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| 부분 # | 제조 | 설명 | 재고 | 가격 |
|---|---|---|---|---|
| PSMN5R0-100ES,127 DISTI # V36:1790_06540948 | Nexperia | AT | 5000 |
|
| PSMN5R0-100ES,127 DISTI # 1727-5286-ND | Nexperia | MOSFET N-CH 100V 120A I2PAK RoHS: Compliant Min Qty: 1 Container: Tube | 2966In Stock |
|
| PSMN5R0-100ES,127 DISTI # C1S537100597858 | Nexperia | Trans MOSFET N-CH 100V 120A 3-Pin(3+Tab) I2PAK Rail RoHS: Compliant | 50 |
|
| PSMN5R0-100ES,127 DISTI # 25666446 | Nexperia | AT | 5000 |
|
| PSMN5R0-100ES,127 DISTI # PSMN5R0-100ES,127 | Nexperia | Trans MOSFET N-CH 100V 120A 3-Pin(3+Tab) I2PAK Rail - Rail/Tube (Alt: PSMN5R0-100ES,127) RoHS: Compliant Min Qty: 5000 Container: Tube | Americas - 0 |
|
| PSMN5R0-100ES,127 DISTI # 771-PSMN5R0100ES127 | Nexperia | MOSFET N-Ch 100V 5 mOhms RoHS: Compliant | 0 |
|
| PSMN5R0-100ES | NXP Semiconductors | Now Nexperia PSMN5R0-100ES - Power Field-Effect Transistor, 120A I(D), 100V, 0.005ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA RoHS: Compliant | 800 |
|
| PSMN5R0-100ES127 | NXP Semiconductors | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET RoHS: Compliant | 24349 |
|
| 영상 | 부분 # | 설명 |
|---|---|---|
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Mfr.#: PSMN5R6-60YLX OMO.#: OMO-PSMN5R6-60YLX |
MOSFET PSMN5R6-60YL/LFPAK/REEL 7" Q1/ |
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Mfr.#: PSMN5R0-30YL,115 OMO.#: OMO-PSMN5R0-30YL-115 |
MOSFET <=30V N CH TRENCHFET |
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Mfr.#: PSMN5R4-25YLDX OMO.#: OMO-PSMN5R4-25YLDX |
MOSFET PSMN5R4-25YLD/LFPAK/REEL 7" Q1 |
|
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Mfr.#: PSMN5R0-100PS,127 |
MOSFET N-CH 100V 120A TO220AB |
|
Mfr.#: PSMN5R080PS OMO.#: OMO-PSMN5R080PS-1190 |
신규 및 오리지널 |
|
Mfr.#: PSMN5R5-60YS OMO.#: OMO-PSMN5R5-60YS-1190 |
POWER FIELD-EFFECT TRANSISTOR, 100A I(D), 60V, 0.055OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, MO-235 |
|
Mfr.#: PSMN5R6-100BS OMO.#: OMO-PSMN5R6-100BS-1190 |
MOSFET, N-CH, 100V, 100A, D2PAK |
|
Mfr.#: PSMN5R8-30LL OMO.#: OMO-PSMN5R8-30LL-1190 |
신규 및 오리지널 |
|
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Mfr.#: PSMN5R8-30LL,115 |
MOSFET N-CH 30V QFN3333 |
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Mfr.#: PSMN5R6-100PS127 OMO.#: OMO-PSMN5R6-100PS127-1190 |
Now Nexperia PSMN5R6-100PS - Power Field-Effect Transistor, 100A I(D), 100V, 0.0056ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB |