IRLZ34NSTRLPBF

Mfr. #:: IRLZ34NSTRLPBF
제조사:: Infineon Technologies
설명:: MOSFET MOSFT 55V 30A 35mOhm 16.7nC LogLvl
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: IRLZ34NSTRLPBF 데이터 시트
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HTML Datasheet:: IRLZ34NSTRLPBF Datasheet IRLZ34NSTRLPBF Datasheet (P4-P6)IRLZ34NSTRLPBF Datasheet (P7-P9)IRLZ34NSTRLPBF Datasheet (P10-P11)
ECAD Model:

제품 속성
속성 값

제조사:: 인피니언

제품 카테고리:: MOSFET

RoHS:: Y

기술:: 시

장착 스타일:: SMD/SMT

패키지/케이스:: TO-252-3

채널 수:: 1 Channel

트랜지스터 극성:: N-채널

Vds - 드레인 소스 항복 전압:: 55 V

Id - 연속 드레인 전류:: 30 A

Rds On - 드레인 소스 저항:: 60 mOhms

Vgs - 게이트 소스 전압:: 16 V

Qg - 게이트 차지:: 16.7 nC

Pd - 전력 손실:: 68 W

구성:: 하나의

포장:: 릴

키:: 2.3 mm

길이:: 6.5 mm

트랜지스터 유형:: 1 N-Channel

너비:: 6.22 mm

상표:: 인피니언 테크놀로지스

상품 유형:: MOSFET

공장 팩 수량:: 800

하위 카테고리:: MOSFET

부품 번호 별칭:: SP001573060

단위 무게:: 0.139332 oz

Tags: IRLZ34NST, IRLZ34NS, IRLZ34N, IRLZ3, IRLZ, IRL

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Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IRLZ34NSTRLPBF 설명

***ineon SCT: 55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS

***ure Electronics: Single N-Channel 55 V 0.06 Ohm 25 nC HEXFET® Power Mosfet - D2PAK

***p One Stop: Trans MOSFET N-CH 55V 30A 3-Pin(2+Tab) D2PAK T/R

***eco: IRLZ34NSTRLPBF,MOSFET, 55V, 30 A, 35 MOHM, 16.7 NC QG, LOGIC

*** Stop Electro: Power Field-Effect Transistor, 30A I(D), 55V, 0.046ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

***ineon: Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature; Logic Level

***ark: MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Continuous Drain Current, Id:30A; On Resistance, Rds(on):60mohm; Rds(on) Test Voltage, Vgs:16V; Package/Case:D-Pak; Power Dissipation, Pd:68W ;RoHS Compliant: Yes

***ment14 APAC: MOSFET, N, 55V, D2-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:30A; Drain Source Voltage Vds:55V; On Resistance Rds(on):35ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2V; Power Dissipation Pd:68W; Transistor Case Style:D2-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Cont Current Id @ 100°C:21A; Cont Current Id @ 25°C:30A; Current Id Max:30A; Package / Case:D2-PAK; Power Dissipation Pd:68W; Power Dissipation Pd:68W; Pulse Current Idm:110A; Rth:2.2; Termination Type:SMD; Voltage Vds:55V; Voltage Vds Typ:55V; Voltage Vgs Max:2V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2V; Voltage Vgs th Min:1V

***trelec: Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 30 / Drain-Source Voltage (Vds) V = 55 / ON Resistance (Rds(on)) mOhm = 35 / Gate-Source Voltage V = 16 / Fall Time ns = 29 / Rise Time ns = 100 / Turn-OFF Delay Time ns = 21 / Turn-ON Delay Time ns = 8.9 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-263 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 300 / Power Dissipation (Pd) W = 68

***ure Electronics: Single N-Channel 55 V 0.04 Ohm 34 nC HEXFET® Power Mosfet - D2PAK

***ineon SCT: 55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS

***fin: Transistor NPN Field Effect IRFZ34/SO/IRFZ34NS INTERNATIONAL RECTIFIER Ampere=26 V=55 TO263

***ical: Trans MOSFET N-CH 55V 29A 3-Pin(2+Tab) D2PAK Tube

***(Formerly Allied Electronics): MOSFET, 55V, 29A, 40 MOHM, 22.7 NC QG, D2-PAK | Infineon IRFZ34NSTRRPBF

*** Stop Electro: Power Field-Effect Transistor, 29A I(D), 55V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

***ineon: Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature

***ark: N Channel Mosfet, 55V, 29A, D2-Pak; Transistor Polarity:n Channel; Drain Source Voltage Vds:55V; Continuous Drain Current Id:29A; On Resistance Rds(On):0.04Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V Rohs Compliant: Yes

***emi: N-Channel Power MOSFET, Logic Level, QFET®, 60 V, 32 A, 35 mΩ, D2PAK

***ark: TRANSISTOR,MOSFET,N-CHANNEL,60V V(BR)DSS,32A I(D),TO-263AB

***ure Electronics: N-Channel 60 V 0.035 Ohm Surface Mount Mosfet - D2PAK-3

***et: Trans MOSFET N-CH 60V 32A 3-Pin(2+Tab) D2PAK T/R

***enic: 60V 32A 35m´Î@10V16A 79W 2.5V@250Ã×A N Channel D2PAK¨×TO-263AB¨Ø MOSFETs ROHS

***r Electronics: Power Field-Effect Transistor, 32A I(D), 60V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

***nell: MOSFET, N CH, 60V, 32A, TO263AB-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 32A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.027ohm; Available until stocks are exhausted Alternative available

***rchild Semiconductor: This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.

***icroelectronics: N-channel 60 V, 0.22 Ohm typ., 38 A STripFET(TM) II Power MOSFET in a D2PAK package

***ure Electronics: N-Channel 60 V 38 A 28 mOhm 80 W Surface Mount STripFET Mosfet - D2PAK

***ical: Trans MOSFET N-CH 60V 38A Automotive 3-Pin(2+Tab) D2PAK T/R

***ment14 APAC: MOSFET, N CH, 60V, 38A, D2PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:19A; Drain Source Voltage Vds:60V; On Resistance Rds(on):235mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:80W; Operating Temperature Range:-65°C to +175°C; Transistor Case Style:D2-PAK; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:38A; Package / Case:D2-PAK; Power Dissipation Pd:80W; Termination Type:SMD; Transistor Type:Power MOSFET; Voltage Vds Typ:60V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V

***icroelectronics: N-channel 60V - 0.032Ohm - 30A - D2PAK STripFET(TM) II Power MOSFET

***ical: Trans MOSFET N-CH 60V 30A Automotive 3-Pin(2+Tab) D2PAK T/R

***ure Electronics: N-Channel 60 V 0.04 Ohm Surface Mount STripFET II Power MosFet - D2PAK

***r Electronics: Power Field-Effect Transistor, 30A I(D), 60V, 0.048ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

***nell: MOSFET, N-CH, 60V, 30A, D2PAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 30A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.032ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1V; Power D

Market price

부분 #	제조	설명	재고	가격
IRLZ34NSTRLPBF DISTI # V36:1790_13891279	Infineon Technologies AG	Trans MOSFET N-CH 55V 30A 3-Pin(2+Tab) D2PAK T/R RoHS: Compliant	5600	40000:$0.4363 24000:$0.4848 8000:$0.4851 1600:$0.5422
IRLZ34NSTRLPBF DISTI # V72:2272_13891279	Infineon Technologies AG	Trans MOSFET N-CH 55V 30A 3-Pin(2+Tab) D2PAK T/R RoHS: Compliant	1064	1000:$0.5232 500:$0.6710 250:$0.7234 100:$0.7512 25:$0.9479 10:$0.9499 1:$1.0919
IRLZ34NSTRLPBF DISTI # IRLZ34NSTRLPBFCT-ND	Infineon Technologies AG	MOSFET N-CH 55V 30A D2PAK RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	28011In Stock	100:$1.0307 10:$1.3040 1:$1.4700
IRLZ34NSTRLPBF DISTI # IRLZ34NSTRLPBFDKR-ND	Infineon Technologies AG	MOSFET N-CH 55V 30A D2PAK RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	28011In Stock	100:$1.0307 10:$1.3040 1:$1.4700
IRLZ34NSTRLPBF DISTI # IRLZ34NSTRLPBFTR-ND	Infineon Technologies AG	MOSFET N-CH 55V 30A D2PAK RoHS: Compliant Min Qty: 800 Container: Tape & Reel (TR)	28000In Stock	800:$0.6780
IRLZ34NSTRLPBF DISTI # 30568028	Infineon Technologies AG	Trans MOSFET N-CH 55V 30A 3-Pin(2+Tab) D2PAK T/R RoHS: Compliant	4800	1600:$0.5422
IRLZ34NSTRLPBF DISTI # 30702069	Infineon Technologies AG	Trans MOSFET N-CH 55V 30A 3-Pin(2+Tab) D2PAK T/R RoHS: Compliant	4800	1600:$0.3984 800:$0.4128
IRLZ34NSTRLPBF DISTI # 30321972	Infineon Technologies AG	Trans MOSFET N-CH 55V 30A 3-Pin(2+Tab) D2PAK T/R RoHS: Compliant	1064	1000:$0.5232 500:$0.6710 250:$0.7234 100:$0.7512 25:$0.9479 14:$0.9499
IRLZ34NSTRLPBF DISTI # IRLZ34NSTRLPBF	Infineon Technologies AG	Trans MOSFET N-CH 55V 30A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel (Alt: IRLZ34NSTRLPBF) RoHS: Compliant Min Qty: 1600 Container: Reel	Americas - 0	1600:$0.4269 3200:$0.4119 4800:$0.3969 8000:$0.3839 16000:$0.3769
IRLZ34NSTRLPBF DISTI # IRLZ34NSTRLPBF	Infineon Technologies AG	Trans MOSFET N-CH 55V 30A 3-Pin(2+Tab) D2PAK T/R (Alt: IRLZ34NSTRLPBF) RoHS: Compliant Min Qty: 1600 Container: Tape and Reel	Asia - 0	1600:$0.4050 3200:$0.3937 4800:$0.3831 8000:$0.3730 16000:$0.3682 40000:$0.3635 80000:$0.3589
IRLZ34NSTRLPBF DISTI # SP001573060	Infineon Technologies AG	Trans MOSFET N-CH 55V 30A 3-Pin(2+Tab) D2PAK T/R (Alt: SP001573060) RoHS: Compliant Min Qty: 800 Container: Tape and Reel	Europe - 0	800:€0.4809 1600:€0.4789 3200:€0.4779 4800:€0.4769 8000:€0.4759
IRLZ34NSTRLPBF DISTI # 70019902	Infineon Technologies AG	IRLZ34NSTRLPBF N-channel MOSFET Transistor,30 A,55 V,3+Tab-Pin D2PAK RoHS: Compliant	0	1600:$1.7600
IRLZ34NSTRLPBF DISTI # 942-IRLZ34NSTRLPBF	Infineon Technologies AG	MOSFET MOSFT 55V 30A 35mOhm 16.7nC LogLvl RoHS: Compliant	9921	1:$1.2200 10:$1.0400 100:$0.7990 500:$0.7060 800:$0.5570
IRLZ34NSTRLPBF	Infineon Technologies AG	Single N-Channel 55 V 0.06 Ohm 25 nC HEXFET Power Mosfet - D2PAK RoHS: Compliant	4000Reel	800:$0.4750 1600:$0.4600
IRLZ34NSTRLPBF	International Rectifier	Power Field-Effect Transistor, 30A I(D), 55V, 0.046ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB RoHS: Compliant	400	1000:$0.4900 500:$0.5100 100:$0.5300 25:$0.5600 1:$0.6000
IRLZ34NSTRLPBF DISTI # 9155112P	Infineon Technologies AG	MOSFET N-CHANNEL HEXFET 55V 30A D2PAK, RL	2380	40:£0.6660 200:£0.5780 400:£0.4910 1000:£0.4030
IRLZ34NSTRLPBF	International Rectifier		9933
IRLZ34NSTRLPBF DISTI # TMOSP12700	Infineon Technologies AG	N-CH 55V 30A 35mOhm TO263 RoHS: Compliant	Stock DE - 0Stock US - 0	1600:$0.4817 3200:$0.4525 4800:$0.4087 9600:$0.3941
IRLZ34NSTRLPBF DISTI # 1298487	Infineon Technologies AG	MOSFET, N, 55V, D2-PAK RoHS: Compliant	0	1:$1.9400 10:$1.6500 100:$1.2600 500:$1.1200 800:$0.8810

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IRLZ34NSTRLPBF

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes