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FFSP15120A

FFSP15120A
Mfr. #:
FFSP15120A
제조사:
ON Semiconductor / Fairchild
설명:
Schottky Diodes & Rectifiers 1200V SiC SBD 15A
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
FFSP15120A 데이터 시트
배달:
DHL FedEx Ups TNT EMS
지불:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
추가 정보:
FFSP15120A 추가 정보
제품 속성
속성 값
제조사:
온세미컨덕터
제품 카테고리:
쇼트키 다이오드 및 정류기
RoHS:
Y
제품:
쇼트키 탄화규소 다이오드
장착 스타일:
구멍을 통해
패키지/케이스:
TO-220-2L
If - 순방향 전류:
15 A
Vrrm - 반복적인 역전압:
1.2 kV
Vf - 순방향 전압:
1.45 V
Ifsm - 순방향 서지 전류:
115 A
구성:
하나의
기술:
SiC
Ir - 역전류:
200 uA
최소 작동 온도:
- 55 C
최대 작동 온도:
+ 175 C
시리즈:
FFSP15120A
포장:
튜브
상표:
온세미컨덕터 / 페어차일드
Pd - 전력 손실:
300 W
상품 유형:
쇼트키 다이오드 및 정류기
공장 팩 수량:
800
하위 카테고리:
다이오드 및 정류기
Vr - 역 전압:
1.2 kV
단위 무게:
0.076192 oz
Tags
FFSP1, FFSP, FFS
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Rectifier Diode Schottky 1.2KV 15A 2-Pin(2+Tab) TO-220 Tube
***et
Silicon Carbide Schottky Diode 650 V 15 A 2-Pin TO-220 Through Hole Tube
***emi
SiC Diode, 1200V, 15A, TO-220-2
***rchild Semiconductor
SiC Schottky Diode has no switching loss, provides improved system efficiency against Si diodes by utilizing new semiconductor material - Silicon Carbide, enables higher operating frequency, and helps increasing power density and reduction of system size/cost. Its high reliability ensures robust operation during surge or over-voltage conditions
FFSP SiC Schottky Diodes
ON Semiconductor FFSP SiC (Silicon Carbide) Schottky Diodes are designed to leverage the advantages of Silicon Carbide over Silicon (Si) devices. FFSP SiC Schottky Diodes feature drastically higher forward surge capability, lower reverse leakage, and no reverse recovery current. These SiC Schottky Diodes also feature temperature independent switching characteristics and excellent thermal performance. This results in improved system efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost.
1200V SiC Schottky Diodes
ON Semiconductor 1200V Silicon Carbide (SiC) Schottky Diodes provide superior switching performance and higher reliability to silicon-based devices. These SiC Schottky diodes feature no reverse recovery current, temperature-independent switching, and excellent thermal performance. The system benefits include high-efficiency, fast operating frequency, high-power density, low EMI, and reduced system size and cost.
Wide Bandgap SiC Devices
ON Semiconductor Wide Bandgap Silicon Carbide (SiC) Devices incorporate a completely new technology that provides superior switching performance and higher reliability compared to silicon. The system benefits include the highest efficiency, faster-operating frequency, increased power density, reduced EMI, and reduced system size and cost. ON Semiconductor’s SiC portfolio includes 650V and 1200V diodes, 650V and 1200V IGBT and SiC diode Power Integrated Modules (PIMs), 1200V MOSFETs and SiC MOSFET drivers, and AEC-Q100 qualified devices.
Silicon Carbide Schottky Diodes
ON Semiconductor Silicon Carbide (SiC) Schottky Diodes provide superior switching performance and higher reliability to silicon-based devices. SiC Schottky Diodes feature no reverse recovery current, temperature independent switching, and excellent thermal performance. System benefits include high efficiency, fast operating frequency, high power density, low EMI, and reduced system size and cost.  ON Semiconductor offers 650V and 1200V devices in a range of current and package options, ideal for next-generation power system designs.
부분 # 제조 설명 재고 가격
FFSP15120A
DISTI # 26994629		ON SemiconductorSilicon Carbide Schottky Diode800
  • 1600:$4.7748
  • 800:$5.2864
FFSP15120A
DISTI # FFSP15120AOS-ND		ON SemiconductorDIODE SCHOTTKY 1.2KV 15A TO220-2
RoHS: Compliant
Min Qty: 1
Container: Tube		749In Stock
  • 800:$5.3398
  • 100:$6.1321
  • 25:$7.0624
  • 10:$7.4070
  • 1:$8.2000
FFSP15120A
DISTI # V36:1790_17093689		ON SemiconductorSilicon Carbide Schottky Diode0
    FFSP15120A
    DISTI # FFSP15120A    		ON SemiconductorSilicon Carbide Schottky Diode 650 V 15 A 2-Pin TO-220 Through Hole Tube - Rail/Tube (Alt: FFSP15120A)
    RoHS: Compliant
    Min Qty: 800
    Container: Tube    		Americas - 0
    • 8000:$4.5900
    • 3200:$4.6900
    • 4800:$4.6900
    • 800:$4.7900
    • 1600:$4.7900
    FFSP15120A
    DISTI # 512-FFSP15120A    		ON SemiconductorSchottky Diodes & Rectifiers 1200V SiC SBD 15A
    RoHS: Compliant    		470
    • 1:$8.4300
    • 10:$7.6200
    • 25:$7.2700
    • 100:$6.3100
    • 250:$6.0300
    • 500:$5.4900
    FFSP15120AON SemiconductorSilicon Carbide (SiC) Schottky Diodes500
    • 1:$12.8600
    • 100:$8.2100
    • 500:$6.7700
    • 1000:$6.2200
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    OMO.#: OMO-SMA6F10A-STMICROELECTRONICS

    		 600 W TVS IN SMA FLAT
    유효성
    재고:
    464
    주문 시:
    2447
    수량 입력:
    FFSP15120A의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
    참고 가격(USD)
    수량
    단가
    내선 가격
    1
    US$8.88
    US$8.88
    10
    US$8.03
    US$80.30
    25
    US$7.65
    US$191.25
    100
    US$6.64
    US$664.00
    250
    US$6.34
    US$1 585.00
    500
    US$5.78
    US$2 890.00
    1000
    US$5.04
    US$5 040.00
    2021년부터 반도체 공급 부족으로 인해 아래 가격은 2021년 이전 정상 가격입니다. 확인을 위해 문의를 보내주세요.
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