2SK2632LS

2SK2632LS
Mfr. #:
2SK2632LS
제조사:
Rochester Electronics, LLC
설명:
Power Field-Effect Transistor, 2.5A I(D), 800V, 4.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
2SK2632LS 데이터 시트
배달:
DHL FedEx Ups TNT EMS
지불:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
제품 속성
속성 값
제조사
산요
제품 카테고리
FET - 단일
Tags
2SK2632L, 2SK2632, 2SK263, 2SK26, 2SK2, 2SK
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
Silicon MOSFET N Channel Enhancement 800V 2.5A 3-Pin TO-220 Through Hole
***ical
Trans MOSFET N-CH 800V 2.5A 3-Pin(3+Tab) TO-220FI
***nell
MOSFET, N CH 800V 2.5A TO220F; Transistor Type:Switching; On State Resistance:4.8ohm; Power Dissipation:2W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-220FI; Case Style:TO-220FI; Cont Current Id:2.5A; Termination Type:Through Hole; Transistor Polarity:N; Typ Voltage Vds:800V; Typ Voltage Vgs th:5.5V; Voltage Vgs Rds on Measurement:15V
***emi
Power MOSFET, N-Channel, QFET®, 800 V, 3.0 A, 4.8 Ω, TO-220F
***Yang
Trans MOSFET N-CH 800V 3A 3-Pin(3+Tab) TO-220F Rail - Rail/Tube
***enic
800V 3A 39W 4.8´Î@10V1.5A 5V@250Ã×A N Channel TO-220F(TO-220IS) MOSFETs ROHS
***r Electronics
Power Field-Effect Transistor, 3A I(D), 800V, 4.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ment14 APAC
MOSFET, N, TO-220F; Transistor Polarity:N Channel; Continuous Drain Current Id:3A; Drain Source Voltage Vds:800V; On Resistance Rds(on):4.8ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V; Power Dissipation Pd:39W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-220F; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:3A; No. of Transistors:1; Package / Case:TO-220F; Power Dissipation Pd:39W; Power Dissipation Pd:39W; Pulse Current Idm:12A; Termination Type:Through Hole; Voltage Vds Typ:800V; Voltage Vgs Max:5V; Voltage Vgs Rds on Measurement:10V
***rchild Semiconductor
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
***icroelectronics
N-CHANNEL 800V - 3 OHM - 3A TO-220FP Zener-Protected SuperMESH(TM) Power MOSFET
***et
Trans MOSFET N-CH 800V 3A 3-Pin(3+Tab) TO-220FP Tube
***enic
800V 3A 3.5´Î@10V1.5A 25W 4.5V@50Ã×A N Channel TO-220F(TO-220IS) MOSFETs ROHS
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 3A I(D), 800V, 3.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***et
Trans MOSFET N-CH 800V 3A 3-Pin(3+Tab) TO-220F Rail
***emi
N-Channel QFET® MOSFET 800V, 3A, 4.8Ω
***rchild Semiconductor
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
***icroelectronics
N-CHANNEL 800V - 3.8 Ohm - 2.5A TO-220FP Zener-Protected SuperMESH™ Power MOSFET
*** Source Electronics
Trans MOSFET N-CH 800V 2.5A 3-Pin(3+Tab) TO-220FP Tube / MOSFET N-CH 800V 2.5A TO220FP
***enic
800V 2.5A 25W 4.5´Î@10V1.25A 4.5V@50Ã×A N Channel TO-220F(TO-220IS) MOSFETs ROHS
***ark
MOSFET, N, TO-220FP; Channel Type:N Channel; Drain Source Voltage Vds:800V; Continuous Drain Current Id:2.5A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3.75V; Power Dissipation:25W RoHS Compliant: Yes
***r Electronics
Power Field-Effect Transistor, 2.5A I(D), 800V, 4.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ure Electronics
N-Channel 900 V 4.8 Ohm Flange Mount SuperMESH Power Mosfet - TO-220FP
***ical
Trans MOSFET N-CH 900V 3A 3-Pin(3+Tab) TO-220FP Tube
***r Electronics
Power Field-Effect Transistor, 3A I(D), 900V, 4.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ment14 APAC
MOSFET, N, TO-220FP; Transistor Polarity:N Channel; Continuous Drain Current Id:3A; Drain Source Voltage Vds:900V; On Resistance Rds(on):4.8ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3.75V; Power Dissipation Pd:25W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-220FP; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:3A; On State resistance @ Vgs = 10V:4.8ohm; Package / Case:TO-220FP; Power Dissipation Pd:25W; Power Dissipation Pd:25W; Pulse Current Idm:12A; Termination Type:Through Hole; Voltage Vds Typ:900V; Voltage Vgs Max:30V; Voltage Vgs Rds on Measurement:10V
***emi
N-Channel Power MOSFET, SUPERFET® II, 800 V, 2.6 A, 2.25 Ω, TO-220F
***Yang
Trans MOSFET N-CH 800V 2.6A 3-Pin TO-220F Tube - Rail/Tube
***r Electronics
Power Field-Effect Transistor, 3.5A I(D), 800V, 2.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***rchild Semiconductor
SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET II MOSFET is very suitable for the switching power applications such as Audio, Laptop adapter, Lighting, ATX power and industrial power applications.
부분 # 제조 설명 재고 가격
2SK2632LS-MG5ON Semiconductor 
RoHS: Not Compliant
15
  • 1000:$1.5200
  • 500:$1.5900
  • 100:$1.6600
  • 25:$1.7300
  • 1:$1.8600
2SK2632LS-CB11ON Semiconductor 
RoHS: Not Compliant
300
    2SK2632LSSANYO Semiconductor Co LtdPower Field-Effect Transistor, 2.5A I(D), 800V, 4.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
    RoHS: Not Compliant
    77
    • 1000:$1.1800
    • 500:$1.2400
    • 100:$1.2900
    • 25:$1.3500
    • 1:$1.4500
    영상 부분 # 설명
    2SK2499-Z-AZ

    Mfr.#: 2SK2499-Z-AZ

    OMO.#: OMO-2SK2499-Z-AZ-1190

    Power Field-Effect Transisto
    2SK2010

    Mfr.#: 2SK2010

    OMO.#: OMO-2SK2010-1190

    - Bulk (Alt: 2SK2010)
    2SK210-Y(TE85LF)

    Mfr.#: 2SK210-Y(TE85LF)

    OMO.#: OMO-2SK210-Y-TE85LF--1190

    신규 및 오리지널
    2SK2133-Z

    Mfr.#: 2SK2133-Z

    OMO.#: OMO-2SK2133-Z-1190

    신규 및 오리지널
    2SK2529-E

    Mfr.#: 2SK2529-E

    OMO.#: OMO-2SK2529-E-1190

    - Bulk (Alt: 2SK2529-E)
    2SK2740 TK8A60

    Mfr.#: 2SK2740 TK8A60

    OMO.#: OMO-2SK2740-TK8A60-1190

    신규 및 오리지널
    2SK2761,K2761

    Mfr.#: 2SK2761,K2761

    OMO.#: OMO-2SK2761-K2761-1190

    신규 및 오리지널
    2SK2761,K2761,2SK2761-01

    Mfr.#: 2SK2761,K2761,2SK2761-01

    OMO.#: OMO-2SK2761-K2761-2SK2761-01-1190

    신규 및 오리지널
    2SK2940L

    Mfr.#: 2SK2940L

    OMO.#: OMO-2SK2940L-1190

    신규 및 오리지널
    2SK2975

    Mfr.#: 2SK2975

    OMO.#: OMO-2SK2975-1190

    신규 및 오리지널
    유효성
    재고:
    Available
    주문 시:
    2500
    수량 입력:
    2SK2632LS의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
    참고 가격(USD)
    수량
    단가
    내선 가격
    1
    US$1.48
    US$1.48
    10
    US$1.41
    US$14.06
    100
    US$1.33
    US$133.23
    500
    US$1.26
    US$629.15
    1000
    US$1.18
    US$1 184.30
    시작
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