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BFR 35AP E6327

BFR 35AP E6327
Mfr. #:
BFR 35AP E6327
제조사:
Infineon Technologies
설명:
RF Bipolar Transistors NPN Silicon RF TRANSISTOR
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
BFR 35AP E6327 데이터 시트
배달:
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ECAD Model:
추가 정보:
BFR 35AP E6327 추가 정보
제품 속성
속성 값
제조사
인피니언 테크놀로지스
제품 카테고리
RF 트랜지스터(BJT)
시리즈
BFR35
포장
릴
부분 별칭
BFR35APE6327HTSA1 BFR35APE6327XT SP000011060
단위 무게
0.007090 oz
장착 스타일
SMD/SMT
패키지 케이스
SOT-23
기술
시
구성
하나의
트랜지스터형
양극성
Pd 전력 손실
280 mW
최대 작동 온도
+ 150 C
최소 작동 온도
- 65 C
동작 주파수
5000 MHz
컬렉터-이미터-전압-VCEO-최대
15 V
트랜지스터 극성
NPN
이미 터-베이스-전압-VEBO
2.5 V
최대 DC 수집기 전류
0.045 A
Tags
BFR35APE6, BFR35APE, BFR35AP, BFR35A, BFR35, BFR3, BFR
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
RF Transistors
Infineon RF Transistors include Low Noise Amplifiers and High Linearity Transistors. Devices in the Low Noise category are based on silicon bipolar technology. Moderate transition frequency of fT <20 GHz provides ease of use and stability. Breakdown voltage can safely support supply voltage of 5V. These transistors are suitable for use with AM over VHF/UHF up to 14 GHz. High Linearity Transistors provide OIP3 (Output 3rd Order Intercept Point) above 29 dBm. They are based on Infineon's high volume silicon bipolar and SiGe:C technologies for best in class noise figures. These devices are ideal for drivers, pre-amplifiers, and buffer amplifiers.
부분 # 제조 설명 재고 가격
BFR35APE6327HTSA1
DISTI # BFR35APE6327HTSA1TR-ND		Infineon Technologies AGRF TRANS NPN 15V 5GHZ SOT23-3
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 3000:$0.1066
BFR35APE6327HTSA1
DISTI # SP000011060		Infineon Technologies AGTrans GP BJT NPN 15V 0.045A 3-Pin SOT-23 T/R (Alt: SP000011060)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel		Europe - 3000
  • 3000:€0.1629
  • 6000:€0.1269
  • 12000:€0.1039
  • 18000:€0.0879
  • 30000:€0.0809
BFR 35AP E6327
DISTI # SP000011060		Infineon Technologies AGTrans GP BJT NPN 15V 0.045A 3-Pin SOT-23 T/R (Alt: SP000011060)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel		Europe - 0
  • 3000:€0.1509
  • 6000:€0.1299
  • 12000:€0.1109
  • 18000:€0.0949
  • 30000:€0.0899
BFR35APE6327BTSA1
DISTI # BFR35APE6327HTSA1		Infineon Technologies AGTrans GP BJT NPN 15V 0.045A 3-Pin SOT-23 T/R - Tape and Reel (Alt: BFR35APE6327HTSA1)
RoHS: Compliant
Min Qty: 6000
Container: Reel		Americas - 0
  • 6000:$0.0929
  • 12000:$0.0889
  • 18000:$0.0859
  • 30000:$0.0829
  • 60000:$0.0819
BFR35APE6327HTSA1
DISTI # 13AC8244		Infineon Technologies AGRF TRANSISTOR, NPN, 15V, 5GHZ, SOT-23,Transistor Polarity:NPN,Collector Emitter Voltage V(br)ceo:15V,Transition Frequency ft:5GHz,Power Dissipation Pd:280mW,DC Collector Current:45mA,DC Current Gain hFE:70hFE,RF Transistor RoHS Compliant: Yes2179
  • 1000:$0.1380
  • 500:$0.1520
  • 250:$0.1650
  • 100:$0.1790
  • 50:$0.2240
  • 25:$0.2690
  • 10:$0.3150
  • 1:$0.4110
BFR35APE6327Infineon Technologies AG 
RoHS: Not Compliant		393000
  • 500:$0.0800
  • 1000:$0.0800
  • 25:$0.0900
  • 100:$0.0900
  • 1:$0.1000
BFR35APE6327HTSA1Infineon Technologies AGRF Small Signal Bipolar Transistor, 0.045A I(C), 1-Element, L Band, Silicon, NPN
RoHS: Compliant		18000
  • 500:$0.1100
  • 1000:$0.1100
  • 25:$0.1200
  • 100:$0.1200
  • 1:$0.1300
BFR 35AP E6327
DISTI # 726-BFR35APE6327		Infineon Technologies AGRF Bipolar Transistors NPN Silicon RF TRANSISTOR
RoHS: Compliant		5738
  • 1:$0.3700
  • 10:$0.2870
  • 100:$0.1560
  • 1000:$0.1170
  • 3000:$0.1010
  • 9000:$0.0940
BFR35APE6327HTSA1
DISTI # 726-BFR35APE6327HTSA		Infineon Technologies AGRF Bipolar Transistors NPN Silicon RF TRANSISTOR
RoHS: Compliant		2725
  • 1:$0.3700
  • 10:$0.2870
  • 100:$0.1560
  • 1000:$0.1170
  • 3000:$0.1010
  • 9000:$0.0940
BFR35APE6327HTSA1
DISTI # 4452203P		Infineon Technologies AGNPN BIPOLAR RF BFR35AP 5GHZ SOT23, RL5675
  • 100:£0.1080
BFR35APE6327HTSA1
DISTI # 4452203		Infineon Technologies AGNPN BIPOLAR RF BFR35AP 5GHZ SOT23, PK505
  • 100:£0.1080
  • 5:£0.4000
BFR35APE6327Infineon Technologies AG 2534
    BFR35AP-E6327 INSTOCK2482
      BFR35AP-E6327Infineon Technologies AGINSTOCK2482
        BFR35APE6327HTSA1
        DISTI # 2726104        		Infineon Technologies AGRF TRANSISTOR, NPN, 15V, 5GHZ, SOT-23
        RoHS: Compliant        		2179
        • 500:£0.0882
        • 250:£0.0986
        • 100:£0.1090
        • 25:£0.2420
        • 5:£0.2510
        BFR35APE6327HTSA1
        DISTI # 2726104        		Infineon Technologies AGRF TRANSISTOR, NPN, 15V, 5GHZ, SOT-23
        RoHS: Compliant        		2279
        • 3000:$0.1600
        • 1000:$0.1850
        • 100:$0.2470
        • 10:$0.4550
        • 1:$0.6020
        영상 부분 # 설명
        BFR 35AP E6327

        Mfr.#: BFR 35AP E6327

        OMO.#: OMO-BFR-35AP-E6327

        		 RF Bipolar Transistors NPN Silicon RF TRANSISTOR
        BFR 35AP E6327

        Mfr.#: BFR 35AP E6327

        OMO.#: OMO-BFR-35AP-E6327-317

        		 RF Bipolar Transistors NPN Silicon RF TRANSISTOR
        유효성
        재고:
        Available
        주문 시:
        2500
        수량 입력:
        BFR 35AP E6327의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
        참고 가격(USD)
        수량
        단가
        내선 가격
        1
        US$0.11
        US$0.11
        10
        US$0.11
        US$1.08
        100
        US$0.10
        US$10.25
        500
        US$0.10
        US$48.40
        1000
        US$0.09
        US$91.10
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