TK560P65Y,RQ

Mfr. #:: TK560P65Y,RQ
제조사:: Toshiba
설명:: MOSFET N-Ch DTMOSV 650V 60W 380pF 7.0A
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: TK560P65Y,RQ 데이터 시트
배달:: DHL FedEx Ups TNT EMS
지불:: T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:: TK560P65Y,RQ Datasheet TK560P65Y,RQ Datasheet (P4-P6)TK560P65Y,RQ Datasheet (P7-P9)TK560P65Y,RQ Datasheet (P10)
ECAD Model:
추가 정보:: TK560P65Y,RQ 추가 정보

제품 속성
속성 값

제조사:: 도시바

제품 카테고리:: MOSFET

RoHS:: Y

기술:: 시

장착 스타일:: SMD/SMT

패키지/케이스:: DPAK-3

채널 수:: 1 Channel

트랜지스터 극성:: N-채널

Vds - 드레인 소스 항복 전압:: 650 V

Id - 연속 드레인 전류:: 7 A

Rds On - 드레인 소스 저항:: 430 mOhms

Vgs th - 게이트 소스 임계 전압:: 3 V

Vgs - 게이트 소스 전압:: 30 V

Qg - 게이트 차지:: 14.5 nC

최소 작동 온도:: -

최대 작동 온도:: + 150 C

Pd - 전력 손실:: 60 W

구성:: 하나의

채널 모드:: 상승

상표명:: DTMOSV

포장:: 릴

시리즈:: TK560P65Y

트랜지스터 유형:: 1 N-Channel

상표:: 도시바

가을 시간:: 8 ns

상품 유형:: MOSFET

상승 시간:: 20 ns

공장 팩 수량:: 2000

하위 카테고리:: MOSFET

일반적인 끄기 지연 시간:: 105 ns

일반적인 켜기 지연 시간:: 50 ns

Tags: TK560P65, TK560P, TK560, TK56, TK5

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

TK560P65Y,RQ 설명

***ark: X35 Pb-F Power Mosfet Transistor Dpak(Os) Pd=60W F=1Mhz Rohs Compliant: Yes

***ical: Trans MOSFET N-CH Si 650V 7A 3-Pin(2+Tab) DPAK T/R

***et: Power MOSFET N-Channel 650V 7A 3-Pin DPAK T/R

TK560P65Y,RQ 추가 정보

DTMOS V Super Junction MOSFETs: Toshiba DTMOS V Super Junction MOSFETs are the next generation of N-channel, deep trench semiconductor technology for high-efficient power MOSFETs. The DTMOS V operates with lower EMI noise, and a 17% reduction On Resistance RDS(ON) compared to the DTMOS IV MOSFETs. The DTMOS V has a deep trench etching process, that results in a narrowing of cell pitch, and a lowering of RDS(ON) when compared with more conventional planar processes. DTMOS V Super Junction MOSFETs are ideal to improve the performance, and facilitate the design of power conversion applications. Applications that include switching power supplies, power factor correction (PFC) designs, and LED lighting. Learn More

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