IRFHM830DTRPBF

Mfr. #:: IRFHM830DTRPBF
제조사:: Infineon Technologies
설명:: Darlington Transistors MOSFET MOSFT 30V 40A 4.3mOhm 1.1Ohm RG
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: IRFHM830DTRPBF 데이터 시트
배달:: DHL FedEx Ups TNT EMS
지불:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

제품 속성
속성 값

제조사: 국제 정류기

제품 카테고리: 트랜지스터 - FET, MOSFET - 단일

포장: 릴

장착 스타일: SMD/SMT

패키지 케이스: PQFN-8

기술: 시

채널 수: 1 Channel

구성: 싱글 쿼드 드레인 트리플 소스

트랜지스터형: 1 N-Channel

Pd 전력 손실: 2.8 W

최대 작동 온도: + 150 C

최소 작동 온도: - 55 C

가을철: 6.7 ns

상승 시간: 20 ns

Vgs 게이트 소스 전압: 20 V

Id-연속-드레인-전류: 20 A

Vds-드레인-소스-고장-전압: 30 V

Vgs-th-Gate-Source-Threshold-Voltage: 1.8 V

Rds-On-Drain-Source-Resistance: 5.7 mOhms

트랜지스터 극성: N-채널

일반 꺼짐 지연 시간: 9.1 ns

일반 켜기 지연 시간: 9.8 ns

Qg-Gate-Charge: 13 nC

순방향 트랜스컨덕턴스-최소: 69 S

채널 모드: 상승

Tags: IRFHM830DT, IRFHM830D, IRFHM830, IRFHM83, IRFHM8, IRFHM, IRFH, IRF

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IRFHM830DTRPBF 설명

***ineon SCT: 30V Single N-Channel HEXFET Power MOSFET in a 3.3mm X 3.3mm PQFN package, PG-TSDSON-8, RoHS

***(Formerly Allied Electronics): MOSFET, 30V, 40A, 4.3 MOHM, 13 NC QG, 1.1 OHM RG, MONOFETKY, PQFN 3.3X3.3

***ment14 APAC: MOSFET,N CH,SCH DIODE,30V,20A,PQFN33; Transistor Polarity:N Channel; Drain Source Voltage Vds:30V; On Resistance Rds(on):3400µohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:2.8W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:QFN; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:20A; Power Dissipation Pd:2.8W; Voltage Vgs Max:20V

***ineon: Benefits: RoHS Compliant; Low Thermal Resistance to PCB (less than 3.4C/W); Low Profile (less than 1.0 mm); Industry-Standard Pinout; Compatible with Existing Surface Mount Techniques; Schottky intrinsic diode with low forward voltage; Qualified Industrial; Qualified MSL1 | Target Applications: Battery Protection; Isolated Primary Side MOSFETs; Isolated Secondary Side SyncRec MOSFETs; Load Switch High Side; Load Switch Low Side; Point of Load ControlFET

***ure Electronics: Single N-Channel 30 V 6 mOhm 15 nC HEXFET® Power Mosfet - PQFN 3.3 x 3.3 mm

***ineon SCT: 30V Single N-Channel HEXFET Power MOSFET in a 3.3mm X 3.3mm PQFN package, PG-TSDSON-8, RoHS

***Yang: Trans MOSFET N-CH 30V 21A 8-Pin PQFN EP T/R - Tape and Reel

***nell: MOSFET,N CH,DIODE,30V,21A,PQFN33; Transistor Polarity:N Channel; Continuous Drain Current Id:21A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.003ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.8V; Power Dissipation Pd:2.7W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:QFN; No. of Pins:8; SVHC:No SVHC (18-Jun-2012); Current Id Max:21A; Voltage Vgs Max:20V

***ineon: Benefits: RoHS Compliant; Low Profile (less than 1.0 mm); Industry-Standard Pinout; Compatible with Existing Surface Mount Techniques; Qualified Industrial; Qualified MSL1 | Target Applications: Battery Protection; Isolated Primary Side MOSFETs; Isolated Secondary Side SyncRec MOSFETs; Load Switch High Side; Load Switch Low Side; Point of Load ControlFET

***ernational Rectifier: 25V Single N-Channel HEXFET Power MOSFET in a 5mm X 6mm PQFN package

***(Formerly Allied Electronics): MOSFET, 25V, 51A, 6 mOhm, 7 nC Qg, Low Rg, PQFN

***ment14 APAC: MOSFET, N CH, 25V, 51A, PQFN56; Transistor Polarity:N Channel; Continuous Drain Current Id:15A; Drain Source Voltage Vds:25V; On Resistance Rds(on):5mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.8V; Power Dissipation Pd:26W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PQFN; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:51A; Power Dissipation Pd:26W; Voltage Vgs Max:20V

*** Electronics: INFINEON IRLHM630TRPBF MOSFET Transistor, N Channel, 21 A, 30 V, 2.8 mohm, 4.5 V, 800 mV

***ineon SCT: 30V Single N-Channel HEXFET Power MOSFET in a PQFN 3.3 by 3.3 package, PG-TSDSON-8, RoHS

***roFlash: Single N-Channel 20 V 4.5 mOhm 41 nC HEXFET¬Æ Power Mosfet - PQFN 3.3 x 3.3 mm

*** Source Electronics: Battery Operated DC Motor Inverter MOSFET | MOSFET N-CH 30V 21A PQFN

***Yang: Trans MOSFET N-CH 30V 21A 8-Pin PQFN EP T/R - Tape and Reel

***nell: MOSFET,N CH,DIODE,30V,21A,PQFN33; Transistor Polarity:N Channel; Continuous Drain Current Id:21A; Drain Source Voltage Vds:30V; On Resistance Rds(on):2800µohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:800mV; Power Dissipation Pd:2.7W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:QFN; No. of Pins:8; SVHC:No SVHC (18-Jun-2012); Current Id Max:21A; Voltage Vgs Max:12V

***ineon: Benefits: RoHS Compliant; Low RDS(on); Low Thermal Resistance to PCB (less than 3.4C/W); Low Profile (less than 1.0 mm); Industry-Standard Pinout; Compatible with Existing Surface Mount Techniques; Qualified Industrial; Qualified MSL1 | Target Applications: Battery Operated Drive; Battery Protection; Isolated Primary Side MOSFETs; Isolated Secondary Side SyncRec MOSFETs; Load Switch High Side; Load Switch Low Side

***trelec: Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 40 / Drain-Source Voltage (Vds) V = 30 / ON Resistance (Rds(on)) mOhm = 4.5 / Gate-Source Voltage V = 12 / Fall Time ns = 43 / Rise Time ns = 32 / Turn-OFF Delay Time ns = 65 / Turn-ON Delay Time ns = 9.1 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = PQFN / Pins = 8 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Power Dissipation (Pd) W = 37

Market price

부분 #	제조	설명	재고	가격
IRFHM830DTRPBF DISTI # V72:2272_13891074	Infineon Technologies AG	Trans MOSFET N-CH 30V 20A 8-Pin PQFN EP T/R RoHS: Compliant	1703	75000:$0.5489 30000:$0.5491 15000:$0.5499 6000:$0.5558 3000:$0.5616 1000:$0.5633 500:$0.5860 250:$0.6596 100:$0.7208 50:$0.7680 25:$0.8785 10:$0.9017 1:$1.0073
IRFHM830DTRPBF DISTI # IRFHM830DTRPBF-ND	Infineon Technologies AG	MOSFET N-CH 30V 20A PQFN RoHS: Compliant Min Qty: 4000 Container: Tape & Reel (TR)	Limited Supply - Call
IRFHM830DTRPBF DISTI # 26196361	Infineon Technologies AG	Trans MOSFET N-CH 30V 20A 8-Pin PQFN EP T/R RoHS: Compliant	1703	1000:$0.5633 500:$0.5860 250:$0.6596 100:$0.7208 50:$0.7680 25:$0.8785 14:$0.9017
IRFHM830DTRPBF DISTI # 70019948	Infineon Technologies AG	MOSFET,30V,40A,4.3 MOHM,13 NC QG,1.1 OHM RG,MONOFETKY,PQFN 3.3X3.3 RoHS: Compliant	0	4000:$1.5400 8000:$1.5090 20000:$1.4630 40000:$1.4010 100000:$1.3090
IRFHM830DTRPBF DISTI # 942-IRFHM830DTRPBF	Infineon Technologies AG	MOSFET MOSFT 30V 40A 4.3mOhm 1.1Ohm RG RoHS: Compliant	0
IRFHM830DTRPBF	International Rectifier		576	501:$1.0712 232:$1.2010 1:$2.5968
IRFHM830DTRPBF DISTI # 1857345	Infineon Technologies AG	MOSFET,N CH,SCH DIODE,30V,20A,PQFN33 RoHS: Compliant	0	1:$1.9100 10:$1.6100 100:$1.2500 500:$1.1100 1000:$0.9440
IRFHM830DTRPBF DISTI # C1S322000595279	Infineon Technologies AG	Trans MOSFET N-CH 30V 20A 8-Pin PQFN EP T/R RoHS: Compliant	1703	100:$0.7208 50:$0.7680 25:$0.8785 10:$0.9017

관련 상품

영상	부분 #	설명
	Mfr.#: IRFHM8334TRPBF OMO.#: OMO-IRFHM8334TRPBF	MOSFET 30V SGL N-CH HEXFET Pwr MOSFET
	Mfr.#: IRFHM8330TRPBF OMO.#: OMO-IRFHM8330TRPBF	MOSFET 30V SGL N-CH HEXFET Pwr MOSFET
	Mfr.#: IRFHM830TR2PBF OMO.#: OMO-IRFHM830TR2PBF	MOSFET MOSFT 30V 40A 3.8mOhm
	Mfr.#: IRFHM8334TRPBF OMO.#: OMO-IRFHM8334TRPBF-INFINEON-TECHNOLOGIES	MOSFET N-CH 30V 13A 8PQFN
	Mfr.#: IRFHM830DTRPBF. OMO.#: OMO-IRFHM830DTRPBF--1190	신규 및 오리지널
	Mfr.#: IRFHM830TRPBF OMO.#: OMO-IRFHM830TRPBF-INFINEON-TECHNOLOGIES	MOSFET N-CH 30V 21A PQFN
	Mfr.#: IRFHM831TR2PBF OMO.#: OMO-IRFHM831TR2PBF-INFINEON-TECHNOLOGIES	MOSFET N-CH 30V 14A PQFN
	Mfr.#: IRFHM8329TRPBF OMO.#: OMO-IRFHM8329TRPBF-INFINEON-TECHNOLOGIES	MOSFET N-CH 30V 16A PQFN
	Mfr.#: IRFHM8330TRPBF OMO.#: OMO-IRFHM8330TRPBF-INFINEON-TECHNOLOGIES	MOSFET N-CH 30V 16A 8PQFN
	Mfr.#: IRFHM8337TRPBF OMO.#: OMO-IRFHM8337TRPBF-INFINEON-TECHNOLOGIES	MOSFET N-CH 30V 12A 8PQFN

유효성

재고:: Available
주문 시:: 2500
수량 입력:

IRFHM830DTRPBF의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.

참고 가격(USD)

수량
단가
내선 가격

1: ~~US$0.65~~; ~~US$0.65~~

10: ~~US$0.62~~; ~~US$6.22~~

100: ~~US$0.59~~; ~~US$58.91~~

500: ~~US$0.56~~; ~~US$278.20~~

1000: ~~US$0.52~~; ~~US$523.70~~

2021년부터 반도체 공급 부족으로 인해 아래 가격은 2021년 이전 정상 가격입니다. 확인을 위해 문의를 보내주세요.

시작

IRFHM830DT 3
IRFHM830D 4
IRFHM830 7
IRFHM83 20
IRFHM8 24
IRFHM 38
IRFH 278
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IRFHM830DTRPBF

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes