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| 부분 # | 제조 | 설명 | 재고 | 가격 |
|---|---|---|---|---|
| IPD60R2K0C6ATMA1 DISTI # V36:1790_16668128 | Infineon Technologies AG | Metal Oxide Semiconductor Field Effect Transistor | 0 |
|
| IPD60R2K0C6ATMA1 DISTI # IPD60R2K0C6ATMA1-ND | Infineon Technologies AG | MOSFET N-CH 600V TO252 RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR) | Limited Supply - Call |
|
| IPD60R2K0C6ATMA1 DISTI # IPD60R2K0C6ATMA1 | Infineon Technologies AG | Trans MOSFET N-CH 650V 2.4A 3-Pin TO-252 T/R - Tape and Reel (Alt: IPD60R2K0C6ATMA1) RoHS: Compliant Min Qty: 2500 Container: Reel | Americas - 0 |
|
| IPD60R2K0C6ATMA1 DISTI # SP001117714 | Infineon Technologies AG | Trans MOSFET N-CH 650V 2.4A 3-Pin TO-252 T/R (Alt: SP001117714) RoHS: Compliant Min Qty: 2500 Container: Tape and Reel | Europe - 0 |
|
| IPD60R2K0C6ATMA1 DISTI # 49AC0294 | Infineon Technologies AG | MOSFET, N-CH, 600V, 2.4A, TO-252,Transistor Polarity:N Channel,Continuous Drain Current Id:2.4A,Drain Source Voltage Vds:600V,On Resistance Rds(on):1.8ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,Power DissipationRoHS Compliant: Yes | 0 |
|
| IPD60R2K0C6ATMA1 DISTI # 726-IPD60R2K0C6ATMA1 | Infineon Technologies AG | MOSFET LOW POWER_LEGACY RoHS: Compliant | 4598 |
|
| IPD60R2K0C6ATMA1 DISTI # 2839462 | Infineon Technologies AG | MOSFET, N-CH, 600V, 2.4A, TO-252 RoHS: Compliant | 0 |
|
| IPD60R2K0C6ATMA1 DISTI # 2839462 | Infineon Technologies AG | MOSFET, N-CH, 600V, 2.4A, TO-252 | 0 |
|
| 영상 | 부분 # | 설명 |
|---|---|---|
|
Mfr.#: IPD60R2K0C6ATMA1 OMO.#: OMO-IPD60R2K0C6ATMA1 |
MOSFET LOW POWER_LEGACY |
|
Mfr.#: IPD60R2K0C6BTMA1 OMO.#: OMO-IPD60R2K0C6BTMA1 |
MOSFET N-Ch 650V 2.4A DPAK-2 CoolMOS C6 |
|
Mfr.#: IPD60R2K0C6ATMA1 |
MOSFET N-CH 600V TO252 |
|
|
Mfr.#: IPD60R2K0C6 OMO.#: OMO-IPD60R2K0C6-1190 |
MOSFET N-Ch 650V 2.4A DPAK-2 CoolMOS C6 |
|
|
Mfr.#: IPD60R2K0C6,6R2K0C6, |
신규 및 오리지널 |
|
Mfr.#: IPD60R2K0C6BTMA1 |
MOSFET N-CH 600V 2.4A TO252-3 |