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IKA08N65F5XKSA1

IKA08N65F5XKSA1
Mfr. #:
IKA08N65F5XKSA1
제조사:
Infineon Technologies
설명:
IGBT Transistors IGBT PRODUCTS
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
IKA08N65F5XKSA1 데이터 시트
배달:
DHL FedEx Ups TNT EMS
지불:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
추가 정보:
IKA08N65F5XKSA1 추가 정보
제품 속성
속성 값
제조사:
인피니언
제품 카테고리:
IGBT 트랜지스터
RoHS:
Y
기술:
시
패키지/케이스:
TO-220FP-3
장착 스타일:
구멍을 통해
구성:
하나의
컬렉터-이미터 전압 VCEO 최대:
650 V
수집기-이미터 포화 전압:
1.6 V
최대 게이트 이미터 전압:
20 V
25C에서 연속 수집기 전류:
10.8 A
Pd - 전력 손실:
31.2 W
최소 작동 온도:
- 40 C
최대 작동 온도:
+ 175 C
시리즈:
TRENCHSTOP 5 F5
포장:
튜브
상표:
인피니언 테크놀로지스
게이트-이미터 누설 전류:
100 nA
상품 유형:
IGBT 트랜지스터
공장 팩 수량:
500
하위 카테고리:
IGBT
상표명:
트렌치스톱
부품 번호 별칭:
IKA08N65F5 SP000973414
단위 무게:
0.211644 oz
Tags
IKA08N65F, IKA08, IKA0, IKA
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans IGBT Chip N-CH 650V 10.8A 3-Pin(3+Tab) TO-220FP Tube
***p One Stop Japan
Trans IGBT Chip N-CH 650V 10.8A 3-Pin(3+Tab) TO-220FP
***et Europe
Trans IGBT Chip N-CH 650V 10.8A 3-Pin TO-220 Tube
***ark
Igbt Single Transistor, 8 A, 1.6 V, 31.2 W, 650 V, To-220, 3
***i-Key
IGBT 650V 10.8A 31.2W TO220-3
***ronik
IGBT 650V 8A 1,6V TO220FP-3
***ment14 APAC
IGBT, 650V, 8A, TO220-3
***ukat
650V 10,8A 31,2W TO220-Fullpak
***nell
IGBT, 650V, 8A, TO220-3; Corrente di Collettore CC:8A; Tensione Saturaz Collettore-Emettitore Vce(on):1.6V; Dissipazione di Potenza Pd:31.2W; Tensione Collettore-Emettitore V(br)ceo:650V; Modello Case Transistor:TO-220; No. di Pin:3Pin; Temperatura di Esercizio Max:175°C; Gamma Prodotti:TRENCHSTOP 5 Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):-; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018); Temperatura di Esercizio Min:-40°C; Tipo di Transistor:IGBT
***ineon
Infineons new TRENCHSTOP5 IGBT technology redefines Best-in-class IGBT by providing unmatched performance in terms of efficiency for hard switching applications. The new family is a major breakthrough in IGBT innovation to match the markets high efficiency demands of tomorrow. | Summary of Features: 650V breakthrough voltage; Compared to Infineons best-in-class HighSpeed 3 family; Factor 2.5 lower Q g; Factor 2 reduction in switching losses; 200mV reduction in V CE(sat); Co-packed with Infineons new Rapid Si-diode technology; Low C OES/E OSS; Mild positive temperature coefficient V CE(sat); Temperature stability of V f | Benefits: Best-in-class efficiency, resulting in lower junction and case temperature leading to higher device reliability; 50V increase in the bus voltage possible without compromising reliability; Higher power density design | Target Applications: Uninterruptible Power Supplies; Welding
TRENCHSTOP™ 5 IGBTs
Infineon TRENCHSTOP™ 5 IGBTs are the next generation of thin wafer IGBT (Insulated Gate Bipolar Transistor) that feature significantly lower conduction and switching losses compared to currently leading solutions. TRENCHSTOP 5 is designed for applications where switching >10kHz. The wafer thickness has been reduced by >25%, which enables a dramatic improvement in both switching and conduction losses, while providing a breakthrough voltage of 650V. This quantum leap in efficiency opens up new opportunities for designers to explore.
TRENCHSTOP™ 5 F5 Discrete IGBTs
Infineon TRENCHSTOP™ 5 F5 Discrete IGBTs are optimized for switching >60kHz to deliver optimum efficiency, bridging the gap between MOSFETs and IGBTs. The F5 series features significantly lower switching losses compared to currently leading solutions. Targeting topologies are boost stages, PFC (AC-DC) stages and high voltage DC-DC topologies commonly found in applications like Uninterruptible Power Supplies, UPS, Inverterized Welding Machines and Switch Mode Power Supplies (SMPS). The 650V TRENCHSTOP™ 5 F5 IGBTs are targeted for low inductance designs in combination with SiC diodes to offer 1% higher efficiency compared to 650V TRENCHSTOP™ 5 H5 family. The F5 products require higher design in effort, but rewards are higher.
부분 # 제조 설명 재고 가격
IKA08N65F5XKSA1
DISTI # IKA08N65F5XKSA1-ND		Infineon Technologies AGIGBT 650V 10.8A 31.2W TO220-3
RoHS: Compliant
Min Qty: 1
Container: Tube		416In Stock
  • 1000:$0.8803
  • 500:$1.0624
  • 100:$1.2931
  • 10:$1.6090
  • 1:$1.7900
IKA08N65F5XKSA1
DISTI # IKA08N65F5XKSA1		Infineon Technologies AGTrans IGBT Chip N-CH 650V 10.8A 3-Pin TO-220 Tube - Rail/Tube (Alt: IKA08N65F5XKSA1)
RoHS: Compliant
Min Qty: 500
Container: Tube		Americas - 0
  • 500:$1.0199
  • 1000:$0.9829
  • 2000:$0.9469
  • 3000:$0.9159
  • 5000:$0.8989
IKA08N65F5XKSA1
DISTI # SP000973414		Infineon Technologies AGTrans IGBT Chip N-CH 650V 10.8A 3-Pin TO-220 Tube (Alt: SP000973414)
RoHS: Compliant
Min Qty: 1
Container: Tube		Europe - 0
  • 1:€1.1109
  • 10:€1.0099
  • 25:€0.9259
  • 50:€0.8879
  • 100:€0.8539
  • 500:€0.8229
  • 1000:€0.7929
IKA08N65F5XKSA1
DISTI # 726-IKA08N65F5XKSA1		Infineon Technologies AGIGBT Transistors IGBT PRODUCTS
RoHS: Compliant		387
  • 1:$1.7100
  • 10:$1.4500
  • 100:$1.1600
  • 500:$1.0200
  • 1000:$0.8390
  • 2500:$0.7810
  • 5000:$0.7520
  • 10000:$0.7230
IKA08N65F5
DISTI # 726-IKA08N65F5-ES		Infineon Technologies AGIGBT Transistors ENGINEERING SAMPLES TRENCHSTOP-5 IGBT
RoHS: Compliant		489
  • 1:$1.7400
  • 10:$1.4800
  • 100:$1.1900
  • 500:$1.0400
  • 1000:$0.8600
  • 2500:$0.8000
  • 5000:$0.7700
  • 10000:$0.7400
IKA08N65F5XKSA1Infineon Technologies AGInsulated Gate Bipolar Transistor, 10.8A I(C), 650V V(BR)CES, N-Channel
RoHS: Compliant		500
  • 1000:$0.9400
  • 500:$0.9900
  • 100:$1.0300
  • 25:$1.0800
  • 1:$1.1600
IKA08N65F5XKSA1
DISTI # IKA08N65F5		Infineon Technologies AG650V 10,8A 31,2W TO220-Fullpak
RoHS: Compliant		345
  • 1:€4.9400
  • 10:€1.9400
  • 50:€0.9400
  • 100:€0.8600
IKA08N65F5XKSA1
DISTI # 2363281		Infineon Technologies AGIGBT, 650V, 8A, TO220-3
RoHS: Compliant		0
  • 5:£1.1900
  • 25:£1.0900
  • 100:£0.8780
  • 250:£0.8250
  • 500:£0.7720
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유효성
재고:
385
주문 시:
2368
수량 입력:
IKA08N65F5XKSA1의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
참고 가격(USD)
수량
단가
내선 가격
1
US$2.08
US$2.08
10
US$1.77
US$17.70
100
US$1.41
US$141.00
500
US$1.24
US$620.00
1000
US$1.02
US$1 020.00
2021년부터 반도체 공급 부족으로 인해 아래 가격은 2021년 이전 정상 가격입니다. 확인을 위해 문의를 보내주세요.
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