S29GL512S10TFI020

S29GL512S10TFI020
Mfr. #:
S29GL512S10TFI020
제조사:
Cypress Semiconductor
설명:
IC FLASH 512M PARALLEL 56TSOP
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
S29GL512S10TFI020 데이터 시트
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S29GL512S10TFI020 추가 정보 S29GL512S10TFI020 Product Details
제품 속성
속성 값
제조사
스팬션
제품 카테고리
메모리
시리즈
GL-S
포장
쟁반
장착 스타일
SMD/SMT
작동 온도 범위
- 40 C to + 85 C
패키지 케이스
TSOP-56
작동 온도
-40°C ~ 85°C (TA)
상호 작용
평행 한
전압 공급
2.7 V ~ 3.6 V
공급자-장치-패키지
56-TSOP
메모리 크기
512M (32M x 16)
메모리형
플래시 - NOR
속도
100ns
건축학
부문
포맷 메모리
플래시
인터페이스 유형
평행 한
조직
32 M x 16
공급 전류 최대
60 mA
데이터 버스 너비
16 bit
공급 전압 최대
3.6 V
공급 전압 최소
2.7 V
타이밍 유형
비동기
Tags
S29GL512S10TFI02, S29GL512S10TFI0, S29GL512S10TFI, S29GL512S10T, S29GL512S10, S29GL512S, S29GL5, S29GL, S29G, S29
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***
Parallel NOR Flash Memory, 512 Mbit Density, 100 ns Initial Access Time, TSOP-56, RoHS
***et
NOR Flash Parallel 3V/3.3V 512Mbit 32M x 16bit 100ns 56-Pin TSOP Tray
***ure Electronics
GL-S Series 512 Mbit (32 M x 16) 3.6 V 100 ns Non-Volatile Memory - TSOP-56
***ment14 APAC
MEMORY, FLASH, 512MB, 3V, 56TSOP; Memory Size:512Mbit; Interface Type:CFI; Access Time:100ns; Supply Voltage Range:2.7V to 3.6V; Memory Case Style:TSOP; No. of Pins:56; Operating Temperature Range:-40°C to +85°C; MSL:MSL 3 - 168 hours; SVHC:No SVHC (20-Jun-2011); IC Generic Number:S29GL512S
MirrorBit® NOR GL Flash Memory Device - EXPANSION
Cypress has expanded it's offering of MirrorBit® NOR GL Flash Memory Devices to include the 100ns access speeds. This additional offering of Cypress MirrorBit® NOR GL Flash Memory now provide the fastest access times in the high-density versions available. MirrorBit® NOR GL Flash Memory Devices are ideal for today's embedded applications that require higher density, better performance, and lower power consumption.Learn MoreCypress MirrorBit® GL NOR Flash family is optimized for the voltage, density, cost-per-bit, reliability, performance, and scalability needs of a wide variety of embedded applications. With densities from 32MB to 2GB, each MirrorBit® NOR GL Flash Memory Device requires only a single 3.0V power supply for read and write functions and is entirely command set compatible with the JEDEC Flash standards. The Cypress MirrorBit® GL Flash Memory Device family supports Cypress' Universal Footprint, which provides one footprint across all densities, product families, and process technologies, allowing manufacturers to design a single platform and simply scale Flash memory capacity up or down, depending on the features and functionality of the target end system.View the entire MirrorBit® NOR GL Series
MirrorBit® NOR GL Flash Memory Device
Cypress MirrorBit® GL NOR Flash family is optimized for voltage, density, cost-per-bit, reliability, performance, and scalability needs. With densities from 32MB-2GB, each MirrorBit® Memory Device requires only a single 3.0V power supply for read and write functions. The entire command set compatible with the JEDEC Flash standards.
부분 # 제조 설명 재고 가격
S29GL512S10TFI020
DISTI # 1274-1036-ND
Cypress SemiconductorIC FLASH 512M PARALLEL 56TSOP
RoHS: Compliant
Min Qty: 1
Container: Tray
2273In Stock
  • 1001:$5.9535
  • 546:$6.1696
  • 273:$6.4871
  • 182:$6.6899
  • 91:$7.4574
  • 25:$7.4836
  • 10:$7.6430
  • 1:$8.3000
S29GL512S10TFI020
DISTI # C1S159300542654
Cypress SemiconductorNOR Flash Parallel 3V/3.3V 512M-bit 32M x 16 100ns 56-Pin TSOP Tray
RoHS: Compliant
177
  • 50:$10.9000
  • 10:$11.8000
  • 5:$12.6000
  • 1:$16.4000
S29GL512S10TFI020
DISTI # 48T7583
Cypress SemiconductorFLASH MEMORY, 512MBIT, 100NS, 56-TSOP,Flash Memory Type:Parallel NOR,Memory Size:512Mbit,Flash Memory Configuration:32M x 16bit,IC Interface Type:Parallel,Memory Case Style:TSOP,No. of Pins:56Pins,Clock Frequency:- RoHS Compliant: Yes0
  • 1:$7.1200
  • 10:$6.5600
  • 25:$6.4700
  • 50:$6.4000
  • 100:$5.7400
  • 250:$5.5700
S29GL512S10TFI020
DISTI # 797-S29GL512S10TFI02
Cypress SemiconductorNOR Flash 512Mb 3V 100ns Parallel NOR Flash
RoHS: Compliant
672
  • 1:$7.1200
  • 10:$6.5600
  • 25:$6.4700
  • 50:$6.4000
  • 100:$5.7400
  • 250:$5.5700
S29GL512S10TFI020SpansionFLASH, 64MX8, 100NS, PDSO561
  • 1:$19.4850
S29GL512S10TFI020Spansion 910
    S29GL512S10TFI020
    DISTI # 1972438
    Cypress SemiconductorMEMORY, FLASH, 512MB, 3V, 56TSOP
    RoHS: Compliant
    0
    • 1:$11.2700
    • 10:$10.3900
    • 25:$10.2400
    • 50:$10.1300
    • 100:$9.0900
    • 250:$8.8600
    영상 부분 # 설명
    S29GL512S11TFV010

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    Mfr.#: S29GL512T13DHNV10

    OMO.#: OMO-S29GL512T13DHNV10

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    S29GL512S11DHA013

    Mfr.#: S29GL512S11DHA013

    OMO.#: OMO-S29GL512S11DHA013

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    S29GL512P11TFI010D

    Mfr.#: S29GL512P11TFI010D

    OMO.#: OMO-S29GL512P11TFI010D-1151

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    S29GL512S12TFBV20

    Mfr.#: S29GL512S12TFBV20

    OMO.#: OMO-S29GL512S12TFBV20-CYPRESS-SEMICONDUCTOR

    Flash Memory 512 MBIT, 3V, 120NS, 56-LEAD TSOP, PAGE MODE FLASH MEMORY FEATURING 65 NM MIRRORBIT PROCESS TECHNOLOGY, LOWEST ADDRESS SECTOR PROTECTED
    S29GL512S11GHB020

    Mfr.#: S29GL512S11GHB020

    OMO.#: OMO-S29GL512S11GHB020-CYPRESS-SEMICONDUCTOR

    IC FLASH 512M PARALLEL 56BGA GL-S
    S29GL512S11DHB013

    Mfr.#: S29GL512S11DHB013

    OMO.#: OMO-S29GL512S11DHB013-CYPRESS-SEMICONDUCTOR

    IC FLASH 512M PARALLEL 64FBGA Automotive, AEC-Q100, GL-S
    S29GL512N11TF101

    Mfr.#: S29GL512N11TF101

    OMO.#: OMO-S29GL512N11TF101-1190

    신규 및 오리지널
    S29GL512S10TFI010-

    Mfr.#: S29GL512S10TFI010-

    OMO.#: OMO-S29GL512S10TFI010--1190

    신규 및 오리지널
    유효성
    재고:
    Available
    주문 시:
    5000
    수량 입력:
    S29GL512S10TFI020의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
    참고 가격(USD)
    수량
    단가
    내선 가격
    1
    US$8.36
    US$8.36
    10
    US$7.94
    US$79.37
    100
    US$7.52
    US$751.95
    500
    US$7.10
    US$3 550.90
    1000
    US$6.68
    US$6 684.00
    2021년부터 반도체 공급 부족으로 인해 아래 가격은 2021년 이전 정상 가격입니다. 확인을 위해 문의를 보내주세요.
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