2SK2414-AZ

Mfr. #:: 2SK2414-AZ
제조사:: Rochester Electronics, LLC
설명:: Trans MOSFET N-CH 60V 10A 3-Pin(2+Tab) TO-251
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: 2SK2414-AZ 데이터 시트
배달:: DHL FedEx Ups TNT EMS
지불:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

제품 속성
속성 값

Tags: 2SK2414, 2SK241, 2SK24, 2SK2, 2SK

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

2SK2414-AZ 설명

***p One Stop Global: Trans MOSFET N-CH 60V 10A 3-Pin(2+Tab) TO-251

***ponent Stockers USA: 10000 mA 60 V N-CHANNEL Si SMALL SIGNAL MOSFET

***egrated Device Technology: Power MOSFETs for Automotive

***icroelectronics: N-Channel 60V - 0.08Ohm - 12A - DPAK StripFET(TM) II POWER MOSFET

***ure Electronics: N-Channel 60 V 0.1 Ohm Surface Mount STripFET II Power MosFet - TO-252-3

***ark: MOSFET, N CH, 60V, 12A, TO-252, FULL REEL; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:12A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes

***S.I.T. Europe - USA - Asia: Power Field-Effect Transistor, 12A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

***Yang: Transistor: P-MOSFET, unipolar, -40V, -50A, 12.3ohm, 69W, -55+175 deg.C, SMD, TO252(DPAK)

***emi: PowerTrench® MOSFET, P-Channel, -40V, -50A, 12.3mΩ

*** Stop Electro: Power Field-Effect Transistor, 50A I(D), 40V, 0.0187ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

***rchild Semiconductor: This P-Channel MOSFET has been produced using Fairchild Semiconductor’s proprietary PowerTrench® technology to deliver low RDS(on) and optimized Bvdss capability to offer superior performance benefit in the applications. and optimized switching performance capability reducing power dissipation losses in converter/inverter applications.

***nell: MOSFET, P CH, 40V, 10.8A, TO-252; Transistor Polarity:P Channel; Continuous Drain Current Id:-50A; Drain Source Voltage Vds:-40V; On Resistance Rds(on):10.1mohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:-1.8V; Power Dissipation Pd:69W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-252; No. of Pins:3; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)

***trelec: Transistor Polarity = P-Channel / Configuration = Single / Continuous Drain Current (Id) A = -50 / Drain-Source Voltage (Vds) V = -40 / ON Resistance (Rds(on)) mOhm = 12.3 / Gate-Source Voltage V = 20 / Fall Time ns = 15 / Rise Time ns = 7 / Turn-OFF Delay Time ns = 38 / Turn-ON Delay Time ns = 10 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = TO-252 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 260 / Power Dissipation (Pd) W = 69

***emi: N-Channel PowerTrench® MOSFET, 30V, 46A, 12mΩ

*** Source Electronics: Trans MOSFET N-CH 30V 12A 3-Pin(2+Tab) DPAK T/R / MOSFET N-CH 30V 12A DPAK

***r Electronics: Power Field-Effect Transistor, 12A I(D), 30V, 0.0125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

***ark: MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:46A; On Resistance, Rds(on):12mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-252 ;RoHS Compliant: Yes

***rchild Semiconductor: This N-Channel Logic level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on state resistance and yet maintain low gate charge for superior switching performance.

***ment14 APAC: MOSFET, N, D-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:46A; Drain Source Voltage Vds:30V; On Resistance Rds(on):12.5mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.9V; Power Dissipation Pd:50W; Transistor Case Style:D-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:D-PAK; Current Id Max:46A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Package / Case:DPAK; Power Dissipation Pd:50W; Power Dissipation Pd:50W; Pulse Current Idm:100A; SMD Marking:FDD6690A; Termination Type:SMD; Voltage Vds:30V; Voltage Vds Typ:30V; Voltage Vgs Max:1.9V; Voltage Vgs Rds on Measurement:10V

***icroelectronics: N-channel 100 V, 0.115 Ohm typ., 13 A low gate charge STripFET II Power MOSFET in DPAK package

***ark: N CHANNEL MOSFET, 100V, 13A, D-PAK, FULL REEL; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:13A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes

***S.I.T. Europe - USA - Asia: Power Field-Effect Transistor, 13A I(D), 100V, 0.13ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

***icroelectronics: N-channel 60 V, 0.08 Ohm typ., 12 A STripFET(TM) II Power MOSFET in a DPAK package

***ark: Mosfet, N, Logic, D-Pak; Transistor Polarity:n Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:12A; On Resistance Rds(On):0.08Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; No. Of Pins:3Pins Rohs Compliant: Yes

***r Electronics: Power Field-Effect Transistor, 12A I(D), 60V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

***nell: MOSFET, N, LOGIC, D-PAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 12A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.08ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2V; Power Dissipation Pd: 30W; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (17-Dec-2015); Alternate Case Style: D-PAK; Current Id Max: 12A; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +175°C; Pulse Current Idm: 48A; SMD Marking: STD12NF06L; Voltage Vds Typ: 60V; Voltage Vgs Max: 16V; Voltage Vgs Rds on Measurement: 10V; Voltage Vgs th Max: 2V

***emi: P-Channel PowerTrench® MOSFET, 30V, -40A, 20mΩ

***ure Electronics: P-Channel 30 V 20 mOhm Surface Mount PowerTrench Mosfet TO-252-3

*** Stop Electro: Power Field-Effect Transistor, 11A I(D), 30V, 0.02ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

***ment14 APAC: MOSFET, P, SMD, TO-252; Transistor Polarity:P Channel; Continuous Drain Current Id:40A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):20mohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:1.8V; Power Dissipation Pd:3.8W; Transistor Case Style:TO-252; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:-40A; Package / Case:DPAK; Power Dissipation Pd:3.8W; Termination Type:SMD; Voltage Vds Typ:30V; Voltage Vgs Max:-1.8V; Voltage Vgs Rds on Measurement:10V

***rchild Semiconductor: This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5V – 25V).

***trelec: Transistor Polarity = P-Channel / Configuration = Single / Continuous Drain Current (Id) A = -40 / Drain-Source Voltage (Vds) V = -30 / ON Resistance (Rds(on)) mOhm = 20 / Gate-Source Voltage V = 25 / Fall Time ns = 21 / Rise Time ns = 11 / Turn-OFF Delay Time ns = 43 / Turn-ON Delay Time ns = 17 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-252 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 260 / Power Dissipation (Pd) W = 52

Market price

부분 #	제조	설명	재고	가격
2SK2414-AZ DISTI # C1S525000303664	Renesas Electronics Corporation	Trans MOSFET N-CH 60V 10A 3-Pin(2+Tab) TO-251 RoHS: Compliant	2300	1000:$3.2200 500:$3.2500 200:$3.5600 50:$3.9800
2SK2414-AZ	Renesas Electronics Corporation	Small Signal Field-Effect Transistor, 10A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant	2458	1000:$0.6000 500:$0.6400 100:$0.6600 25:$0.6900 1:$0.7400

관련 상품

영상	부분 #	설명
	Mfr.#: 2SK241-GR.Y(F) OMO.#: OMO-2SK241-GR-Y-F--1190	신규 및 오리지널
	Mfr.#: 2SK2414-AZ OMO.#: OMO-2SK2414-AZ-1190	Trans MOSFET N-CH 60V 10A 3-Pin(2+Tab) TO-251
	Mfr.#: 2SK2414-Z-E1 OMO.#: OMO-2SK2414-Z-E1-1190	신규 및 오리지널
	Mfr.#: 2SK2417,2SK2750,K2417,K2 OMO.#: OMO-2SK2417-2SK2750-K2417-K2-1190	신규 및 오리지널
	Mfr.#: 2SK242-4-TB-E OMO.#: OMO-2SK242-4-TB-E-1190	신규 및 오리지널
	Mfr.#: 2SK242-5 OMO.#: OMO-2SK242-5-1190	신규 및 오리지널
	Mfr.#: 2SK2425-E OMO.#: OMO-2SK2425-E-1190	Power Field-Effect Transistor, 7A I(D), 250V, 0.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
	Mfr.#: 2SK2433-TL OMO.#: OMO-2SK2433-TL-1190	신규 및 오리지널
	Mfr.#: 2SK2440-TL , RD4.7JS-T1 OMO.#: OMO-2SK2440-TL-RD4-7JS-T1-1190	신규 및 오리지널
	Mfr.#: 2SK246G OMO.#: OMO-2SK246G-1190	신규 및 오리지널

유효성

재고:: Available
주문 시:: 3000
수량 입력:

2SK2414-AZ의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.

참고 가격(USD)

수량
단가
내선 가격

1: ~~US$0.81~~; ~~US$0.81~~

10: ~~US$0.77~~; ~~US$7.69~~

100: ~~US$0.73~~; ~~US$72.90~~

500: ~~US$0.69~~; ~~US$344.25~~

1000: ~~US$0.65~~; ~~US$648.00~~

시작

2SK2414 7
2SK241 25
2SK24 73
2SK2 1104
2SK 4442

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2SK2414-AZ

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes