IPB027N10N3GATMA1

Mfr. #:: IPB027N10N3GATMA1
제조사:: Infineon Technologies
설명:: MOSFET N-CH 100V 120A TO263-3
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: IPB027N10N3GATMA1 데이터 시트
배달:: DHL FedEx Ups TNT EMS
지불:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

제품 속성
속성 값

제조사: 인피니언 테크놀로지스

제품 카테고리: 트랜지스터 - FET, MOSFET - 단일

시리즈: XPB027N10

포장: 릴

부분 별칭: G IPB027N10N3 IPB027N10N3GXT SP000506508

단위 무게: 0.068654 oz

장착 스타일: SMD/SMT

상표명: 옵티모스

패키지 케이스: TO-263-3

기술: 시

채널 수: 1 Channel

구성: 하나의

트랜지스터형: 1 N-Channel

Pd 전력 손실: 300 W

최대 작동 온도: + 175 C

최소 작동 온도: - 55 C

가을철: 28 ns

상승 시간: 58 ns

Vgs 게이트 소스 전압: +/- 20 V

Id-연속-드레인-전류: 120 A

Vds-드레인-소스-고장-전압: 100 V

Vgs-th-Gate-Source-Threshold-Voltage: 2.7 V

Rds-On-Drain-Source-Resistance: 2.7 mOhms

트랜지스터 극성: N-채널

일반 꺼짐 지연 시간: 84 ns

일반 켜기 지연 시간: 34 ns

Qg-Gate-Charge: 155 nC

순방향 트랜스컨덕턴스-최소: 188 S

채널 모드: 상승

Tags: IPB027N10N3, IPB027, IPB02, IPB0, IPB

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IPB027N10N3GATMA1 설명

***ure Electronics: Single N-Channel 100 V 4.5 mOhm 206 nC OptiMOS Power Mosfet - D2PAK

***ow.cn: Trans MOSFET N-CH 100V 120A Automotive 3-Pin(2+Tab) D2PAK T/R

***ineon SCT: Infineon's 100V OptiMOS™ power MOSFETs offer superior solutions for high efficiency, high power-density SMPS, PG-TO263-3, RoHS

***ark: Transistor Polarity:n Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:120A; On Resistance Rds(On):0.0023Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.7V Rohs Compliant: Yes

***ineon: The 100V OptiMOS family offers superior solutions for high efficiency, high power-density SMPS. Compared to the next best technology this family achieves a reduction of 30% in both R DS(on) and FOM (figure of merit). | Summary of Features: Excellent switching performance; Worlds lowest R DS(on); Very low Q g and Q gd; Excellent gate charge x R DS(on) product (FOM); RoHS compliant-halogen free; MSL1 rated 2 | Benefits: Environmentally friendly; Increased efficiency; Highest power density; Less paralleling required; Smallest board-space consumption; Easy-to-design products | Target Applications: Synchronous rectification for AC-DC SMPS; Motor control for 48V80V systems (i.e. domestic vehicles, power-tools, trucks); Isolated DC-DC converters (telecom and datacom systems; Or-ing switches and circuit breakers in 48V systems; Class D audio amplifiers; Uninterruptable power supplies (UPS)

Market price

부분 #	제조	설명	재고	가격
IPB027N10N3GATMA1 DISTI # IPB027N10N3GATMA1CT-ND	Infineon Technologies AG	MOSFET N-CH 100V 120A TO263-3 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	2767In Stock	500:$3.7670 100:$4.6520 10:$5.6730 1:$6.3500
IPB027N10N3GATMA1 DISTI # IPB027N10N3GATMA1DKR-ND	Infineon Technologies AG	MOSFET N-CH 100V 120A TO263-3 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	2767In Stock	500:$3.7670 100:$4.6520 10:$5.6730 1:$6.3500
IPB027N10N3GATMA1 DISTI # IPB027N10N3GATMA1TR-ND	Infineon Technologies AG	MOSFET N-CH 100V 120A TO263-3 RoHS: Compliant Min Qty: 1000 Container: Tape & Reel (TR)	2000In Stock	1000:$3.0845
IPB027N10N3GATMA1 DISTI # IPB027N10N3GATMA1	Infineon Technologies AG	Trans MOSFET N-CH 100V 120A 3-Pin TO-263 T/R - Tape and Reel (Alt: IPB027N10N3GATMA1) RoHS: Compliant Min Qty: 1000 Container: Reel	Americas - 0	1000:$2.6900 2000:$2.6900 4000:$2.6900 6000:$2.6900 10000:$2.6900
IPB027N10N3GATMA1 DISTI # SP000506508	Infineon Technologies AG	Trans MOSFET N-CH 100V 120A 3-Pin TO-263 T/R (Alt: SP000506508) RoHS: Compliant Min Qty: 1000 Container: Tape and Reel	Europe - 0	1000:€2.6900 2000:€2.5900 4000:€2.4900 6000:€2.2900 10000:€2.0900
IPB027N10N3GATMA1 DISTI # 85X6013	Infineon Technologies AG	MOSFET, N-CH, 100V, 120A, TO-263-3,Transistor Polarity:N Channel,Continuous Drain Current Id:120A,Drain Source Voltage Vds:100V,On Resistance Rds(on):0.0023ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.7V RoHS Compliant: Yes	156	1:$5.3100 10:$4.5100 25:$4.3100 50:$4.1100 100:$3.9100 250:$3.7100 500:$3.3300
IPB027N10N3GATMA1. DISTI # 27AC6718	Infineon Technologies AG	Transistor Polarity:N Channel,Continuous Drain Current Id:120A,Drain Source Voltage Vds:100V,On Resistance Rds(on):0.0023ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.7V,Power Dissipation Pd:300W,No. of Pins:3Pins RoHS Compliant: Yes	0
IPB027N10N3GATMA1	Infineon Technologies AG	Single N-Channel 100 V 4.5 mOhm 206 nC OptiMOS Power Mosfet - D2PAK RoHS: Not Compliant	2000Reel	1000:$3.0800
IPB027N10N3 G DISTI # 726-IPB027N10N3G	Infineon Technologies AG	MOSFET N-Ch 100V 120A D2PAK-2 OptiMOS 3 RoHS: Compliant	5900	1:$5.3100 10:$4.5100 100:$3.9100 250:$3.7100 500:$3.3300 1000:$2.8100
IPB027N10N3GATMA1 DISTI # 726-IPB027N10N3GATMA	Infineon Technologies AG	MOSFET N-Ch 100V 120A D2PAK-2 OptiMOS 3 RoHS: Compliant	757	1:$5.3100 10:$4.5100 100:$3.9100 250:$3.7100 500:$3.3300 1000:$2.8100
IPB027N10N3GATMA1	Infineon Technologies AG	Power Field-Effect Transistor, 120A I(D), 100V, 0.0027ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB RoHS: Compliant	10	1000:$2.4200 500:$2.5500 100:$2.6500 25:$2.7700 1:$2.9800
IPB027N10N3GATMA1 DISTI # 8259235	Infineon Technologies AG	MOSFET N-CH 120A 100V OPTIMOS3 TO263, PK	184	2:£3.9150 10:£2.9900 50:£2.7250 250:£2.4600 500:£2.2150
IPB027N10N3GATMA1 DISTI # 8259235P	Infineon Technologies AG	MOSFET N-CH 120A 100V OPTIMOS3 TO263, RL	922	10:£2.9900 50:£2.7250 250:£2.4600 500:£2.2150
IPB027N10N3GATMA1 DISTI # 2443379	Infineon Technologies AG	MOSFET, N CH, 100V, 120A, TO-263-3 RoHS: Compliant	154	1:$8.4000 10:$7.1400 100:$6.1900 250:$5.8700 500:$5.2800 1000:$4.4500
IPB027N10N3GATMA1 DISTI # 2443379RL	Infineon Technologies AG	MOSFET, N CH, 100V, 120A, TO-263-3 RoHS: Compliant	0	1:$8.4000 10:$7.1400 100:$6.1900 250:$5.8700 500:$5.2800 1000:$4.4500
IPB027N10N3GATMA1 DISTI # 2443379	Infineon Technologies AG	MOSFET, N CH, 100V, 120A, TO-263-3 RoHS: Compliant	254	1:£3.7700 10:£2.7600 100:£2.4800 250:£2.3000 500:£2.1100
IPB027N10N3GATMA1 DISTI # XSFP00000103332	Infineon Technologies AG	RoHS: Compliant	1346	1000:$4.1100 1346:$3.8500

관련 상품

영상	부분 #	설명
	Mfr.#: IPB027N10N3 G OMO.#: OMO-IPB027N10N3-G	MOSFET N-Ch 100V 120A D2PAK-2 OptiMOS 3
	Mfr.#: IPB027N10N3GATMA1 OMO.#: OMO-IPB027N10N3GATMA1	MOSFET N-Ch 100V 120A D2PAK-2 OptiMOS 3
	Mfr.#: IPB027N10N3G OMO.#: OMO-IPB027N10N3G-1190	MOSFET N-CH 120A 100V OPTIMOS3 TO263, RL
	Mfr.#: IPB027N10N3GATMA1 OMO.#: OMO-IPB027N10N3GATMA1-INFINEON-TECHNOLOGIES	MOSFET N-CH 100V 120A TO263-3
	Mfr.#: IPB027N10N5ATMA1-CUT TAPE OMO.#: OMO-IPB027N10N5ATMA1-CUT-TAPE-1190	신규 및 오리지널
	Mfr.#: IPB027N10N 027N10N OMO.#: OMO-IPB027N10N-027N10N-1190	신규 및 오리지널
	Mfr.#: IPB027N10N3GS OMO.#: OMO-IPB027N10N3GS-1190	신규 및 오리지널
	Mfr.#: IPB027N10N5 OMO.#: OMO-IPB027N10N5-1190	N-CH 100V 120A 2,7mOhm TO263-3
	Mfr.#: IPB027N10N3 G OMO.#: OMO-IPB027N10N3-G-126	IGBT Transistors MOSFET N-Ch 100V 120A D2PAK-2 OptiMOS 3
	Mfr.#: IPB027N10N5ATMA1 OMO.#: OMO-IPB027N10N5ATMA1-INFINEON-TECHNOLOGIES	RF Bipolar Transistors MOSFET N-Ch 100V 120A D2PAK-2

유효성

재고:: Available
주문 시:: 4500
수량 입력:

IPB027N10N3GATMA1의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.

참고 가격(USD)

수량
단가
내선 가격

1: ~~US$3.56~~; ~~US$3.56~~

10: ~~US$3.38~~; ~~US$33.84~~

100: ~~US$3.21~~; ~~US$320.63~~

500: ~~US$3.03~~; ~~US$1 514.05~~

1000: ~~US$2.85~~; ~~US$2 850.00~~

시작

IPB027N10N3 5
IPB027 9
IPB02 68
IPB0 405
IPB 1339

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IPB027N10N3GATMA1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes