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SISH110DN-T1-GE3

SISH110DN-T1-GE3
Mfr. #:
SISH110DN-T1-GE3
제조사:
Vishay / Siliconix
설명:
MOSFET 20V Vds 20V Vgs PowerPAK 1212-8
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
SISH110DN-T1-GE3 데이터 시트
배달:
DHL FedEx Ups TNT EMS
지불:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
추가 정보:
SISH110DN-T1-GE3 추가 정보
제품 속성
속성 값
제조사:
비쉐이
제품 카테고리:
MOSFET
RoHS:
Y
기술:
시
장착 스타일:
SMD/SMT
패키지/케이스:
PowerPAK-1212-8SH
채널 수:
1 Channel
트랜지스터 극성:
N-채널
Vds - 드레인 소스 항복 전압:
20 V
Id - 연속 드레인 전류:
21.1 A
Rds On - 드레인 소스 저항:
5.3 mOhms
Vgs th - 게이트 소스 임계 전압:
1.5 V
Vgs - 게이트 소스 전압:
20 V
Qg - 게이트 차지:
21 nC
최소 작동 온도:
- 55 C
최대 작동 온도:
+ 150 C
Pd - 전력 손실:
3.8 W
구성:
하나의
채널 모드:
상승
상표명:
TrenchFET, PowerPAK
포장:
릴
시리즈:
SIS
트랜지스터 유형:
1 N-Channel TrenchFET Power MOSFET
상표:
비쉐이 / 실리콘닉스
순방향 트랜스컨덕턴스 - 최소:
71 S
가을 시간:
10 ns
상품 유형:
MOSFET
상승 시간:
10 ns
공장 팩 수량:
3000
하위 카테고리:
MOSFET
일반적인 끄기 지연 시간:
36 ns
일반적인 켜기 지연 시간:
12 ns
Tags
SISH11, SISH1, SISH, SIS
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
TrenchFET Gen IV MOSFETs
Vishay / Siliconix TrenchFET® Gen IV MOSFETs are next-generation TrenchFET® family of power MOSFETs. These new devices utilize a new high-density design and the SiR182DP, SiR186DP, and SiSS26DN. The TrenchFET Gen IV MOSFETs offer industry-low on-resistance and low total gate charge in the PowerPAK® SO-8 and 1212-8S packages. These TrenchFET Gen IV MOSFETs feature extremely low RDS(on) that translates to lower conduction losses for reduced power consumption. The TrenchFET MOSFETs also come with space-saving PowerPAK® 1212-8 packages with similar efficiency with a third of its size. Typical applications include high power DC/DC converters, synchronous rectification, solar micro-inverters, and motor drive switch.
부분 # 제조 설명 재고 가격
SISH110DN-T1-GE3
DISTI # V99:2348_22712066		Vishay IntertechnologiesN-Channel 20 V (D-S) Fast Switching MOSFET PowerPAK 1212-8SH 300M , 5.3 m @ 10V m @ 7.5V 7.8 m @ 4.56000
  • 3000:$0.6094
  • 1000:$0.6213
  • 500:$0.7945
  • 100:$0.9461
  • 10:$1.2668
  • 1:$1.6428
SISH110DN-T1-GE3
DISTI # SISH110DN-T1-GE3CT-ND		Vishay SiliconixMOSFET N-CH 20V PPAK 1212-8SH
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		6050In Stock
  • 1000:$0.7300
  • 500:$0.9247
  • 100:$1.1194
  • 10:$1.4360
  • 1:$1.6100
SISH110DN-T1-GE3
DISTI # SISH110DN-T1-GE3DKR-ND		Vishay SiliconixMOSFET N-CH 20V PPAK 1212-8SH
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		6050In Stock
  • 1000:$0.7300
  • 500:$0.9247
  • 100:$1.1194
  • 10:$1.4360
  • 1:$1.6100
SISH110DN-T1-GE3
DISTI # SISH110DN-T1-GE3TR-ND		Vishay SiliconixMOSFET N-CH 20V PPAK 1212-8SH
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		6000In Stock
  • 15000:$0.6048
  • 6000:$0.6284
  • 3000:$0.6615
SISH110DN-T1-GE3
DISTI # 31579465		Vishay IntertechnologiesN-Channel 20 V (D-S) Fast Switching MOSFET PowerPAK 1212-8SH 300M , 5.3 m @ 10V m @ 7.5V 7.8 m @ 4.56000
  • 3000:$0.6094
  • 1000:$0.6213
  • 500:$0.7945
  • 100:$0.9461
  • 11:$1.2668
SISH110DN-T1-GE3
DISTI # SISH110DN-T1-GE3		Vishay IntertechnologiesN-CH 20-V (D-S) FAST SWITCHING MOSFE - Tape and Reel (Alt: SISH110DN-T1-GE3)
RoHS: Compliant
Min Qty: 6000
Container: Reel		Americas - 0
  • 60000:$0.5759
  • 30000:$0.5919
  • 18000:$0.6089
  • 12000:$0.6349
  • 6000:$0.6549
SISH110DN-T1-GE3
DISTI # 99AC9581		Vishay IntertechnologiesMOSFET, N-CH, 20V, 13.5A, 150DEG C, 1.5W,Transistor Polarity:N Channel,Continuous Drain Current Id:13.5A,Drain Source Voltage Vds:20V,On Resistance Rds(on):0.0044ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.5V,RoHS Compliant: Yes45
  • 500:$0.8650
  • 250:$0.9350
  • 100:$1.0000
  • 50:$1.1000
  • 25:$1.2000
  • 10:$1.3000
  • 1:$1.5900
SISH110DN-T1-GE3
DISTI # 81AC3492		Vishay IntertechnologiesN-CH 20-V (D-S) FAST SWITCHING MOSFE0
  • 10000:$0.5720
  • 6000:$0.5850
  • 4000:$0.6080
  • 2000:$0.6750
  • 1000:$0.7430
  • 1:$0.7740
SISH110DN-T1-GE3
DISTI # 78-SISH110DN-T1-GE3		Vishay IntertechnologiesMOSFET 20V Vds 20V Vgs PowerPAK 1212-8
RoHS: Compliant		6000
  • 1:$1.5700
  • 10:$1.2900
  • 100:$0.9940
  • 500:$0.8550
  • 1000:$0.6740
  • 3000:$0.6290
  • 6000:$0.5980
  • 9000:$0.5760
SISH110DN-T1-GE3
DISTI # 3019127		Vishay IntertechnologiesMOSFET, N-CH, 20V, 13.5A, 150DEG C, 1.5W45
  • 500:£0.6210
  • 250:£0.6710
  • 100:£0.7210
  • 10:£0.9880
  • 1:£1.3000
SISH110DN-T1-GE3
DISTI # 3019127		Vishay IntertechnologiesMOSFET, N-CH, 20V, 13.5A, 150DEG C, 1.5W
RoHS: Compliant		45
  • 5000:$0.7440
  • 1000:$0.7490
  • 500:$0.9250
  • 250:$1.0200
  • 100:$1.1200
  • 25:$1.4200
  • 5:$1.5600
영상 부분 # 설명
USB5734/MR

Mfr.#: USB5734/MR

OMO.#: OMO-USB5734-MR

 USB Interface IC Hi-Speed USB Cont Hub w/ Bridging
USB5734/MR

Mfr.#: USB5734/MR

OMO.#: OMO-USB5734-MR-MICROCHIP-TECHNOLOGY

 USB Interface IC Hi-Speed USB Cont Hub w/ Bridging
유효성
재고:
Available
주문 시:
1988
수량 입력:
SISH110DN-T1-GE3의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
참고 가격(USD)
수량
단가
내선 가격
1
US$1.57
US$1.57
10
US$1.29
US$12.90
100
US$0.99
US$99.40
500
US$0.86
US$427.50
1000
US$0.67
US$674.00
2021년부터 반도체 공급 부족으로 인해 아래 가격은 2021년 이전 정상 가격입니다. 확인을 위해 문의를 보내주세요.
시작
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