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IXFP4N60P3

IXFP4N60P3
Mfr. #:
IXFP4N60P3
제조사:
Littelfuse
설명:
MOSFET Polar3 HiPerFETs MOSFET w/Fast Diode
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
IXFP4N60P3 데이터 시트
배달:
DHL FedEx Ups TNT EMS
지불:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IXFP4N60P3 DatasheetIXFP4N60P3 Datasheet (P4-P6)
ECAD Model:
추가 정보:
IXFP4N60P3 추가 정보
제품 속성
속성 값
제조사:
익시스
제품 카테고리:
MOSFET
기술:
시
장착 스타일:
구멍을 통해
패키지/케이스:
TO-220-3
트랜지스터 극성:
N-채널
Vds - 드레인 소스 항복 전압:
600 V
Id - 연속 드레인 전류:
4 A
Rds On - 드레인 소스 저항:
2.2 Ohms
상표명:
HiPerFET
포장:
튜브
시리즈:
IXFP4N60
상표:
익시스
상품 유형:
MOSFET
공장 팩 수량:
50
하위 카테고리:
MOSFET
단위 무게:
0.012346 oz
Tags
IXFP4N, IXFP4, IXFP, IXF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
*** Electronics
MOSFET N-CH 600V 4A TO-220AB
***el Nordic
Contact for details
***emi
Power MOSFET, N-Channel, QFET®, 600 V, 4.5 A, 2.5 Ω, TO-220
***et Europe
Trans MOSFET N-CH 600V 4.5A 3-Pin(3+Tab) TO-220AB Rail
***ure Electronics
N-Channel 600 V 2.5 Ohm Through Hole Mosfet - TO-220
***ment14 APAC
N CHANNEL MOSFET, 600V, 4.5A TO-220; Tra; Transistor Polarity:N Channel; Continuous Drain Current Id:4.5A; Source Voltage Vds:600V; On
***r Electronics
Power Field-Effect Transistor, 4.5A I(D), 600V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***rchild Semiconductor
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
***ure Electronics
IRFBC30A Series N-Channel 600 V 2.2 Ohm Flange Mount Power Mosfet - TO-220AB
***ical
Trans MOSFET N-CH 600V 3.6A 3-Pin(3+Tab) TO-220AB
***el Electronic
1.2A High Power White LED Driver with I2C Compatible Interface 12-DSBGA -40 to 85
***nell
MOSFET, N, 600V, 3.6A, TO-220; Transistor Polarity: N Channel; Continuous Drain Current Id: 3.6A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 2.2ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4.5V; Power
***et
Trans MOSFET N-CH 600V 3A 3-Pin(3+Tab) TO-220AB Rail
***nell
MOSFET, N TO-220; Transistor Polarity: N Channel; Continuous Drain Current Id: 3A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 2.8ohm; Rds(on) Test Voltage Vgs: -; Threshold Voltage Vgs: -; Power Dissipation Pd: 75W;
***ark
MOSFET, N TO-220MOSFET, N TO-220; Transistor type:MOSFET; Transistor polarity:N; Voltage, Vds max:600V; Case style:TO-220; Current, Id cont:3A; Current, Idm pulse:12A; Power, Pd:75W; Resistance, Rds on:2.8R; Length / Height, RoHS Compliant: Yes
***(Formerly Allied Electronics)
IRFBC30PBF N-channel MOSFET Transistor, 3.6 A, 600 V, 3-Pin TO-220AB
***ure Electronics
Single N-Channel 600 V 2.2 Ohms Flange Mount Power Mosfet - TO-220AB
***trelec
MOSFET Operating temperature: -55...150 °C Housing type: TO-220 Polarity: N Power dissipation: 74 W
***ical
Trans MOSFET N-CH 600V 3.6A 3-Pin(3+Tab) TO-220AB
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 3.6A I(D), 600V, 2.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***nell
MOSFET, N, TO-220; Transistor Polarity: N Channel; Continuous Drain Current Id: 3.6A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 2.2ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation P
***emi
Power MOSFET, N-Channel, QFET®, 600 V, 3 A, 3.4 Ω, TO-220
***ark
TRANSISTOR,MOSFET,N-CHANNEL,600V V(BR)DSS,3A I(D),TO-220AB ROHS COMPLIANT: YES
***Yang
Trans MOSFET N-CH 600V 3A 3-Pin(3+Tab) TO-220AB Rail - Rail/Tube
***ure Electronics
N-Channel 600 V 3.4 Ohm Flange Mount Mosfet - TO-220
***enic
600V 3A 75W 3.4´Î@10V1.5A 4V@250Ã×A N Channel TO-220(TO-220-3) MOSFETs ROHS
***r Electronics
Power Field-Effect Transistor, 3A I(D), 600V, 3.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***rchild Semiconductor
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
***(Formerly Allied Electronics)
IRF830APBF N-channel MOSFET Transistor; 5 A; 500 V; 3-Pin TO-220AB
***ure Electronics
Single N-Channel 500 V 1.4 Ohms Flange Mount Power Mosfet - TO-220-3
*** Source Electronics
Trans MOSFET N-CH 500V 5A 3-Pin(3+Tab) TO-220AB / MOSFET N-CH 500V 5A TO-220AB
***enic
500V 5A 1.4¦¸@10V,3A 74W 4.5V@250¦ÌA N Channel TO-220(TO-220-3) MOSFETs ROHS
***nsix Microsemi
Power Field-Effect Transistor, 5A I(D), 500V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ment14 APAC
MOSFET, N, 500V, 5A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:5A; Drain Source Voltage Vds:500V; On Resistance Rds(on):1.4ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4.5V; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:5A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Junction to Case Thermal Resistance A:1.7°C/W; No. of Transistors:1; Package / Case:TO-220AB; Power Dissipation Pd:74W; Power Dissipation Pd:74W; Pulse Current Idm:20A; Termination Type:Through Hole; Voltage Vds Typ:500V; Voltage Vgs Max:30V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V
Electrical Vehicle DC Fast Chargers
DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.
부분 # 제조 설명 재고 가격
IXFP4N60P3
DISTI # IXFP4N60P3-ND		IXYS CorporationMOSFET N-CH 600V 4A TO-220AB
RoHS: Compliant
Min Qty: 1
Container: Tube		25In Stock
  • 2500:$0.7560
  • 500:$0.9450
  • 100:$1.2150
  • 50:$1.3500
  • 10:$1.5120
  • 1:$1.6700
IXFP4N60P3
DISTI # 747-IXFP4N60P3		IXYS CorporationMOSFET Polar3 HiPerFETs MOSFET w/Fast Diode64
  • 1:$1.9200
  • 10:$1.7400
  • 25:$1.5100
  • 50:$1.4200
  • 100:$1.4000
  • 250:$1.1300
  • 500:$1.0900
  • 1000:$0.9010
  • 2500:$0.7560
영상 부분 # 설명
SM6T18A

Mfr.#: SM6T18A

OMO.#: OMO-SM6T18A

 TVS Diodes / ESD Suppressors 600W 18V Unidirect
P6KE10

Mfr.#: P6KE10

OMO.#: OMO-P6KE10

 TVS Diodes / ESD Suppressors 8.1Vr 600W 40A 10% Uni-Directional
LM8365BALMF27/NOPB

Mfr.#: LM8365BALMF27/NOPB

OMO.#: OMO-LM8365BALMF27-NOPB

 Supervisory Circuits MicroPwr UnderVtg Sensing Circuit
ACNW3130-000E

Mfr.#: ACNW3130-000E

OMO.#: OMO-ACNW3130-000E

 Logic Output Optocouplers 2.5A IGBT Gate Drive
SPP20N60CFDXKSA1

Mfr.#: SPP20N60CFDXKSA1

OMO.#: OMO-SPP20N60CFDXKSA1

 MOSFET N-Ch 600V 20.7A TO220-3
SM6T18A

Mfr.#: SM6T18A

OMO.#: OMO-SM6T18A-STMICROELECTRONICS

 TVS DIODE 15.3V 32.5V SMB
SPP20N60CFDXKSA1

Mfr.#: SPP20N60CFDXKSA1

OMO.#: OMO-SPP20N60CFDXKSA1-INFINEON-TECHNOLOGIES

 MOSFET N-CH 650V 20.7A TO-220
LM8365BALMF27/NOPB

Mfr.#: LM8365BALMF27/NOPB

OMO.#: OMO-LM8365BALMF27-NOPB-TEXAS-INSTRUMENTS

 IC DETECT UNDERVOLT 2.7V SOT23-5
ACNW3130-000E

Mfr.#: ACNW3130-000E

OMO.#: OMO-ACNW3130-000E-BROADCOM

 Logic Output Optocouplers 2.5A IGBT Gate Drive
P6KE10

Mfr.#: P6KE10

OMO.#: OMO-P6KE10-LITTELFUSE

 TVS Diodes - Transient Voltage Suppressors 8.1Vso 6VAC 40A
유효성
재고:
64
주문 시:
2047
수량 입력:
IXFP4N60P3의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
참고 가격(USD)
수량
단가
내선 가격
1
US$1.92
US$1.92
10
US$1.74
US$17.40
25
US$1.51
US$37.75
50
US$1.42
US$71.00
100
US$1.40
US$140.00
250
US$1.13
US$282.50
500
US$1.09
US$545.00
1000
US$0.90
US$900.00
2500
US$0.76
US$1 887.50
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