S29GL01GS11TFIV10

S29GL01GS11TFIV10
Mfr. #:
S29GL01GS11TFIV10
제조사:
Cypress Semiconductor
설명:
IC FLASH 1G PARALLEL 56TSOP
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
S29GL01GS11TFIV10 데이터 시트
배달:
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지불:
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추가 정보:
S29GL01GS11TFIV10 추가 정보 S29GL01GS11TFIV10 Product Details
제품 속성
속성 값
제조사
싸이프레스 반도체
제품 카테고리
메모리
시리즈
GL-S
포장
쟁반
장착 스타일
SMD/SMT
작동 온도 범위
- 40 C to + 85 C
패키지 케이스
TSOP-56
작동 온도
-40°C ~ 85°C (TA)
상호 작용
평행 한
전압 공급
1.65 V ~ 3.6 V
공급자-장치-패키지
56-TSOP
메모리 크기
1G (64M x 16)
메모리형
플래시 - NOR
속도
110ns
건축학
포맷 메모리
플래시
인터페이스 유형
평행 한
조직
64 M x 16
공급 전류 최대
100 mA
데이터 버스 너비
16 bit
공급 전압 최대
3.6 V
공급 전압 최소
2.7 V
타이밍 유형
비동기
Tags
S29GL01GS11TFIV, S29GL01GS11TFI, S29GL01GS11T, S29GL01GS11, S29GL01GS, S29GL01G, S29GL01, S29GL0, S29GL, S29G, S29
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ress Semiconductor SCT
Parallel NOR Flash Memory, 1024 Mbit Density, 110 ns Initial Access Time, TSOP-56, RoHS
***et
NOR Flash Parallel 3V/3.3V 1Gbit 64M x 16bit 110ns 56-Pin TSOP Tray
***ment14 APAC
MEMORY, FLASH NOR, 1GBIT, TSOP-56; Memory Type:Flash - NOR; Memory Size:1Gbit; Flash Memory Configuration:128M x 8bit; Supply Voltage Min:2.7V; Supply Voltage Max:3.6V; Memory Case Style:TSOP; No. of Pins:56; Clock Frequency:-; MSL:-
S29 GL-S MirrorBit® Eclipse™ Flash
Cypress S29 GL-S MirrorBit® Eclipse™ Flash products are fabricated on 65nm process technology. These devices offer a fast page access time - as fast as 15ns with a corresponding random access time as fast as 90ns. MirrorBit® Eclipse™ Flash non-volatile memory is a CMOS 3V core with versatile I/O interface. S29 GL-S MirrorBit® Eclipse™ Flash features a Write Buffer that allows a maximum of 256 words/512 bytes to be programmed in one operation. This results in faster effective programming time than standard programming algorithms. Programming time makes the S29 GL-S flash ideal for today's embedded applications that require higher density, better performance, and lower power consumption.
부분 # 제조 설명 재고 가격
S29GL01GS11TFIV10
DISTI # 1274-1080-ND
Cypress SemiconductorIC FLASH 1G PARALLEL 56TSOP
RoHS: Compliant
Min Qty: 1
Container: Tray
587In Stock
  • 1001:$8.0845
  • 546:$8.3632
  • 273:$8.4500
  • 182:$8.8898
  • 91:$10.0978
  • 25:$10.1536
  • 10:$10.3890
  • 1:$11.2200
S29GL01GS11TFIV10
DISTI # 39T5698
Cypress SemiconductorMEMORY, FLASH NOR, 1GBIT, TSOP-56,Flash Memory Type:Parallel NOR,Memory Size:1Gbit,Flash Memory Configuration:128M x 8bit,IC Interface Type:Parallel,Memory Case Style:TSOP,No. of Pins:56Pins,Clock Frequency:- RoHS Compliant: Yes0
  • 250:$7.6500
  • 100:$7.8300
  • 50:$8.6600
  • 25:$8.7100
  • 10:$8.9100
  • 1:$9.6300
S29GL01GS11TFIV10Spansion 
RoHS: Not Compliant
10
  • 1000:$8.9300
  • 500:$9.4000
  • 100:$9.7900
  • 25:$10.2100
  • 1:$11.0000
S29GL01GS11TFIV10
DISTI # 797-S29GL01GS11TFIV1
Cypress SemiconductorNOR Flash 1G 3V 110ns Parallel NOR Flash
RoHS: Compliant
0
  • 1:$9.6300
  • 10:$8.9100
  • 25:$8.7100
  • 50:$8.6600
  • 100:$7.8300
  • 250:$7.6500
S29GL01GS11TFIV10
DISTI # 2723200
Cypress SemiconductorMEMORY, FLASH NOR, 1GBIT, TSOP-56
RoHS: Compliant
0
  • 100:£7.4600
  • 50:£7.7300
  • 25:£7.7700
  • 10:£7.9500
  • 1:£8.6000
S29GL01GS11TFIV10
DISTI # XSFR00000012162
CYPRESS SEMICONDUCTOR 
RoHS: Compliant
91
    S29GL01GS11TFIV10
    DISTI # 2723200
    Cypress SemiconductorMEMORY, FLASH NOR, 1GBIT, TSOP-56
    RoHS: Compliant
    0
    • 100:$12.4400
    • 50:$13.7100
    • 25:$13.7900
    • 10:$14.1100
    • 1:$15.2400
    영상 부분 # 설명
    S29GL01GS11FHI020

    Mfr.#: S29GL01GS11FHI020

    OMO.#: OMO-S29GL01GS11FHI020

    NOR Flash Nor
    S29GL01GT11DHB013

    Mfr.#: S29GL01GT11DHB013

    OMO.#: OMO-S29GL01GT11DHB013

    NOR Flash IC 1 Gb FLASHMEM
    S29GL01GS10DHSS23

    Mfr.#: S29GL01GS10DHSS23

    OMO.#: OMO-S29GL01GS10DHSS23

    NOR Flash Nor
    S29GL01GP11TFIR20

    Mfr.#: S29GL01GP11TFIR20

    OMO.#: OMO-S29GL01GP11TFIR20

    NOR Flash 1GB 3.0-3.6V 110ns Parallel NOR Flash
    S29GL01GT10FAI013

    Mfr.#: S29GL01GT10FAI013

    OMO.#: OMO-S29GL01GT10FAI013-CYPRESS-SEMICONDUCTOR

    IC FLASH 1G PARALLEL Automotive, AEC-Q100, GL-T
    S29GL01GT12DHVV20

    Mfr.#: S29GL01GT12DHVV20

    OMO.#: OMO-S29GL01GT12DHVV20-CYPRESS-SEMICONDUCTOR

    IC FLASH 1G PARALLEL 64FBGA GL-T
    S29GL01GS11TFV010

    Mfr.#: S29GL01GS11TFV010

    OMO.#: OMO-S29GL01GS11TFV010-CYPRESS-SEMICONDUCTOR

    Flash Memory 1G BIT, 3V, 110NS, 56-LEAD TSOP, PAGE MODE FLASH MEMORY FEATURING 65 NM MIRRORBIT PROCESS TECHNOLOGY, HIGHEST ADDRESS SECTOR PROTECTED
    S29GL01GS10TFI013

    Mfr.#: S29GL01GS10TFI013

    OMO.#: OMO-S29GL01GS10TFI013-CYPRESS-SEMICONDUCTOR

    Flash Memory 1G BIT, 3V, 100NS, 56-LEAD TSOP, PAGE MODE FLASH MEMORY FEATURING 65 NM MIRRORBIT PROCESS TECHNOLOGY, HIGHEST ADDRESS SECTOR PROTECTED
    S29GL01GS10DHSS13

    Mfr.#: S29GL01GS10DHSS13

    OMO.#: OMO-S29GL01GS10DHSS13-CYPRESS-SEMICONDUCTOR

    IC FLASH 1G PARALLEL 64BGA GL-S
    S29GL01GS12DHVV1

    Mfr.#: S29GL01GS12DHVV1

    OMO.#: OMO-S29GL01GS12DHVV1-1190

    신규 및 오리지널
    유효성
    재고:
    Available
    주문 시:
    2500
    수량 입력:
    S29GL01GS11TFIV10의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
    참고 가격(USD)
    수량
    단가
    내선 가격
    1
    US$11.48
    US$11.48
    10
    US$10.90
    US$109.01
    100
    US$10.33
    US$1 032.75
    500
    US$9.75
    US$4 876.90
    1000
    US$9.18
    US$9 180.00
    2021년부터 반도체 공급 부족으로 인해 아래 가격은 2021년 이전 정상 가격입니다. 확인을 위해 문의를 보내주세요.
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