.8320 500:$0.7350
SPB18P06PGATMA1 DISTI # 726-SPB18P06PGATMA1	Infineon Technologies AG	MOSFET P-Ch -60V 18.6A D2PAK-2 RoHS: Compliant	1830	1:$1.1600 10:$0.9840 100:$0.7560 500:$0.6680 1000:$0.5280
SPB18P06P G DISTI # 726-SPB18P06PG	Infineon Technologies AG	MOSFET P-Ch -60V 18.6A D2PAK-2 RoHS: Compliant	1373	1:$1.1600 10:$0.9840 100:$0.7560 500:$0.6680 1000:$0.5280
SPB18P06PGATMA1	Infineon Technologies AG	Power Field-Effect Transistor, 18.7A I(D), 60V, 0.13ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB RoHS: Compliant	450	1000:$0.5000 500:$0.5300 100:$0.5500 25:$0.5700 1:$0.6200
SPB18P06PGATMA1	Infineon Technologies AG	Single P-Channel 60 V 130 mOhm 21 nC SIPMOS Power Mosfet - D2PAK RoHS: Not Compliant	1000Reel	1000:$0.4500 2000:$0.4350
SPB18P06PGATMA1 DISTI # 7533169P	Infineon Technologies AG	MOSFET P-CHANNEL 60V 18.6A SIPMOS TO263, RL	695	10:£0.7120 25:£0.6840 50:£0.6560 100:£0.5460
SPB18P06PGATMA1 DISTI # XSFP00000115904	Infineon Technologies AG	RISCMicrocontroller,32-Bit,FLASH,CORTEX-M3CPU,48MHz,CMOS, PQFP64 RoHS: Compliant	906	223:$0.6000 906:$0.5625
SPB18P06PGATMA1 DISTI # 2212884	Infineon Technologies AG	MOSFET, P-CH, 60V, 18.7A, TO-263 RoHS: Compliant	115	5:£0.7260 25:£0.6690 100:£0.5570 250:£0.5300 500:£0.5030
SPB18P06PGATMA1 DISTI # C1S322000626588	Infineon Technologies AG	MOSFETs RoHS: Compliant	1000	250:$0.5742 100:$0.6380 25:$0.7977 10:$0.8010
SPB18P06PGATMA1 DISTI # C1S322000465871	Infineon Technologies AG	MOSFETs RoHS: Compliant	10000	2000:$0.4910 1000:$0.5930
SPB18P06PGATMA1 DISTI # 2212884	Infineon Technologies AG	MOSFET, P-CH, 60V, 18.7A, TO-263 RoHS: Compliant	133	1:$1.8400 10:$1.5600 100:$1.2000 500:$1.0700 1000:$0.8360

관련 상품

영상	부분 #	설명
	Mfr.#: BZG03C39-HM3-08 OMO.#: OMO-BZG03C39-HM3-08	Zener Diodes Uni-direc 300W Pppm SMA (DO-214AC)
	Mfr.#: CRCW060310K0FKECC OMO.#: OMO-CRCW060310K0FKECC	Thick Film Resistors - SMD 1/10Watt 10Kohms 1% Commercial Use
	Mfr.#: CRCW080510R0FKEAC OMO.#: OMO-CRCW080510R0FKEAC	Thick Film Resistors - SMD 1/8Watt 10ohms 1% Commercial Use
	Mfr.#: CRCW080510R0FKEAC OMO.#: OMO-CRCW080510R0FKEAC-VISHAY-DALE	D12/CRCW0805-C 100 10R 1% ET1
	Mfr.#: CRCW060375R0FKEAC OMO.#: OMO-CRCW060375R0FKEAC-VISHAY-DALE	D11/CRCW0603-C 100 75R 1% ET1
	Mfr.#: CRCW0603100RFKEAC OMO.#: OMO-CRCW0603100RFKEAC-VISHAY-DALE	D11/CRCW0603-C 100 100R 1% ET1
	Mfr.#: BZG03C39-HM3-08 OMO.#: OMO-BZG03C39-HM3-08-VISHAY	DIODE ZENER 39V 1.25W DO214AC
	Mfr.#: CRCW060347K0FKEAC OMO.#: OMO-CRCW060347K0FKEAC-VISHAY-DALE	D11/CRCW0603-C 100 47K 1% ET1
	Mfr.#: C0603C104K5RECAUTO OMO.#: OMO-C0603C104K5RECAUTO-KEMET	Cap Ceramic 0.1uF 50V X7R 10% Pad SMD 0603 125C Automotive T/R

유효성

재고:: Available
주문 시:: 1984
수량 입력:

SPB18P06PGATMA1의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.

참고 가격(USD)

수량
단가
내선 가격

1: ~~US$1.15~~; ~~US$1.15~~

10: ~~US$0.98~~; ~~US$9.84~~

100: ~~US$0.76~~; ~~US$75.60~~

500: ~~US$0.67~~; ~~US$334.00~~

2021년부터 반도체 공급 부족으로 인해 아래 가격은 2021년 이전 정상 가격입니다. 확인을 위해 문의를 보내주세요.

시작

SPB18P06PG 5
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SPB18P06PGATMA1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes