NGTB40N60FL2WG

NGTB40N60FL2WG
Mfr. #:
NGTB40N60FL2WG
제조사:
ON Semiconductor
설명:
IGBT Transistors 600V/40A FAST IGBT FSII T
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
NGTB40N60FL2WG 데이터 시트
배달:
DHL FedEx Ups TNT EMS
지불:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
NGTB40N60FL2WG DatasheetNGTB40N60FL2WG Datasheet (P4-P6)NGTB40N60FL2WG Datasheet (P7-P9)NGTB40N60FL2WG Datasheet (P10)
ECAD Model:
추가 정보:
NGTB40N60FL2WG 추가 정보
제품 속성
속성 값
제조사:
온세미컨덕터
제품 카테고리:
IGBT 트랜지스터
RoHS:
Y
기술:
패키지/케이스:
TO-247-3
장착 스타일:
구멍을 통해
구성:
하나의
컬렉터-이미터 전압 VCEO 최대:
600 V
수집기-이미터 포화 전압:
1.85 V
최대 게이트 이미터 전압:
20 V
25C에서 연속 수집기 전류:
80 A
Pd - 전력 손실:
366 W
최소 작동 온도:
- 55 C
최대 작동 온도:
+ 175 C
포장:
튜브
연속 수집가 현재 IC 최대:
80 A
상표:
온세미컨덕터
게이트-이미터 누설 전류:
200 nA
상품 유형:
IGBT 트랜지스터
공장 팩 수량:
30
하위 카테고리:
IGBT
단위 무게:
1.340411 oz
Tags
NGTB40N60, NGTB40N6, NGTB40, NGTB4, NGTB, NGT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans IGBT Chip N-CH 600V 80A 366000mW 3-Pin(3+Tab) TO-247 Tube
***ied Electronics & Automation
NGTB40N60FL2WG; IGBT Transistor; 80 A 600 V; 1MHz; 3-Pin TO-247
***nell
600V/40A FAST IGBT FSII T; DC Collector Current: 80A; Collector Emitter Saturation Voltage Vce(on): 1.7V; Power Dissipation Pd: 366W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-247; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (27-Jun-2018)
Field Stop II Series IGBTs
ON Semiconductor's Field Stop II Series IGBTs feature a robust and cost effective Field Stop II Trench construction, and provides superior performance, offering both low on state voltage and minimal switching loss. Features include extremely efficient trench, short circuit capable, available in rates of 15A to 75A, reduction in switching losses, and reduction in input capacitance. These IGBTs are well suited for UPS, solar, half bridge resonant, or demanding switching applications. Incorporated into each device is a soft and fast co−packaged free wheeling diode with a low forward voltage.Learn More
부분 # 제조 설명 재고 가격
NGTB40N60FL2WG
DISTI # V99:2348_07301290
ON SemiconductorTrans IGBT Chip N-CH 600V 80A 3-Pin(3+Tab) TO-247 Tube
RoHS: Compliant
8
  • 2500:$1.2715
  • 1000:$1.2872
  • 500:$1.3381
  • 250:$1.3675
  • 100:$1.3812
  • 10:$1.4161
  • 1:$2.7717
NGTB40N60FL2WG
DISTI # NGTB40N60FL2WGOS-ND
ON SemiconductorIGBT 600V 80A 366W TO247
RoHS: Compliant
Min Qty: 90
Container: Tube
On Order
  • 90:$4.6842
NGTB40N60FL2WG
DISTI # 30243099
ON SemiconductorTrans IGBT Chip N-CH 600V 80A 3-Pin(3+Tab) TO-247 Tube
RoHS: Compliant
8
  • 3:$2.7717
NGTB40N60FL2WG
DISTI # NGTB40N60FL2WG
ON SemiconductorTrans IGBT Chip N-CH 600V 80A 3-Pin TO-247 Tube (Alt: NGTB40N60FL2WG)
RoHS: Compliant
Min Qty: 180
Container: Tube
Asia - 0
    NGTB40N60FL2WG
    DISTI # NGTB40N60FL2WG
    ON SemiconductorTrans IGBT Chip N-CH 600V 80A 3-Pin TO-247 Tube (Alt: NGTB40N60FL2WG)
    RoHS: Compliant
    Min Qty: 1
    Container: Tube
    Europe - 0
    • 1:€4.4800
    • 10:€3.4400
    • 100:€2.9800
    • 250:€2.8300
    • 500:€2.5500
    NGTB40N60FL2WG
    DISTI # NGTB40N60FL2WG
    ON SemiconductorTrans IGBT Chip N-CH 600V 80A 3-Pin TO-247 Tube - Bulk (Alt: NGTB40N60FL2WG)
    Min Qty: 118
    Container: Bulk
    Americas - 0
    • 118:$2.6900
    • 120:$2.6900
    • 238:$2.6900
    • 590:$2.5900
    • 1180:$2.5900
    NGTB40N60FL2WG
    DISTI # 70600205
    ON SemiconductorNGTB40N60FL2WG,IGBT Transistor,80 A 600 V,1MHz,3-Pin TO-247
    RoHS: Compliant
    0
    • 2:$3.6000
    • 10:$3.4200
    • 20:$3.2500
    • 50:$3.1000
    • 100:$2.9400
    NGTB40N60FL2WG
    DISTI # 863-NGTB40N60FL2WG
    ON SemiconductorIGBT Transistors 600V/40A FAST IGBT FSII T
    RoHS: Compliant
    162
    • 1:$5.0500
    • 10:$4.2900
    • 100:$3.7200
    • 250:$3.5300
    • 500:$3.1700
    • 1000:$2.6700
    • 2500:$2.5400
    NGTB40N60FL2WGON SemiconductorInsulated Gate Bipolar Transistor, 80A I(C), 600V V(BR)CES, N-Channel
    RoHS: Compliant
    930
    • 1000:$2.7900
    • 500:$2.9400
    • 100:$3.0600
    • 25:$3.1900
    • 1:$3.4300
    영상 부분 # 설명
    IRS2113SPBF

    Mfr.#: IRS2113SPBF

    OMO.#: OMO-IRS2113SPBF

    Gate Drivers HI LO SIDE DRVR 600V 2A 120ns
    FQA32N20C

    Mfr.#: FQA32N20C

    OMO.#: OMO-FQA32N20C

    MOSFET 200V N-Channel Advance Q-FET
    IRS2113SPBF

    Mfr.#: IRS2113SPBF

    OMO.#: OMO-IRS2113SPBF-INFINEON-TECHNOLOGIES

    Gate Drivers HI LO SIDE DRVR 600V 2A 120ns
    FQA32N20C

    Mfr.#: FQA32N20C

    OMO.#: OMO-FQA32N20C-ON-SEMICONDUCTOR

    Darlington Transistors MOSFET 200V N-Channel Advance Q-FET
    유효성
    재고:
    162
    주문 시:
    2145
    수량 입력:
    NGTB40N60FL2WG의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
    참고 가격(USD)
    수량
    단가
    내선 가격
    1
    US$5.05
    US$5.05
    10
    US$4.29
    US$42.90
    100
    US$3.72
    US$372.00
    250
    US$3.53
    US$882.50
    500
    US$3.17
    US$1 585.00
    1000
    US$2.67
    US$2 670.00
    2500
    US$2.54
    US$6 350.00
    시작
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