SI2313DS-T1-GE3

Mfr. #:: SI2313DS-T1-GE3
제조사:: Vishay Intertechnologies
설명:
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: SI2313DS-T1-GE3 데이터 시트
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ECAD Model:

제품 속성
속성 값

Tags: SI2313DS-T, SI2313D, SI2313, SI231, SI23, SI2

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Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

Market price

부분 #	제조	설명	재고	가격
SI2312BDS-T1-GE3 DISTI # V72:2272_09216793	Vishay Intertechnologies	Trans MOSFET N-CH 20V 3.9A 3-Pin SOT-23 T/R RoHS: Compliant	181	100:$0.2690 25:$0.3144 10:$0.3493 1:$0.3987
SI2312BDS-T1-GE3 DISTI # V36:1790_09216793	Vishay Intertechnologies	Trans MOSFET N-CH 20V 3.9A 3-Pin SOT-23 T/R RoHS: Compliant	0	3000:$0.2127
SI2312BDS-T1-GE3 DISTI # SI2312BDS-T1-GE3CT-ND	Vishay Siliconix	MOSFET N-CH 20V 3.9A SOT23-3 Min Qty: 1 Container: Cut Tape (CT)	92442In Stock	1000:$0.1712 500:$0.2216 100:$0.2820 10:$0.3780 1:$0.4400
SI2312BDS-T1-GE3 DISTI # SI2312BDS-T1-GE3DKR-ND	Vishay Siliconix	MOSFET N-CH 20V 3.9A SOT23-3 Min Qty: 1 Container: Digi-Reel®	92442In Stock	1000:$0.1712 500:$0.2216 100:$0.2820 10:$0.3780 1:$0.4400
SI2312BDS-T1-GE3 DISTI # SI2312BDS-T1-GE3TR-ND	Vishay Siliconix	MOSFET N-CH 20V 3.9A SOT23-3 Min Qty: 3000 Container: Tape & Reel (TR)	90000In Stock	30000:$0.1301 15000:$0.1320 6000:$0.1418 3000:$0.1516
SI2312BDS-T1-GE3 DISTI # 34757283	Vishay Intertechnologies	Trans MOSFET N-CH 20V 3.9A 3-Pin SOT-23 T/R RoHS: Compliant	9000	3000:$0.1564
SI2312BDS-T1-GE3 DISTI # 32142891	Vishay Intertechnologies	Trans MOSFET N-CH 20V 3.9A 3-Pin SOT-23 T/R RoHS: Compliant	181	100:$0.2690 35:$0.3144
SI2312BDS-T1-GE3 DISTI # 30601987	Vishay Intertechnologies	Trans MOSFET N-CH 20V 3.9A 3-Pin SOT-23 T/R RoHS: Compliant	49	23:$0.5062
SI2312BDS-T1-GE3 DISTI # SI2312BDS-T1-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 20V 3.9A 3-Pin TO-236 T/R (Alt: SI2312BDS-T1-GE3) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel	Asia - 3000	6000:$0.0675 3000:$0.0676
SI2312BDS-T1-GE3 DISTI # SI2312BDS-T1-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 20V 3.9A 3-Pin TO-236 T/R - Tape and Reel (Alt: SI2312BDS-T1-GE3) RoHS: Not Compliant Min Qty: 3000 Container: Reel	Americas - 3000	30000:$0.1667 18000:$0.1713 12000:$0.1762 6000:$0.1836 3000:$0.1892
SI2312BDS-T1-GE3 DISTI # SI2312BDS-T1-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 20V 3.9A 3-Pin TO-236 T/R (Alt: SI2312BDS-T1-GE3) Min Qty: 3000 Container: Tape and Reel	Europe - 0	30000:€0.1954 18000:€0.2020 12000:€0.2087 6000:€0.2153 3000:€0.2220
SI2312BDS-T1-GE3 DISTI # 16P3709	Vishay Intertechnologies	N CHANNEL MOSFET, 20V, 5A, TO-236,Transistor Polarity:N Channel,Continuous Drain Current Id:3.9A,Drain Source Voltage Vds:20V,On Resistance Rds(on):0.025ohm,Rds(on) Test Voltage Vgs:4.5V,Threshold Voltage Vgs:850mV,MSL:- RoHS Compliant: Yes RoHS: Compliant	0	1000:$0.2210 500:$0.2860 250:$0.3170 100:$0.3480 50:$0.4090 25:$0.4690 1:$0.6100
SI2312BDS-T1-GE3. DISTI # 16AC0252	Vishay Intertechnologies	Transistor Polarity:N Channel,Continuous Drain Current Id:3.9A,Drain Source Voltage Vds:20V,On Resistance Rds(on):0.025ohm,Rds(on) Test Voltage Vgs:4.5V,Threshold Voltage Vgs:850mV,Power Dissipation Pd:750mW,No. of Pins:3Pins RoHS Compliant: No RoHS: Not Compliant	0	50000:$0.1680 30000:$0.1760 20000:$0.1890 10000:$0.2020 5000:$0.2190 1:$0.2240
SI2312BDS-T1-GE3	Vishay Intertechnologies	Single N-Channel 20 V 0.031 Ohm Surface Mount Power MosFet - SOT-23-3 RoHS: Compliant Min Qty: 1	6030Cut Tape/Mini-Reel	1500:$0.2100 750:$0.2250 500:$0.2350 250:$0.2550 1:$0.4500
SI2312BDS-T1-GE3	Vishay Intertechnologies	Single N-Channel 20 V 0.031 Ohm Surface Mount Power MosFet - SOT-23-3 RoHS: Compliant Min Qty: 3000	6000Reel	45000:$0.1350 15000:$0.1380 12000:$0.1390 6000:$0.1410 3000:$0.1690
SI2312BDS-T1-GE3 DISTI # 781-SI2312BDS-T1-GE3	Vishay Intertechnologies	MOSFET 20V 5.0A 1.25W 31mohm @ 4.5V RoHS: Compliant	7316	1:$0.5300 10:$0.4210 100:$0.3230 500:$0.2570 1000:$0.1980 3000:$0.1720
SI2312BDS-T1-GE3	Vishay Intertechnologies	MOSFET 20V 5.0A 1.25W 31mohm @ 4.5V RoHS: Compliant	Americas - 3000
SI2312BDS-T1-GE3 DISTI # XSFP00000063435	Vishay Siliconix	Single N-Channel 20 V 0.031 Ohm Surface Mount Power MosFet - SOT-23-3 RoHS: Compliant	99000 in Stock0 on Order	99000:$0.2160 3000:$0.2314
SI2312BDST1GE3	Vishay Intertechnologies	Small Signal Field-Effect Transistor, 3.9A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236 RoHS: Compliant	Europe - 45000

영상	부분 #	설명
	Mfr.#: SI2313DS OMO.#: OMO-SI2313DS-1190	신규 및 오리지널
	Mfr.#: SI2313DS-T1 OMO.#: OMO-SI2313DS-T1-1190	신규 및 오리지널
	Mfr.#: SI2313DS-T1-E3 OMO.#: OMO-SI2313DS-T1-E3-1190	신규 및 오리지널
	Mfr.#: SI2313DS-T1-GE3 OMO.#: OMO-SI2313DS-T1-GE3-1190	신규 및 오리지널

SI2313DS-T1-GE3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes