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IXBR42N170

IXBR42N170
Mfr. #:
IXBR42N170
제조사:
Littelfuse
설명:
IGBT Transistors 57Amps 1700V
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
IXBR42N170 데이터 시트
배달:
DHL FedEx Ups TNT EMS
지불:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IXBR42N170 DatasheetIXBR42N170 Datasheet (P4-P5)
ECAD Model:
제품 속성
속성 값
제조사:
익시스
제품 카테고리:
IGBT 트랜지스터
RoHS:
Y
기술:
시
패키지/케이스:
ISOPLUS 247-3
장착 스타일:
구멍을 통해
시리즈:
IXBR42N170
포장:
튜브
상표:
익시스
상품 유형:
IGBT 트랜지스터
공장 팩 수량:
30
하위 카테고리:
IGBT
상표명:
바이모스펫
단위 무게:
0.186952 oz
Tags
IXB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
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IGBT 1700V 57A 200W ISOPLUS247
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IXBH Series 1700 Vce 40 A 38 ns t(on) Bipolar MOS Transistor - TO-247
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IGBT 1700V 60A 250W TO247
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High Voltage, High Gain Bipolar MOS Transistor
***S
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***el Nordic
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***ical
Trans IGBT Chip N-CH 1700V 50A 250000mW 3-Pin(3+Tab) TO-247AD
***roFlash
Insulated Gate Bipolar Transistor, 50A I(C), 1700V V(BR)CES, N-Channel, TO-247AD
***ark
Igbt, Single, N-Ch, 1.7Kv, 50A, To-247; Dc Collector Current:50A; Collector Emitter Saturation Voltage Vce(On):2.5V; Power Dissipation Pd:250W; Collector Emitter Voltage V(Br)Ceo:1.7Kv; Transistor Case Style:to-247; No. Of Rohs Compliant: Yes
***p One Stop
Trans IGBT Chip N-CH 1200V 57A 200000mW 3-Pin(3+Tab) TO-247AC Tube
***ure Electronics
IRG4PH50S Series 1200 V 57 A N-Channel Standard Speed IGBT - TO-247AC
***ineon SCT
1200V DC-1 kHz (Standard) Discrete IGBT in a TO-247AC package, TO247-3, RoHS
***trelec
IGBT Housing type: TO-247AC Collector-emitter breakdown voltage: 1200 V Collector-emitter saturation voltage: 1.7 V Current release time: 1000 ns Power dissipation: 200 W
***ment14 APAC
IGBT, 1200V, 57A, TO-247AC; Transistor Type:IGBT; DC Collector Current:57A; Collector Emitter Voltage Vces:1.47V; Power Dissipation Pd:200W; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor Case Style:TO-247AC; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Ic Continuous a Max:57A; Current Temperature:25°C; Device Marking:IRG4PH50S; Fall Time Max:638ns; Full Power Rating Temperature:25°C; Package / Case:TO-247AC; Power Dissipation Max:200W; Power Dissipation Pd:200W; Power Dissipation Pd:200W; Pulsed Current Icm:114A; Rise Time:29ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:1.2kV
***p One Stop
Trans IGBT Chip N-CH 1200V 57A 200000mW Automotive 3-Pin(3+Tab) TO-247AC Tube
***ineon SCT
1200V DC-1 kHz (Standard) Discrete Automotive IGBT in a TO-247AC package, TO247-3, RoHS
***ineon
Benefits: Low Vce(on); Optimized for <1KHz switching applications; 150C operating temperature; AEC-Q101 qualified; Lead-free, RoHS compliant | Target Applications: PTC Heater
***nell
IGBT,N CH,1200V,57A,TO247AC; Transistor Type:IGBT; DC Collector Current:57A; Collector Emitter Voltage Vces:1.75V; Power Dissipation Pd:200mW; Collector Emitter Voltage V(br)ceo:1.2kV; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-247AC; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Power Dissipation Max:200W
***(Formerly Allied Electronics)
1200V DC-1 KHZ (STANDARD) DISCRETE IGBT IN A TO-247AC PACKAGE W/ EXETENDED LEAD
***nell
IGBT, SINGLE, N-CH, 1.2KV, 57A, TO247AD; DC Collector Current: 57A; Collector Emitter Saturation Voltage Vce(on): 1.75V; Power Dissipation Pd: 200W; Collector Emitter Voltage V(br)ceo: 1.2kV; Transistor Case Style: TO-247AD;
***ark
Transistor; Transistor Type:IGBT; Transistor Polarity:N Channel; Collector Emitter Voltage, Vces:1200V; Continuous Collector Current, Ic:57A; Collector Emitter Saturation Voltage, Vce(sat):1.47V; Power Dissipation, Pd:200W ;RoHS Compliant: Yes
***ment14 APAC
SINGLE IGBT, 18V, 57A; Transistor Type:I; SINGLE IGBT, 18V, 57A; Transistor Type:IGBT; DC Collector Current:57A; Collector Emitter Voltage Vces:1.2kV; Power Dissipation Pd:200W; Operating Temperature Range:-55°C to +155°C; No. of Pins:3; Continuous Collector Current Ic:57A
부분 # 제조 설명 재고 가격
IXBR42N170
DISTI # IXBR42N170-ND		IXYS CorporationIGBT 1700V 57A 200W ISOPLUS247
RoHS: Compliant
Min Qty: 30
Container: Tube		Temporarily Out of Stock
  • 30:$31.4160
IXBR42N170
DISTI # 747-IXBR42N170		IXYS CorporationIGBT Transistors 57Amps 1700V
RoHS: Compliant		0
  • 30:$28.5600
  • 60:$27.8700
  • 120:$26.5500
  • 270:$24.3600
영상 부분 # 설명
IXBR42N170

Mfr.#: IXBR42N170

OMO.#: OMO-IXBR42N170

 IGBT Transistors 57Amps 1700V
IXBR42N170

Mfr.#: IXBR42N170

OMO.#: OMO-IXBR42N170-IXYS-CORPORATION

 IGBT Transistors 57Amps 1700V
유효성
재고:
Available
주문 시:
5500
수량 입력:
IXBR42N170의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
참고 가격(USD)
수량
단가
내선 가격
30
US$28.56
US$856.80
60
US$27.87
US$1 672.20
120
US$26.55
US$3 186.00
270
US$24.36
US$6 577.20
510
US$23.19
US$11 826.90
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