SI4202DY-T1-GE3

Mfr. #:: SI4202DY-T1-GE3
제조사:: Vishay / Siliconix
설명:: MOSFET 30V Vds 20V Vgs SO-8
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: SI4202DY-T1-GE3 데이터 시트
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HTML Datasheet:: SI4202DY-T1-GE3 Datasheet SI4202DY-T1-GE3 Datasheet (P4-P6)SI4202DY-T1-GE3 Datasheet (P7-P9)
ECAD Model:
추가 정보:: SI4202DY-T1-GE3 추가 정보

제품 속성
속성 값

제조사:: 비쉐이

제품 카테고리:: MOSFET

RoHS:: E

기술:: 시

장착 스타일:: SMD/SMT

패키지/케이스:: SO-8

채널 수:: 2 Channel

트랜지스터 극성:: N-채널

Vds - 드레인 소스 항복 전압:: 30 V

Id - 연속 드레인 전류:: 12.1 A

Rds On - 드레인 소스 저항:: 14 mOhms

Vgs th - 게이트 소스 임계 전압:: 1 V

Vgs - 게이트 소스 전압:: 20 V

Qg - 게이트 차지:: 17 nC

최소 작동 온도:: - 55 C

최대 작동 온도:: + 150 C

Pd - 전력 손실:: 3.7 W

구성:: 듀얼

채널 모드:: 상승

상표명:: TrenchFET

포장:: 릴

시리즈:: SI4

트랜지스터 유형:: 2 N-Channel

상표:: 비쉐이 / 실리콘닉스

순방향 트랜스컨덕턴스 - 최소:: 33 S

가을 시간:: 8 ns

상품 유형:: MOSFET

상승 시간:: 18 ns

공장 팩 수량:: 2500

하위 카테고리:: MOSFET

일반적인 끄기 지연 시간:: 14 ns

일반적인 켜기 지연 시간:: 11 ns

부품 번호 별칭:: SI4202DY-GE3

단위 무게:: 0.017870 oz

Tags: SI4202DY-T, SI4202D, SI4202, SI420, SI42, SI4

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SI4202DY-T1-GE3 설명

***ied Electronics & Automation: SI4202DY-T1-GE3 Dual N-channel MOSFET Transistor; 12.1 A; 30 V; 8-Pin SOIC

***et Europe: Transistor MOSFET Array Dual N-CH 30V 12.1A 8-Pin SOIC T/R

***ure Electronics: Dual N-Channel 20 V 14 mOhm Surface Mount TrenchFET Power Mosfet - SOIC-8

***ark: Transistor Polarity:n Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:12.1A; On Resistance Rds(On):0.0115Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:1V Rohs Compliant: Yes

***ment14 APAC: MOSFET, NN CH, W/D, 30V, 12.1A, SO8; Transistor Polarity:N Channel; Continuous Drain Current Id:12.1A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0115ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:3.7W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOIC; No. of Pins:8; Continuous Drain Current Id, N Channel:12.1A; Drain Source Voltage Vds, N Channel:30V; Module Configuration:Dual; On Resistance Rds(on), N Channel:0.0115ohm; Power Dissipation Pd:3.7W

SI4202DY-T1-GE3 추가 정보

Si4 MOSFETs: Vishay/Siliconix Si4 MOSFETs are TrenchFET® power MOSFETs used for amplifying electronic signals. These Si4 MOSFETs are available in N-channel, P-channel, and N- & P-channel. The Si4 MOSFETs offer different VGS, VDS, and temperature ranges. The Si4 MOSFETs operate in an enhancement mode and used for switching between electronic signals. These MOSFETs are a surface mount, 100% Rg and UIS tested, and comes in a reel-package.Learn More

Integrated MOSFET Solutions: Vishay Integrated MOSFET Solutions combine components into a single monolithic chip to increase power density, increase efficiency, simplify design, and reduce Bill of Material (BOM) costs. These single- and multi-die MOSFETs integrate features such as Schottky Barrier diodes and ESD protection. These MOSFETs feature low ON-resistance N- and P-channel TrenchFET® technologies and low thermal resistance.

Market price

부분 #	제조	설명	재고	가격
SI4202DY-T1-GE3 DISTI # V36:1790_09215544	Vishay Intertechnologies	Trans MOSFET N-CH 30V 9.7A 8-Pin SOIC N T/R RoHS: Compliant	0	2500000:$0.6545 1250000:$0.6547 250000:$0.6723 25000:$0.7009 2500:$0.7056
SI4202DY-T1-GE3 DISTI # V72:2272_09215544	Vishay Intertechnologies	Trans MOSFET N-CH 30V 9.7A 8-Pin SOIC N T/R RoHS: Compliant	0
SI4202DY-T1-GE3 DISTI # SI4202DY-T1-GE3TR-ND	Vishay Siliconix	MOSFET 2N-CH 30V 12.1A 8SO RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR)	On Order	12500:$0.5376 5000:$0.5586 2500:$0.5880
SI4202DY-T1-GE3 DISTI # SI4202DY-T1-GE3CT-ND	Vishay Siliconix	MOSFET 2N-CH 30V 12.1A 8SO RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	Temporarily Out of Stock	1000:$0.6489 500:$0.8219 100:$0.9950 10:$1.2760 1:$1.4300
SI4202DY-T1-GE3 DISTI # SI4202DY-T1-GE3DKR-ND	Vishay Siliconix	MOSFET 2N-CH 30V 12.1A 8SO RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Temporarily Out of Stock	1000:$0.6489 500:$0.8219 100:$0.9950 10:$1.2760 1:$1.4300
SI4202DY-T1-GE3 DISTI # SI4202DY-T1-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 30V 9.7A 8-Pin SOIC N T/R - Cut TR (SOS) (Alt: SI4202DY-T1-GE3) RoHS: Compliant Min Qty: 1 Container: Cut Tape	Americas - 0	1250:$0.3897 625:$0.4017 313:$0.4144 157:$0.4280 79:$0.4425 40:$0.4581 1:$0.4747
SI4202DY-T1-GE3 DISTI # SI4202DY-T1-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 30V 9.7A 8-Pin SOIC N T/R (Alt: SI4202DY-T1-GE3) RoHS: Compliant Min Qty: 2500 Container: Tape and Reel	Europe - 0	25000:€0.3119 15000:€0.3349 10000:€0.3629 5000:€0.4219 2500:€0.6179
SI4202DY-T1-GE3 DISTI # SI4202DY-T1-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 30V 9.7A 8-Pin SOIC N T/R - Tape and Reel (Alt: SI4202DY-T1-GE3) RoHS: Compliant Min Qty: 2500 Container: Reel	Americas - 0	25000:$0.3339 15000:$0.3439 10000:$0.3529 5000:$0.3679 2500:$0.3799
SI4202DY-T1-GE3 DISTI # SI4202DY-T1-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 30V 9.7A 8-Pin SOIC N T/R (Alt: SI4202DY-T1-GE3) RoHS: Compliant Min Qty: 2500 Container: Tape and Reel	Asia - 0
SI4202DY-T1-GE3 DISTI # 65T1692	Vishay Intertechnologies	MOSFET Transistor, N Channel, 12.1 A, 30 V, 0.0115 ohm, 10 V, 1 V	0	10000:$0.5080 6000:$0.5200 4000:$0.5400 2000:$0.6000 1000:$0.6600 1:$0.6880
SI4202DY-T1-GE3. DISTI # 26AC3327	Vishay Intertechnologies	Transistor Polarity:N Channel,Continuous Drain Current Id:12.1A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.0115ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1V,Power Dissipation Pd:3.7W,No. of Pins:8Pins RoHS Compliant: Yes	0	10000:$0.5080 6000:$0.5200 4000:$0.5400 2000:$0.6000 1000:$0.6600 1:$0.6880
SI4202DY-T1-GE3 DISTI # 70616176	Vishay Siliconix	SI4202DY-T1-GE3 Dual N-channel MOSFET Transistor,12.1 A,30 V,8-Pin SOIC RoHS: Compliant	0	100:$0.8200 500:$0.7400 1500:$0.6600 2500:$0.6400
SI4202DY-T1-GE3 DISTI # 781-SI4202DY-T1-GE3	Vishay Intertechnologies	MOSFET 30V Vds 20V Vgs SO-8 RoHS: Compliant	0	1:$1.3900 10:$1.1500 100:$0.8830 500:$0.7600 1000:$0.5990 2500:$0.5590 5000:$0.5310 10000:$0.5120
SI4202DY-T1-GE3	Vishay Intertechnologies	MOSFET 30V Vds 20V Vgs SO-8 RoHS: Compliant	Americas -

관련 상품

영상	부분 #	설명
	Mfr.#: SI4202DY-T1-GE3 OMO.#: OMO-SI4202DY-T1-GE3	MOSFET 30V Vds 20V Vgs SO-8
	Mfr.#: SI4202DY-T1-GE3-CUT TAPE OMO.#: OMO-SI4202DY-T1-GE3-CUT-TAPE-1190	신규 및 오리지널
	Mfr.#: SI4202DY OMO.#: OMO-SI4202DY-1190	신규 및 오리지널
	Mfr.#: SI4202DY-T1-E3 OMO.#: OMO-SI4202DY-T1-E3-1190	신규 및 오리지널
	Mfr.#: SI4202DY-T1-GE3 OMO.#: OMO-SI4202DY-T1-GE3-VISHAY	MOSFET 2N-CH 30V 12.1A 8SO

유효성

재고:: Available
주문 시:: 3000
수량 입력:

SI4202DY-T1-GE3의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.

참고 가격(USD)

수량
단가
내선 가격

1: ~~US$1.39~~; ~~US$1.39~~

10: ~~US$1.15~~; ~~US$11.50~~

100: ~~US$0.88~~; ~~US$88.30~~

500: ~~US$0.76~~; ~~US$380.00~~

1000: ~~US$0.60~~; ~~US$599.00~~

시작

SI4202DY-T 3
SI4202D 4
SI4202 5
SI420 52
SI42 133
SI4 2994

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SI4202DY-T1-GE3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes