SI8466EDB-T2-E1

Name: Vishay - SI8466EDB-T2-E1
Brand: Vishay
SKU: OMO-2826835
Price: 1.00 USD
Availability: InStock
Rating: 4.9 (1 reviews)

Mfr. #:: SI8466EDB-T2-E1
제조사:: Vishay
설명:: IGBT Transistors MOSFET 8V 5.4A 1.8W 43mOhms @ 4.5V
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: SI8466EDB-T2-E1 데이터 시트
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ECAD Model:
추가 정보:: SI8466EDB-T2-E1 추가 정보

제품 속성
속성 값

제조사: 비쉐이 실리콘

제품 카테고리: FET - 단일

시리즈: 트렌치FETR

포장: Digi-ReelR 대체 패키징

장착 스타일: SMD/SMT

상표명: MICROFOOT TrenchFET

패키지 케이스: 4-UFBGA, WLCSP

기술: 시

작동 온도: -55°C ~ 150°C (TJ)

장착형: 표면 실장

채널 수: 1 Channel

공급자-장치-패키지: 4-Microfoot

구성: 하나의

FET형: MOSFET N-채널, 금속 산화물

파워맥스: 780mW

트랜지스터형: 1 N-Channel

드레인-소스 전압 Vdss: 8V

입력-커패시턴스-Ciss-Vds: 710pF @ 4V

FET 기능: 기준

Current-Continuous-Drain-Id-25°C: -

Rds-On-Max-Id-Vgs: 43 mOhm @ 2A, 4.5V

Vgs-th-Max-Id: 700mV @ 250μA

Gate-Charge-Qg-Vgs: 13nC @ 4.5V

Pd 전력 손실: 1.8 W

가을철: 20 ns

상승 시간: 30 ns

Vgs 게이트 소스 전압: 700 mV

Id-연속-드레인-전류: 5.4 A

Vds-드레인-소스-고장-전압: 8 V

Vgs-th-Gate-Source-Threshold-Voltage: 700 mV

Rds-On-Drain-Source-Resistance: 43 mOhms

트랜지스터 극성: N-채널

일반 꺼짐 지연 시간: 80 ns

일반 켜기 지연 시간: 20 ns

Qg-Gate-Charge: 13 nC

순방향 트랜스컨덕턴스-최소: 30 S

Tags: SI846, SI84, SI8

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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SI8466EDB-T2-E1 설명

***ical: Trans MOSFET N-CH 8V 5.4A 4-Pin Micro Foot T/R

***ark: N-Channel 8-V (D-S) Mosfet Rohs Compliant: No

***et: N-CH MOSFET MFOOT 1X1 8V 43MOHM @ 4.5V

***i-Key: MOSFET N-CH 8V 3.6A MICROFOOT

SI8466EDB-T2-E1 추가 정보

MicroFoot® Power MOSFETs: Vishay Siliconix MicroFoot® Power MOSFETs offer low on-resistance (RDS(on)) in ultra-small and ultra-thin packages. The devices' compact outlines save PCB space and provide ultrathin profiles to enable slimmer and lighter portable electronics. Low on-resistance translates into lower conduction losses for reduced power consumption and longer battery life between charges. The devices' low on-resistance also means a lower voltage drop across the load switch to prevent unwanted under-voltage lockout.Learn More

Market price

부분 #	제조	설명	재고	가격
SI8466EDB-T2-E1 DISTI # V72:2272_09216592	Vishay Intertechnologies	Trans MOSFET N-CH 8V 5.4A 4-Pin Micro Foot T/R RoHS: Compliant	1632	1000:$0.1651 500:$0.2050 250:$0.2403 100:$0.2430 25:$0.3052 10:$0.3089 1:$0.3788
SI8466EDB-T2-E1 DISTI # SI8466EDB-T2-E1CT-ND	Vishay Siliconix	MOSFET N-CH 8V 3.6A MICROFOOT RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	15174In Stock	1000:$0.2119 500:$0.2742 100:$0.3739 10:$0.4990 1:$0.5900
SI8466EDB-T2-E1 DISTI # SI8466EDB-T2-E1DKR-ND	Vishay Siliconix	MOSFET N-CH 8V 3.6A MICROFOOT RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	15174In Stock	1000:$0.2119 500:$0.2742 100:$0.3739 10:$0.4990 1:$0.5900
SI8466EDB-T2-E1 DISTI # SI8466EDB-T2-E1TR-ND	Vishay Siliconix	MOSFET N-CH 8V 3.6A MICROFOOT RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	15000In Stock	3000:$0.1875
SI8466EDB-T2-E1 DISTI # 25790159	Vishay Intertechnologies	Trans MOSFET N-CH 8V 5.4A 4-Pin Micro Foot T/R RoHS: Compliant	1632	1000:$0.1651 500:$0.2050 250:$0.2403 100:$0.2430 45:$0.3052
SI8466EDB-T2-E1 DISTI # SI8466EDB-T2-E1	Vishay Intertechnologies	Trans MOSFET N-CH 8V 5.4A 4-Pin MICRO FOOT T/R - Tape and Reel (Alt: SI8466EDB-T2-E1) RoHS: Not Compliant Min Qty: 3000 Container: Reel	Americas - 3000	3000:$0.1829 6000:$0.1829 12000:$0.1819 18000:$0.1819 30000:$0.1809
SI8466EDB-T2-E1 DISTI # 67X6880	Vishay Intertechnologies	N-CHANNEL 8-V (D-S) MOSFET	0	1:$0.1900 5000:$0.1850 10000:$0.1710 20000:$0.1600 30000:$0.1490 50000:$0.1420
SI8466EDB-T2-E1 DISTI # 78-SI8466EDB-T2-E1	Vishay Intertechnologies	MOSFET 8V Vds 5V Vgs MICRO FOOT 1 x 1 RoHS: Compliant	5844	1:$0.5300 10:$0.3980 100:$0.2950 500:$0.2430 1000:$0.1880 3000:$0.1710 6000:$0.1600 9000:$0.1490 24000:$0.1430
SI8466EDB-T2-E1 DISTI # C1S803603975991	Vishay Intertechnologies	MOSFETs	1632	250:$0.2403 100:$0.2430 25:$0.3052 10:$0.3089

SI8466EDB-T2-E1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes