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IXFN52N90P

IXFN52N90P
Mfr. #:
IXFN52N90P
제조사:
Littelfuse
설명:
MOSFET PolarHV HiPerFETs 500V-1.2Kv Red Rds
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
IXFN52N90P 데이터 시트
배달:
DHL FedEx Ups TNT EMS
지불:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
추가 정보:
IXFN52N90P 추가 정보
제품 속성
속성 값
제조사:
익시스
제품 카테고리:
MOSFET
RoHS:
Y
기술:
시
장착 스타일:
섀시 마운트
패키지/케이스:
SOT-227-4
트랜지스터 극성:
N-채널
Vds - 드레인 소스 항복 전압:
900 V
Id - 연속 드레인 전류:
43 A
Rds On - 드레인 소스 저항:
160 mOhms
Vgs - 게이트 소스 전압:
30 V
Qg - 게이트 차지:
132 nC
최소 작동 온도:
- 55 C
최대 작동 온도:
+ 150 C
Pd - 전력 손실:
890 W
상표명:
HiPerFET
포장:
튜브
시리즈:
IXFN52N90
유형:
극성 전력 MOSFET
상표:
익시스
순방향 트랜스컨덕턴스 - 최소:
35 S / 20 S
가을 시간:
42 ns
상품 유형:
MOSFET
상승 시간:
80 ns
공장 팩 수량:
10
하위 카테고리:
MOSFET
일반적인 끄기 지연 시간:
95 ns
일반적인 켜기 지연 시간:
63 ns
단위 무게:
1.340411 oz
Tags
IXFN52, IXFN5, IXFN, IXF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***i-Key
MOSFET N-CH 900V 43A SOT227
900V Polar HiPerFET Power MOSFETs
IXYS 900V Polar HiPerFET™ Power MOSFETs are available with drain current ratings from 10.5A to 56A and combine the advantages derived from the IXYS Polar Technology platform and HiPerFET process to provide improved power efficiency and reliability in demanding high-voltage conversion systems that require bus voltage operation of up to 700V. IXYS 900V Polar HiPerFET Power MOSFETs are tailored to minimize on-state resistance while maintaining low gate charge, resulting in a substantial reduction in conduction and switching losses. These IXYS devices feature a fast intrinsic diode for low reverse recovery charge and improved turn-off dV/dt immunity. These high reliability Polar HiPerFET Power MOSFETs are ideal for use in a variety of applications, including switch-mode / resonant-mode power supplies, DC/DC converters, laser drivers, and more.
Electrical Vehicle DC Fast Chargers
DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.
부분 # 제조 설명 재고 가격
IXFN52N90P
DISTI # IXFN52N90P-ND		IXYS CorporationMOSFET N-CH 900V 43A SOT227
RoHS: Compliant
Min Qty: 200
Container: Tube		Limited Supply - Call
    IXFN52N90P
    DISTI # 747-IXFN52N90P    		IXYS CorporationMOSFET PolarHV HiPerFETs 500V-1.2Kv Red Rds
    RoHS: Compliant    		0
    • 1:$35.0300
    • 5:$34.6700
    • 10:$32.3100
    • 25:$30.8600
    • 100:$27.5900
    • 250:$26.3200
    영상 부분 # 설명
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    OMO.#: OMO-IXFN55N50

    		 MOSFET 55 Amps 500V 0.08 Rds
    IXFN50N50

    Mfr.#: IXFN50N50

    OMO.#: OMO-IXFN50N50

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    IXFN50N80

    Mfr.#: IXFN50N80

    OMO.#: OMO-IXFN50N80-1190

    		 신규 및 오리지널
    IXFN50N80Q2

    Mfr.#: IXFN50N80Q2

    OMO.#: OMO-IXFN50N80Q2-IXYS-CORPORATION

    		 MOSFET N-CH 800V 50A SOT-227B
    IXFN55N50F

    Mfr.#: IXFN55N50F

    OMO.#: OMO-IXFN55N50F-IXYS-RF

    		 MOSFET N-CH 500V 55A SOT227B
    IXFN50N120SK

    Mfr.#: IXFN50N120SK

    OMO.#: OMO-IXFN50N120SK-IXYS-CORPORATION

    		 MOSFET N-CH
    IXFN50N50

    Mfr.#: IXFN50N50

    OMO.#: OMO-IXFN50N50-IXYS-CORPORATION

    		 MOSFET 50 Amps 500V 0.1 Rds
    IXFN55N50

    Mfr.#: IXFN55N50

    OMO.#: OMO-IXFN55N50-IXYS-CORPORATION

    		 IGBT Transistors MOSFET 55 Amps 500V 0.08 Rds
    유효성
    재고:
    Available
    주문 시:
    5000
    수량 입력:
    IXFN52N90P의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
    참고 가격(USD)
    수량
    단가
    내선 가격
    1
    US$35.03
    US$35.03
    5
    US$34.67
    US$173.35
    10
    US$32.31
    US$323.10
    25
    US$30.86
    US$771.50
    100
    US$27.59
    US$2 759.00
    250
    US$26.32
    US$6 580.00
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