STGW30M65DF2

STGW30M65DF2
Mfr. #:
STGW30M65DF2
제조사:
STMicroelectronics
설명:
IGBT Transistors Trench gate field-stop IGBT M series, 650 V 30 A low loss
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
STGW30M65DF2 데이터 시트
배달:
DHL FedEx Ups TNT EMS
지불:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
추가 정보:
STGW30M65DF2 추가 정보 STGW30M65DF2 Product Details
제품 속성
속성 값
제조사:
ST마이크로일렉트로닉스
제품 카테고리:
IGBT 트랜지스터
RoHS:
Y
기술:
패키지/케이스:
TO-247-3
장착 스타일:
구멍을 통해
구성:
하나의
컬렉터-이미터 전압 VCEO 최대:
650 V
수집기-이미터 포화 전압:
1.55 V
최대 게이트 이미터 전압:
20 V
25C에서 연속 수집기 전류:
60 A
Pd - 전력 손실:
258 W
최소 작동 온도:
- 55 C
최대 작동 온도:
+ 175 C
시리즈:
STGW30M65DF2
연속 수집가 현재 IC 최대:
60 A
상표:
ST마이크로일렉트로닉스
게이트-이미터 누설 전류:
+/- 250 nA
상품 유형:
IGBT 트랜지스터
공장 팩 수량:
600
하위 카테고리:
IGBT
Tags
STGW30, STGW3, STGW, STG
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***icroelectronics
Trench gate field-stop IGBT M series, 650 V 30 A low loss
***ical
Trans IGBT Chip N-CH 650V 60A 258000mW 3-Pin(3+Tab) TO-247 Tube
***ronik
IGBT 650V 30A 1,55V TO247-3 RoHSconf
***r Electronics
Insulated Gate Bipolar Transistor, 60A I(C), 650V V(BR)CES, N-Channel, TO-247
***icroelectronics SCT
Short-circuit rugged IGBT, TO-247, Tube
***i-Key
TRENCH GATE FIELD-STOP IGBT M SE
STM 650V M Series Trench Gate Field-Stop IGBTs
STMicroelectronics 650V M Series Trench Gate Field-Stop IGBTs are developed using an advanced proprietary trench gate field-stop structure. The 650V M series supply a 3A-150A maximum collector current for applications with up to 100kHz operating frequency. They have an optimized design and are available in a tailored built-in anti-parallel diode.
부분 # 제조 설명 재고 가격
STGW30M65DF2
DISTI # V99:2348_17623290
STMicroelectronicsTrans IGBT Chip N-CH 650V 60A 3-Pin(3+Tab) TO-247 Tube
RoHS: Compliant
427
  • 250:$2.2420
  • 100:$2.3609
  • 10:$2.7260
  • 1:$3.5167
STGW30M65DF2
DISTI # 497-16485-5-ND
STMicroelectronicsTRENCH GATE FIELD-STOP IGBT M SE
RoHS: Compliant
Min Qty: 1
Container: Tube
195In Stock
  • 2520:$1.7066
  • 510:$2.1247
  • 120:$2.4959
  • 30:$2.8800
  • 10:$3.0460
  • 1:$3.3900
STGW30M65DF2
DISTI # 25947923
STMicroelectronicsTrans IGBT Chip N-CH 650V 60A 3-Pin(3+Tab) TO-247 Tube
RoHS: Compliant
427
  • 250:$2.1040
  • 100:$2.1980
  • 10:$2.4770
  • 4:$3.1009
STGW30M65DF2
DISTI # STGW30M65DF2
STMicroelectronicsN-channel STripFET > 30 V to 350 V (Alt: STGW30M65DF2)
RoHS: Compliant
Min Qty: 30
Europe - 600
  • 300:€1.3900
  • 180:€1.4900
  • 120:€1.5900
  • 30:€1.6900
  • 60:€1.6900
STGW30M65DF2
DISTI # STGW30M65DF2
STMicroelectronicsN-channel STripFET > 30 V to 350 V - Tape and Reel (Alt: STGW30M65DF2)
RoHS: Not Compliant
Min Qty: 1000
Container: Reel
Americas - 0
  • 6000:$1.6900
  • 10000:$1.6900
  • 4000:$1.7900
  • 2000:$1.8900
  • 1000:$1.9900
STGW30M65DF2
DISTI # 84Y8611
STMicroelectronicsPTD HIGH VOLTAGE0
  • 1:$1.5300
STGW30M65DF2.
DISTI # 30AC0855
STMicroelectronicsPTD HIGH VOLTAGE0
  • 6000:$1.6900
  • 4000:$1.7900
  • 2000:$1.8900
  • 1:$1.9900
STGW30M65DF2
DISTI # 511-STGW30M65DF2
STMicroelectronicsIGBT Transistors Trench gate field-stop IGBT M series, 650 V 30 A low loss
RoHS: Compliant
514
  • 1:$3.2200
  • 10:$2.7400
  • 100:$2.3700
  • 250:$2.2500
  • 500:$2.0200
  • 1000:$1.7000
  • 2500:$1.6200
  • 5000:$1.5600
영상 부분 # 설명
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Mfr.#: STGIB20M60TS-L

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Motor / Motion / Ignition Controllers & Drivers SLLIMM 2nd series IPM, 3-phase inverter, 25 A, 600 V short-circuit rugged IGBT
STGWA40H65DFB

Mfr.#: STGWA40H65DFB

OMO.#: OMO-STGWA40H65DFB

IGBT Transistors Trench gate field-stop IGBT, HB series 650 V, 40 A high speed
STGWA20M65DF2

Mfr.#: STGWA20M65DF2

OMO.#: OMO-STGWA20M65DF2

IGBT Transistors Trench gate field-stop IGBT M series, 650 V 20 A low loss
STGW30H60DFB

Mfr.#: STGW30H60DFB

OMO.#: OMO-STGW30H60DFB

IGBT Transistors Trench gate field-stop IGBT, HB series 600 V, 30 A high speed
B32776T1275K000

Mfr.#: B32776T1275K000

OMO.#: OMO-B32776T1275K000

Film Capacitors ALUM LYTIC RADIAL 6 800 UF 35 V
STGW30H60DFB

Mfr.#: STGW30H60DFB

OMO.#: OMO-STGW30H60DFB-STMICROELECTRONICS

IGBT 600V 60A 260W TO247
STGWA20M65DF2

Mfr.#: STGWA20M65DF2

OMO.#: OMO-STGWA20M65DF2-STMICROELECTRONICS

IGBT TRENCH 650V 40A TO247
STGIB20M60TS-L

Mfr.#: STGIB20M60TS-L

OMO.#: OMO-STGIB20M60TS-L-1190

THREE-PHASE BRUSHLESS MOTORS
STGWA40H65DFB

Mfr.#: STGWA40H65DFB

OMO.#: OMO-STGWA40H65DFB-STMICROELECTRONICS

IGBT TRENCH 650V 80A TO247
OPA189IDR

Mfr.#: OPA189IDR

OMO.#: OMO-OPA189IDR-TEXAS-INSTRUMENTS

36V ZERO DRIFT OP-AMP
유효성
재고:
504
주문 시:
2487
수량 입력:
STGW30M65DF2의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
참고 가격(USD)
수량
단가
내선 가격
1
US$3.22
US$3.22
10
US$2.74
US$27.40
100
US$2.37
US$237.00
250
US$2.25
US$562.50
500
US$2.02
US$1 010.00
1000
US$1.70
US$1 700.00
2500
US$1.62
US$4 050.00
5000
US$1.56
US$7 800.00
시작
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