CGHV1F025S

Mfr. #:: CGHV1F025S
제조사:: N/A
설명:: RF MOSFET HEMT 40V 12DFN
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: CGHV1F025S 데이터 시트
배달:: DHL FedEx Ups TNT EMS
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ECAD Model:
추가 정보:: CGHV1F025S 추가 정보

제품 속성
속성 값

제조사: 울프스피드 / 크리어

제품 카테고리: 트랜지스터 - FET, MOSFET - 단일

포장: 릴

장착 스타일: SMD/SMT

작동 온도 범위: - 40 C to + 150 C

패키지 케이스: DFN-12

기술: GaN SiC

구성: 하나의

트랜지스터형: 헴트

얻다: 11 dB

등급: -

출력 파워: 25 W

Pd 전력 손실: -

최대 작동 온도: + 150 C

최소 작동 온도: - 40 C

애플리케이션: -

동작 주파수: 15 GHz

Id-연속-드레인-전류: 2 A

Vds-드레인-소스-고장-전압: 100 V

Vgs-th-Gate-Source-Threshold-Voltage: - 3 V

Rds-On-Drain-Source-Resistance: -

트랜지스터 극성: N-채널

순방향 트랜스컨덕턴스-최소: -

개발 키트: CGHV1F025S-TB

Vgs-Gate-Source-Breakdown-Voltage: - 10 V to + 2 V

게이트 소스 차단 전압: -

최대 드레인 게이트 전압: -

NF-노이즈-피겨: -

P1dB-압축점: -

Tags: CGHV1F, CGHV1, CGHV, CGH

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Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

CGHV1F025S 설명

***i-Key: RF MOSFET HEMT 40V 12DFN

***hardson RFPD: RF POWER TRANSISTOR

CGHV1F025S 추가 정보

GaN HEMTs: Cree GaN (Gallium Nitride) HEMTs (High Electron Mobility Transistors) offers greater power density and wider bandwidths compared to Si and GaAs transistors. GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher thermal conductivity.

X-Band GaN HEMTs & MMICs: Wolfspeed/Cree X-Band GaN HEMTs & MMICs wide bandgap increases the breakdown field by five times and the power density by a factor of 10 to 20 compared with GaAs-based devices. Cree GaN components are smaller and have a lower capacitance for the same operating power. This means that amplifiers can operate over a wider bandwidth while exhibiting good input and output matching. X-band power amplifiers are moving away from inefficient GaAs pHEMTs and unreliable Traveling Wave Tubes due to the significant advantages of GaN HEMTs and MMICs.Learn More

Market price

부분 #	제조	설명	재고	가격
CGHV1F025S-AMP1 DISTI # CGHV1F025S-AMP1-ND	Wolfspeed	DEMO HEMT TRANS AMP1 CGHV1F025S RoHS: Compliant Min Qty: 1 Container: Bulk	1In Stock	1:$637.4400
CGHV1F025S DISTI # CGHV1F025STR-ND	Wolfspeed	RF MOSFET HEMT 40V 12DFN RoHS: Compliant Min Qty: 250 Container: Tape & Reel (TR)	Temporarily Out of Stock	250:$87.4405
CGHV1F025S DISTI # CGHV1F025SCT-ND	Wolfspeed	RF MOSFET HEMT 40V 12DFN RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	Temporarily Out of Stock	100:$96.1846 1:$97.9300
CGHV1F025S DISTI # CGHV1F025SDKR-ND	Wolfspeed	RF MOSFET HEMT 40V 12DFN RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Temporarily Out of Stock	100:$96.1846 1:$97.9300
CGHV1F025S DISTI # 941-CGHV1F025S	Cree, Inc.	RF JFET Transistors GaN HEMT DC-15GHz, 25 Watt RoHS: Compliant	0	1:$87.4400
CGHV1F025S-AMP1 DISTI # 941-CGHV1F025S-AMP1	Cree, Inc.	RF Development Tools Test Board with GaN HEMT RoHS: Compliant	1	1:$637.4400

관련 상품

영상	부분 #	설명
	Mfr.#: CGHV14250F-TB OMO.#: OMO-CGHV14250F-TB	RF Development Tools Test Board without GaN HEMT
	Mfr.#: CGHV14250 OMO.#: OMO-CGHV14250-1190	신규 및 오리지널
	Mfr.#: CGHV14800F OMO.#: OMO-CGHV14800F-WOLFSPEED	RF MOSFET HEMT 50V 440117
	Mfr.#: CGHV1J006D-GP4 OMO.#: OMO-CGHV1J006D-GP4-WOLFSPEED	RF MOSFET HEMT 40V DIE
	Mfr.#: CGHV1J025 OMO.#: OMO-CGHV1J025-1190	신규 및 오리지널
	Mfr.#: CGHV14250P OMO.#: OMO-CGHV14250P-1152	RF POWER TRANSISTOR
	Mfr.#: CGHV1F025S-AMP1 OMO.#: OMO-CGHV1F025S-AMP1-WOLFSPEED	DEMO HEMT TRANS AMP1 CGHV1F025S
	Mfr.#: CGHV1F025S OMO.#: OMO-CGHV1F025S-WOLFSPEED	RF MOSFET HEMT 40V 12DFN
	Mfr.#: CGHV1J006D OMO.#: OMO-CGHV1J006D-318	RF JFET Transistors DC-18GHz 6W GaN Gain@10GHz 17dB
	Mfr.#: CGHV1J025D OMO.#: OMO-CGHV1J025D-318	RF JFET Transistors DC-18GHz 25W GaN Gain@10GHz 17dB