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SIR424DP-T1-GE3

SIR424DP-T1-GE3
Mfr. #:
SIR424DP-T1-GE3
제조사:
Vishay
설명:
MOSFET N-CH 20V 30A PPAK SO-8
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
SIR424DP-T1-GE3 데이터 시트
배달:
DHL FedEx Ups TNT EMS
지불:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
추가 정보:
SIR424DP-T1-GE3 추가 정보
제품 속성
속성 값
제조사
비쉐이 실리콘
제품 카테고리
FET - 단일
시리즈
트렌치FETR
포장
Digi-ReelR 대체 패키징
부분 별칭
SIR424DP-GE3
단위 무게
0.017870 oz
장착 스타일
SMD/SMT
패키지 케이스
PowerPAKR SO-8
기술
시
작동 온도
-55°C ~ 150°C (TJ)
장착형
표면 실장
채널 수
1 Channel
공급자-장치-패키지
PowerPAKR SO-8
구성
싱글 쿼드 드레인 트리플 소스
FET형
MOSFET N-채널, 금속 산화물
파워맥스
41.7W
트랜지스터형
1 N-Channel
드레인-소스 전압 Vdss
20V
입력-커패시턴스-Ciss-Vds
1250pF @ 10V
FET 기능
기준
Current-Continuous-Drain-Id-25°C
30A (Tc)
Rds-On-Max-Id-Vgs
5.5 mOhm @ 20A, 10V
Vgs-th-Max-Id
2.5V @ 250μA
Gate-Charge-Qg-Vgs
35nC @ 10V
Pd 전력 손실
4.8 W
최대 작동 온도
+ 150 C
최소 작동 온도
- 55 C
가을철
10 ns
상승 시간
12 ns
Vgs 게이트 소스 전압
20 V
Id-연속-드레인-전류
30 A
Vds-드레인-소스-고장-전압
20 V
Vgs-th-Gate-Source-Threshold-Voltage
2.5 V
Rds-On-Drain-Source-Resistance
4.6 mOhms
트랜지스터 극성
N-채널
일반 꺼짐 지연 시간
23 ns
일반 켜기 지연 시간
18 ns
Qg-Gate-Charge
22 nC
순방향 트랜스컨덕턴스-최소
80 S
채널 모드
상승
Tags
SIR42, SIR4, SIR
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ied Electronics & Automation
SIR424DP-T1-GE3 N-channel MOSFET Transistor; 23 A; 20 V; 8-Pin PowerPAK SO
***ure Electronics
SiR172DP Series N-Channel 20 V 0.0074 Ohm 41.7 W SMT Mosfet - PowerPAK® SO-8
***ark
Transistor Polarity:n Channel; Continuous Drain Current Id:30A; Drain Source Voltage Vds:20V; On Resistance Rds(On):0.0046Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.5V; Power Dissipation Pd:41.7W; No. Of Pins:8Pins Rohs Compliant: Yes
TrenchFET® Gen III Power MOSFET
The Vishay Siliconix TrenchFET® Gen III Power MOSFET family offers the industry's lowest on-resistance and on-resistance times gate charge for a device with this voltage rating in the PowerPAK® SO-8, PowerPAK 1212-8, and SO-8 package types. The Vishay Siliconix TrenchFET Gen III Power MOSFET improves greatly on the performance of the closest competing devices. The lower on-resistance and gate charge of the TrenchFET® Gen III Power MOSFET translate into lower conduction and switching losses. Several devices in the TrenchFET family are also equipped with TurboFET™ technology, which won the EN-Genius award for Best Improvement in Power Devices. Vishay Siliconix TrenchFET devices are used as the low-side MOSFET in synchronous buck converters and in secondary synchronous rectification and OR-ing applications.
부분 # 제조 설명 재고 가격
SIR424DP-T1-GE3
DISTI # V72:2272_07432057		Vishay IntertechnologiesTrans MOSFET N-CH 20V 23.4A 8-Pin PowerPAK SO T/R2810
  • 1000:$0.4094
  • 500:$0.4629
  • 250:$0.5056
  • 100:$0.5225
  • 25:$0.6391
  • 10:$0.6415
  • 1:$0.7429
SIR424DP-T1-GE3
DISTI # SIR424DP-T1-GE3CT-ND		Vishay SiliconixMOSFET N-CH 20V 30A PPAK SO-8
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		2073In Stock
  • 1000:$0.4589
  • 500:$0.5812
  • 100:$0.7495
  • 10:$0.9480
  • 1:$1.0700
SIR424DP-T1-GE3
DISTI # SIR424DP-T1-GE3DKR-ND		Vishay SiliconixMOSFET N-CH 20V 30A PPAK SO-8
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		2073In Stock
  • 1000:$0.4589
  • 500:$0.5812
  • 100:$0.7495
  • 10:$0.9480
  • 1:$1.0700
SIR424DP-T1-GE3
DISTI # SIR424DP-T1-GE3TR-ND		Vishay SiliconixMOSFET N-CH 20V 30A PPAK SO-8
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		On Order
  • 3000:$0.4158
SIR424DP-T1-GE3
DISTI # 27490183		Vishay IntertechnologiesTrans MOSFET N-CH 20V 23.4A 8-Pin PowerPAK SO T/R3000
  • 3000:$0.4382
SIR424DP-T1-GE3
DISTI # 28976247		Vishay IntertechnologiesTrans MOSFET N-CH 20V 23.4A 8-Pin PowerPAK SO T/R2810
  • 1000:$0.4094
  • 500:$0.4629
  • 250:$0.5056
  • 100:$0.5225
  • 25:$0.6391
  • 17:$0.6415
SIR424DP-T1-GE3
DISTI # SIR424DP-T1-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 20V 23.4A 8-Pin PowerPAK SO T/R (Alt: SIR424DP-T1-GE3)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel		Europe - 0
  • 3000:€0.7809
  • 6000:€0.5599
  • 12000:€0.4539
  • 18000:€0.4009
  • 30000:€0.3839
SIR424DP-T1-GE3
DISTI # SIR424DP-T1-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 20V 23.4A 8-Pin PowerPAK SO T/R - Tape and Reel (Alt: SIR424DP-T1-GE3)
RoHS: Compliant
Min Qty: 3000
Container: Reel		Americas - 0
  • 3000:$0.3929
  • 6000:$0.3809
  • 12000:$0.3649
  • 18000:$0.3549
  • 30000:$0.3459
SIR424DP-T1-GE3
DISTI # 70AC6481		Vishay IntertechnologiesTrans MOSFET N-CH 20V 23.4A 8-Pin PowerPAK SO T/R - Product that comes on tape, but is not reeled (Alt: 70AC6481)
RoHS: Compliant
Min Qty: 1
Container: Ammo Pack		Americas - 0
  • 1:$1.0700
  • 25:$0.9480
  • 50:$0.8490
  • 100:$0.7490
  • 250:$0.6650
  • 500:$0.5810
  • 1000:$0.4580
SIR424DP-T1-GE3
DISTI # 70AC6481		Vishay Intertechnologies 3000
  • 1:$1.0700
  • 25:$0.9480
  • 50:$0.8490
  • 100:$0.7490
  • 250:$0.6650
  • 500:$0.5810
  • 1000:$0.4580
SIR424DP-T1-GE3
DISTI # 15R4881		Vishay IntertechnologiesN-CHANNEL 20-V (D-S) MOSFET0
  • 1:$0.4500
  • 3000:$0.4500
SIR424DP-T1-GE3.
DISTI # 30AC0117		Vishay IntertechnologiesN-CHANNEL 20-V (D-S) MOSFET , ROHS COMPLIANT: YES0
  • 1:$0.4500
  • 3000:$0.4500
SIR424DP-T1-GE3
DISTI # 70616563		Vishay SiliconixSIR424DP-T1-GE3 N-channel MOSFET Transistor,23 A,20 V,8-Pin PowerPAK SO
RoHS: Compliant		0
  • 300:$0.5100
  • 600:$0.5000
  • 1500:$0.4900
  • 3000:$0.4800
SIR424DP-T1-GE3
DISTI # 781-SIR424DP-GE3		Vishay IntertechnologiesMOSFET 20V Vds 20V Vgs PowerPAK SO-8
RoHS: Compliant		3647
  • 1:$0.9500
  • 10:$0.7780
  • 100:$0.5970
  • 500:$0.5140
  • 1000:$0.4500
SIR424DP-T1-GE3
DISTI # 2646399		Vishay IntertechnologiesMOSFET, N-CH, 20V, 30A, POWERPAK SO
RoHS: Compliant		0
  • 1:$1.5100
  • 10:$1.2300
  • 100:$0.9450
  • 500:$0.8140
  • 1000:$0.7120
  • 3000:$0.7120
SIR424DP-T1-GE3
DISTI # 2679709		Vishay IntertechnologiesMOSFET, N-CH, 20V, 30A, POWERPAK SO
RoHS: Compliant		0
  • 3000:$0.5700
  • 6000:$0.5510
  • 9000:$0.5410
SIR424DP-T1-GE3
DISTI # 2646399		Vishay IntertechnologiesMOSFET, N-CH, 20V, 30A, POWERPAK SO
RoHS: Compliant		0
  • 5:£0.6120
  • 50:£0.5880
  • 100:£0.4340
  • 500:£0.3410
  • 1500:£0.3260
SIR424DP-T1-GE3Vishay IntertechnologiesMOSFET 20V Vds 20V Vgs PowerPAK SO-8
RoHS: Compliant		Americas - 15000
    SIR424DP-T1-GE3
    DISTI # C1S803603788924    		Vishay IntertechnologiesMOSFETs
    RoHS: Compliant    		3000
    • 3000:$0.5020
    SIR424DP-T1-GE3
    DISTI # C1S803601945880    		Vishay IntertechnologiesMOSFETs
    RoHS: Compliant    		2810
    • 250:$0.5057
    • 100:$0.5227
    • 25:$0.6392
    • 10:$0.6417
    영상 부분 # 설명
    SIR424DP-T1-GE3

    Mfr.#: SIR424DP-T1-GE3

    OMO.#: OMO-SIR424DP-T1-GE3

    		 MOSFET 20V Vds 20V Vgs PowerPAK SO-8
    SIR424DP-T1-E3

    Mfr.#: SIR424DP-T1-E3

    OMO.#: OMO-SIR424DP-T1-E3-1190

    		 신규 및 오리지널
    SIR424DP-T1-GE3

    Mfr.#: SIR424DP-T1-GE3

    OMO.#: OMO-SIR424DP-T1-GE3-VISHAY

    		 MOSFET N-CH 20V 30A PPAK SO-8
    유효성
    재고:
    Available
    주문 시:
    3000
    수량 입력:
    SIR424DP-T1-GE3의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
    참고 가격(USD)
    수량
    단가
    내선 가격
    1
    US$0.51
    US$0.51
    10
    US$0.49
    US$4.88
    100
    US$0.46
    US$46.20
    500
    US$0.44
    US$218.15
    1000
    US$0.41
    US$410.60
    2021년부터 반도체 공급 부족으로 인해 아래 가격은 2021년 이전 정상 가격입니다. 확인을 위해 문의를 보내주세요.
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