A2I20H080GNR1

Mfr. #:: A2I20H080GNR1
제조사:: NXP / Freescale
설명:: RF Amplifier A2I20H080GN/FM15F///REEL 13 Q2 DP
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: A2I20H080GNR1 데이터 시트
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HTML Datasheet:: A2I20H080GNR1 Datasheet A2I20H080GNR1 Datasheet (P4-P6)A2I20H080GNR1 Datasheet (P7-P9)A2I20H080GNR1 Datasheet (P10-P12)A2I20H080GNR1 Datasheet (P13-P15)A2I20H080GNR1 Datasheet (P16-P18)A2I20H080GNR1 Datasheet (P19-P21)A2I20H080GNR1 Datasheet (P22)
ECAD Model:
추가 정보:: A2I20H080GNR1 추가 정보

제품 속성
속성 값

제조사:: NXP

제품 카테고리:: RF 증폭기

장착 스타일:: SMD/SMT

패키지/케이스:: TO-270WB-15

유형:: RF LDMOS 광대역 통합 전력 증폭기

동작 주파수:: 1.8 GHz to 2.2 GHz

P1dB - 압축점:: 48.5 dBm

얻다:: 27.8 dB

작동 공급 전압:: 30 V

테스트 빈도:: 1.88 GHz

작동 공급 전류:: 195 mA

최소 작동 온도:: - 40 C

최대 작동 온도:: + 150 C

포장:: 릴

상표:: NXP / 프리스케일

채널 수:: 2 Channel

상품 유형:: RF 증폭기

공장 팩 수량:: 500

하위 카테고리:: 무선 및 RF 집적 회로

부품 번호 별칭:: 935313345528

단위 무게:: 0.056385 oz

Tags: A2I20H08, A2I20H, A2I20, A2I2, A2I

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

A2I20H080GNR1 설명

***W: Amplifier,1800 to 2200 MHz, 70 W, Typ Gain in dB is 28.2 @ 1840 MHz, 30 V, LDMOS, SOT1722

***escale Semiconductor: AIRFAST RF LDMOS WIDEBAND INTEGRATED POWER AMPLIFIERS 1800-2200 MHz, 12.5 W AVG., 28 V

***hardson RFPD: RF & MW POWER AMPLIFIER

***et: Wideband IC LDMOS 1800-2200MHz 13.5W 30V Airfast

***i-Key: AIRFAST RF LDMOS WIDEBAND INTEGR

A2I20H080GNR1 추가 정보

NXP RF-IF Solutions: NXP RF-IF Solutions meet the needs of the most demanding RF applications by allowing designers to meet the highest specifications for performance while still retaining potential trade-offs with respect to efficiency, power, ruggedness, consistency, and integration levels. The NXP RF-IF portfolio covers the majority of communication and transmission systems, making it easy to find a solution that matches a designer's particular requirements. NXP RF-IF solutions include the SA6xx Series RF/IF building blocks that are ideal for a variety of niche handheld RF products. Available in small-footprint packages, SA6xx solutions save PCB space while providing better RF performance.Learn More

Market price

부분 #	제조	설명	재고	가격
A2I20H080GNR1 DISTI # A2I20H080GNR1-ND	NXP Semiconductors	AIRFAST RF LDMOS WIDEBAND INTEGR RoHS: Not compliant Min Qty: 500 Container: Tape & Reel (TR)	Temporarily Out of Stock	500:$43.4128
A2I20H080GNR1 DISTI # A2I20H080GNR1	NXP Semiconductors	Wideband IC LDMOS 1800-2200MHz 13.5W 30V Airfast - Tape and Reel (Alt: A2I20H080GNR1) RoHS: Compliant Min Qty: 500 Container: Reel	Americas - 0	500:$43.1900 1000:$41.4900 2000:$39.8900 3000:$38.3900 5000:$37.6900
A2I20H080GNR1 DISTI # 841-A2I20H080GNR1	NXP Semiconductors	RF Amplifier Airfast RF LDMOS Wideband Integrated Power Amplifier, 1800-2200 MHz, 12.5 W Avg., 30 V RoHS: Compliant	0	500:$43.4200
A2I20H080GNR1 DISTI # A2I20H080GNR1	NXP Semiconductors	RF & MW POWER AMPLIFIER RoHS: Compliant	490	1:$66.3000 10:$59.9200 25:$56.6500

관련 상품

영상	부분 #	설명
	Mfr.#: A2I20H060NR1 OMO.#: OMO-A2I20H060NR1	RF Amplifier A2I20H060N/FM15F///REEL 13 Q2 DP
	Mfr.#: A2I20H080NR1 OMO.#: OMO-A2I20H080NR1	RF Amplifier A2I20H080N/FM15F///REEL 13 Q2 DP
	Mfr.#: A2I20H060GNR1 OMO.#: OMO-A2I20H060GNR1	RF Amplifier Airfast RF LDMOS Wideband Integrated Power Amplifier, 1805-2170 MHz, 12 W Avg., 28 V
	Mfr.#: A2I20H060GNR1 OMO.#: OMO-A2I20H060GNR1-NXP-SEMICONDUCTORS	RF Amplifier AIRFAST RF POWER LDMOS TRANSISTORS 1805-2170 MHz, 12 W AVG, 28 V
	Mfr.#: A2I20H060NR1 OMO.#: OMO-A2I20H060NR1-NXP-SEMICONDUCTORS	RF Amplifier AIRFAST RF POWER LDMOS TRANSISTORS 1805-2170 MHz, 12 W AVG, 28 V
	Mfr.#: A2I20H080GNR1 OMO.#: OMO-A2I20H080GNR1-NXP-SEMICONDUCTORS	RF Amplifier AIRFAST RF LDMOS WIDEBAND INTEGRATED POWER AMPLIFIERS 1800-2200 MHz, 12.5 W AVG, 28 V
	Mfr.#: A2I20H060N: OMO.#: OMO-A2I20H060N--1190	신규 및 오리지널
	Mfr.#: A2I20H080N OMO.#: OMO-A2I20H080N-1190	신규 및 오리지널
	Mfr.#: A2I20H080NQQ1633J OMO.#: OMO-A2I20H080NQQ1633J-1190	신규 및 오리지널
	Mfr.#: A2I20H080NR1 OMO.#: OMO-A2I20H080NR1-NXP-SEMICONDUCTORS	AIRFAST RF LDMOS WIDEBAND INTEGR

유효성

재고:: Available
주문 시:: 1000
수량 입력:

A2I20H080GNR1의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.

시작

A2I20H08 4
A2I20H 7
A2I20 13
A2I2 23
A2I 49

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A2I20H080GNR1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes