IRGB20B60PD1PBF

Mfr. #:: IRGB20B60PD1PBF
제조사:: Infineon Technologies
설명:: IGBT Transistors 600V Warp2 150kHz
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: IRGB20B60PD1PBF 데이터 시트
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HTML Datasheet:: IRGB20B60PD1PBF Datasheet IRGB20B60PD1PBF Datasheet (P4-P6)IRGB20B60PD1PBF Datasheet (P7-P9)IRGB20B60PD1PBF Datasheet (P10-P11)
ECAD Model:
추가 정보:: IRGB20B60PD1PBF 추가 정보

제품 속성
속성 값

제조사:: 인피니언

제품 카테고리:: IGBT 트랜지스터

RoHS:: Y

기술:: 시

패키지/케이스:: TO-220-3

장착 스타일:: 구멍을 통해

구성:: 하나의

컬렉터-이미터 전압 VCEO 최대:: 600 V

수집기-이미터 포화 전압:: 2.05 V

최대 게이트 이미터 전압:: 20 V

25C에서 연속 수집기 전류:: 40 A

Pd - 전력 손실:: 215 W

최소 작동 온도:: - 55 C

최대 작동 온도:: + 150 C

포장:: 튜브

연속 수집가 현재 IC 최대:: 40 A

키:: 8.77 mm

길이:: 10.54 mm

너비:: 4.69 mm

상표:: 인피니언 테크놀로지스

게이트-이미터 누설 전류:: 100 nA

상품 유형:: IGBT 트랜지스터

공장 팩 수량:: 1000

하위 카테고리:: IGBT

부품 번호 별칭:: SP001548090

단위 무게:: 0.211644 oz

Tags: IRGB20B60PD1, IRGB2, IRGB, IRG

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IRGB20B60PD1PBF 설명

***ineon SCT: IRGB20B60PD1PBF Series 600 V 22 A N-Channel UltraFast IGBT - TO-220AB, TO220COPAK-3, RoHS

***et: Trans IGBT Chip N-CH 600V 40A 3-Pin(3+Tab) TO-220AB

*** Stop Electro: Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel, TO-220AB

***ment14 APAC: IGBT, 600V, 40A, TO-220AB; Transistor Type:IGBT; DC Collector Current:40A; Collector Emitter Voltage Vces:2.35V; Power Dissipation Pd:215W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Ic Continuous a Max:40A; Package / Case:TO-220AB; Power Dissipation Max:215W; Power Dissipation Pd:215W; Power Dissipation Pd:215W; Pulsed Current Icm:80A; Rise Time:5ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:600V

***p One Stop Global: Trans IGBT Chip N-CH 600V 40A 160000mW 3-Pin(3+Tab) TO-220AB Tube

***ineon SCT: 600V Warp 60-150 kHz Discrete IGBT in a TO-220AB package, TO220-3, RoHS

***ure Electronics: IRG4BC40WPBF Series 600 V 20 A N-Channel Latest Generation IGBT - TO-220AB

***ineon: Target Applications: Air Conditioner; Dishwasher; Fan; PFC; Pump; Washing Machine

*** Stop Electro: Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel, TO-220AB

***nell: IGBT, TO-220; Collector Emitter Saturation Voltage Vce(on): 2.5V; Power Dissipation Pd: 160W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-220; No. of Pins: 3Pins; MSL: -; SVHC: No SVHC (27-Jun-2018); Cur

***ment14 APAC: IGBT, TO-220; Transistor Type:IGBT; DC Collector Current:40A; Collector Emitter Voltage Vces:2.5V; Power Dissipation Pd:160W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Ic Continuous a Max:40A; Current Temperature:25°C; Fall Time Max:74ns; Fall Time tf:74ns; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:TO-220; Power Dissipation Max:160W; Power Dissipation Pd:160W; Power Dissipation Pd:160W; Pulsed Current Icm:160A; Rise Time:22ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:600V

*** Electronics: IGBT IRG4BC40UPBF IGBT 600V 40A 160W Through Hole TO-220AB 20A/600V TO-220AB

***p One Stop: Trans IGBT Chip N-CH 600V 40A 160000mW 3-Pin(3+Tab) TO-220AB Tube

***ineon SCT: 600V UltraFast 8-60 kHz Discrete IGBT in a TO-220AB package, TO220-3, RoHS

***ure Electronics: IRG4BC40UPbF Series 600 V 20 A N-Channel Ultrafast Speed IGBT - TO-220AB

***ineon: Target Applications: Air Conditioner; Dishwasher; Fan; PFC; Pump; Washing Machine

***itex: Transistor; IGBT; 600V; 40A; 160W; -55+150 deg.C; THT; TO220

***roFlash: Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel, TO-220AB

***ment14 APAC: IGBT, TO-220; Transistor Type:IGBT; DC Collector Current:40A; Collector Emitter Voltage Vces:2.4V; Power Dissipation Pd:160W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Ic Continuous a Max:40A; Current Temperature:25°C; Device Marking:IRG4BC40UPBF; Fall Time tf:180ns; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:TO-220; Power Dissipation Max:160W; Power Dissipation Pd:160W; Power Dissipation Pd:160W; Pulsed Current Icm:160A; Rise Time:19ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:600V

***p One Stop Global: Trans IGBT Chip N-CH 600V 49A 160000mW 3-Pin(3+Tab) TO-220AB Tube

***eco: Transistor IGBT Chip Negative Channel 600 Volt 49A 3-Pin(3+Tab) TO-220AB

***ure Electronics: IRG4BC40FPbF Series 600 V 27 A N-Channel Fast Speed IGBT - TO-220AB

***ineon SCT: 600V Fast 1-8 kHz Discrete IGBT in a TO-220AB package, TO220-3, RoHS

*** Stop Electro: Insulated Gate Bipolar Transistor, 49A I(C), 600V V(BR)CES, N-Channel, TO-220AB

***trelec: IGBT Housing type: TO-220AB Collector-emitter breakdown voltage: 600 V Collector-emitter saturation voltage: 1.5 V Current release time: 170 ns Power dissipation: 160 W

***ment14 APAC: IGBT, TO-220; Transistor Type:IGBT; DC Collector Current:49A; Collector Emitter Voltage Vces:1.8V; Power Dissipation Pd:160W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Ic Continuous a Max:49A; Current Temperature:25°C; Fall Time Max:170ns; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:TO-220; Power Dissipation Max:160W; Power Dissipation Pd:160W; Power Dissipation Pd:160W; Pulsed Current Icm:200A; Rise Time:18ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:600V

*** Source Electronics: Trans IGBT Chip N-CH 600V 34A 125000mW 3-Pin(3+Tab) TO-220 Tube / IGBT 600V 34A 125W TO220AB

***ure Electronics: HGTP7N60A4 Series 600 V 34 A Flange Mount SMPS N-Channel IGBT-TO-220AB

***r Electronics: Insulated Gate Bipolar Transistor, 34A I(C), 600V V(BR)CES, N-Channel, TO-220AB

***ment14 APAC: IGBT, N, TO-220; Transistor Type:IGBT; DC Collector Current:34A; Collector Emitter Voltage Vces:2.7V; Power Dissipation Pd:125W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Ic Continuous a Max:34A; Current Temperature:25°C; Fall Time tf:45ns; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:TO-220AB; Pin Format:GCE; Power Dissipation Max:125W; Power Dissipation Pd:125W; Power Dissipation Pd:125W; Power Dissipation Ptot Max:125W; Pulsed Current Icm:56A; Rise Time:11ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:600V

***rchild Semiconductor: The HGTP7N60A4 combines the best features of high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been optimized for fast switching applications, such as UPS and welder.

IRGB20B60PD1PBF 추가 정보

300-1200V IGBTs: Infineon Rectifier has an extensive portfolio of IGBTs that ranges from 300V to 1200V and achieves the highest performance for specific application requirements. The Infineon IGBT portfolio includes the new ultra-fast IRG7PH 1200V Trench IGBTs that offer higher system efficiency while cutting switching losses and delivering higher switching frequencies. International Infineon IRG7PH ultra-fast 1200V IGBTs utilize thin wafer Field-Stop Trench technology that significantly reduces switching and conduction losses to deliver higher power density and greater efficiency at higher frequencies.Learn More

Market price

부분 #	제조	설명	재고	가격
IRGB20B60PD1PBF DISTI # IRGB20B60PD1PBF-ND	Infineon Technologies AG	IGBT 600V 40A 215W TO220AB RoHS: Compliant Min Qty: 1 Container: Tube	1458In Stock	1000:$1.7267 500:$2.0473 100:$2.4050 10:$2.9350 1:$3.2700
IRGB20B60PD1PBF DISTI # IRGB20B60PD1PBF	Infineon Technologies AG	Trans IGBT Chip N-CH 600V 40A 3-Pin(3+Tab) TO-220AB - Rail/Tube (Alt: IRGB20B60PD1PBF) RoHS: Compliant Min Qty: 1 Container: Tube	Americas - 187	1:$2.0900 10:$1.8900 25:$1.8900 50:$1.8900 100:$1.5900 500:$1.3900 1000:$1.3900
IRGB20B60PD1PBF DISTI # SP001548090	Infineon Technologies AG	Trans IGBT Chip N-CH 600V 40A 3-Pin(3+Tab) TO-220AB (Alt: SP001548090) RoHS: Compliant Min Qty: 1	Europe - 0	1:€1.7900 10:€1.5900 25:€1.4900 50:€1.3900 100:€1.2900 500:€1.2900 1000:€1.1900
IRGB20B60PD1PBF DISTI # 63J7440	Infineon Technologies AG	SINGLE IGBT, 600V, 40A,DC Collector Current:40A,Collector Emitter Saturation Voltage Vce(on):2.5V,Power Dissipation Pd:215W,Collector Emitter Voltage V(br)ceo:600V,No. of Pins:3Pins,Operating Temperature Max:150°C,MSL:- RoHS Compliant: Yes	115	500:$1.9500 250:$2.1800 100:$2.3000 50:$2.4200 25:$2.5300 10:$2.6500 1:$3.1100
IRGB20B60PD1PBF. DISTI # 29AC7086	Infineon Technologies AG	INDUSTRY 59 ROHS COMPLIANT: YES	0	500:$1.9500 250:$2.1800 100:$2.3000 50:$2.4200 25:$2.5800 10:$2.7000 1:$3.1700
IRGB20B60PD1PBF DISTI # 70017558	Infineon Technologies AG	IGBT with Ultrafast Soft Recovery Diode,600 V,13 A,TO-220AB RoHS: Compliant	0	5:$5.2500
IRGB20B60PD1PBF	Infineon Technologies AG	IRGB20B60PD1PBF Series 600 V 22 A N-Channel UltraFast IGBT - TO-220AB RoHS: Compliant	3075Tube	10:$1.9500 300:$1.7100
IRGB20B60PD1PBF DISTI # 942-IRGB20B60PD1PBF	Infineon Technologies AG	IGBT Transistors 600V Warp2 150kHz RoHS: Compliant	1695	1:$3.1100 10:$2.6500 100:$2.3000 250:$2.1800 500:$1.9500 1000:$1.6500
IRGB20B60PD1PBF	International Rectifier		42	26:$2.7800 8:$3.0580 1:$4.1700
IRGB20B60PD1PBF DISTI # 6503533	Infineon Technologies AG	TRANSISTOR IGBT N-CH 600V 40A TO220AB, PK	780	25:£1.9660 5:£2.1860
IRGB20B60PD1PBF DISTI # IRGB20B60PD1PBF	Infineon Technologies AG	Transistor: IGBT,600V,40A,215W,TO220AB	56	1:$4.1700 3:$3.7400 10:$3.1000 50:$2.6500
IRGB20B60PD1PBF DISTI # 8659583	Infineon Technologies AG	IGBT, 600V, 40A, TO-220AB RoHS: Compliant	913	1000:$2.6200 500:$3.0900 250:$3.4600 100:$3.6500 10:$4.1900 1:$4.9300
IRGB20B60PD1PBF DISTI # 8659583	Infineon Technologies AG	IGBT, 600V, 40A, TO-220AB RoHS: Compliant	853	500:£1.2900 250:£1.4400 100:£1.6000 10:£1.7500 1:£2.2300
IRGB20B60PD1PBF DISTI # XSFP00000050570	Infineon Technologies AG	RoHS: Compliant	2500	2500:$2.4400 100:$2.6000

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IRGB20B60PD1PBF

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes