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Quality GuaranteesWe provide 90-360 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.
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| 부분 # | 제조 | 설명 | 재고 | 가격 |
|---|---|---|---|---|
| BSC057N08NS3GATMA1 DISTI # BSC057N08NS3GATMA1TR-ND | Infineon Technologies AG | MOSFET N-CH 80V 100A TDSON-8 RoHS: Compliant Min Qty: 5000 Container: Tape & Reel (TR) | On Order |
|
| BSC057N08NS3GATMA1 DISTI # BSC057N08NS3GATMA1CT-ND | Infineon Technologies AG | MOSFET N-CH 80V 100A TDSON-8 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT) | Temporarily Out of Stock |
|
| BSC057N08NS3GATMA1 DISTI # BSC057N08NS3GATMA1DKR-ND | Infineon Technologies AG | MOSFET N-CH 80V 100A TDSON-8 RoHS: Compliant Min Qty: 1 Container: Digi-Reel® | Temporarily Out of Stock |
|
| BSC057N08NS3G DISTI # BSC057N08NS3 G | Infineon Technologies AG | Trans MOSFET N-CH 80V 16A 8-Pin TDSON T/R (Alt: BSC057N08NS3 G) RoHS: Compliant Min Qty: 5000 Container: Tape and Reel | Asia - 0 | |
| BSC057N08NS3GATMA1 DISTI # BSC057N08NS3GATMA1 | Infineon Technologies AG | Trans MOSFET N-CH 80V 16A 8-Pin TDSON EP - Tape and Reel (Alt: BSC057N08NS3GATMA1) RoHS: Compliant Min Qty: 5000 Container: Reel | Americas - 0 |
|
| BSC057N08NS3GATMA1 DISTI # 79X1332 | Infineon Technologies AG | MOSFET, N-CH, 80V, 100A, PG-TDSON- 8,Transistor Polarity:N Channel,Continuous Drain Current Id:100A,Drain Source Voltage Vds:80V,On Resistance Rds(on):0.0047ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.8V RoHS Compliant: Yes | 0 |
|
| BSC057N08NS3 G DISTI # 726-BSC057N08NS3G | Infineon Technologies AG | MOSFET N-Ch 80V 100A TDSON-8 OptiMOS 3 RoHS: Compliant | 0 |
|
| BSC057N08NS3GATMA1 DISTI # 726-BSC057N08NS3GATM | Infineon Technologies AG | MOSFET N-Ch 80V 100A TDSON-8 OptiMOS 3 RoHS: Compliant | 0 |
|
| BSC057N08NS3G | Infineon Technologies AG | Power Field-Effect Transistor, 16A I(D), 80V, 0.0057ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant | Europe - 2495 | |
| BSC057N08NS3GATMA1 DISTI # 2432707 | Infineon Technologies AG | MOSFET, N CH, 80V, 100A, TDSON-8 RoHS: Compliant | 0 |
|
| BSC057N08NS3GATMA1 DISTI # 2432707RL | Infineon Technologies AG | MOSFET, N CH, 80V, 100A, TDSON-8 RoHS: Compliant | 0 |
|
| BSC057N08NS3G | Infineon Technologies AG | 80V,100A,N-channel power MOSFET | 40 |
|
| BSC057N08NS3GATMA1 DISTI # 2432707 | Infineon Technologies AG | MOSFET, N CH, 80V, 100A, TDSON-8 RoHS: Compliant | 0 |
|
| 영상 | 부분 # | 설명 |
|---|---|---|
|
Mfr.#: BSC0503NSIATMA1 OMO.#: OMO-BSC0503NSIATMA1 |
MOSFET LV POWER MOS |
|
|
Mfr.#: BSC050N04LS G OMO.#: OMO-BSC050N04LS-G |
MOSFET N-Ch 40V 85A TDSON-8 OptiMOS 3 |
|
|
Mfr.#: BSC054N04NSGATMA1 OMO.#: OMO-BSC054N04NSGATMA1 |
MOSFET N-Ch 40V 81A TDSON-8 OptiMOS 3 |
|
|
Mfr.#: BSC0500NSIATMA1 OMO.#: OMO-BSC0500NSIATMA1 |
MOSFET LV POWER MOS |
|
|
Mfr.#: BSC059N03S G OMO.#: OMO-BSC059N03S-G |
MOSFET N-Ch 30V 17.5A TDSON-8 |
|
|
Mfr.#: BSC057N03MSGATMA1 OMO.#: OMO-BSC057N03MSGATMA1 |
MOSFET LV POWER MOS |
|
Mfr.#: BSC052N03LSATMA1 |
MOSFET N-CH 30V 17A TDSON-8 |
|
Mfr.#: BSC057N08NS3 G OMO.#: OMO-BSC057N08NS3-G-1190 |
MOSFET N-Ch 80V 100A TDSON-8 OptiMOS 3 |
|
|
Mfr.#: BSC059N03SG OMO.#: OMO-BSC059N03SG-1190 |
신규 및 오리지널 |
|
|
Mfr.#: BSC059N03SGINCT OMO.#: OMO-BSC059N03SGINCT-1190 |
신규 및 오리지널 |