IRG4BC30FD1PBF

Mfr. #:: IRG4BC30FD1PBF
제조사:: Infineon Technologies
설명:: IGBT Transistors 600V Fast 1-5kHz >20kHz resonant mode
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: IRG4BC30FD1PBF 데이터 시트
배달:: DHL FedEx Ups TNT EMS
지불:: T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:: IRG4BC30FD1PBF Datasheet IRG4BC30FD1PBF Datasheet (P4-P6)IRG4BC30FD1PBF Datasheet (P7-P9)IRG4BC30FD1PBF Datasheet (P10)
ECAD Model:

제품 속성
속성 값

제조사:: 인피니언

제품 카테고리:: IGBT 트랜지스터

RoHS:: Y

기술:: 시

패키지/케이스:: TO-220-3

장착 스타일:: 구멍을 통해

구성:: 하나의

컬렉터-이미터 전압 VCEO 최대:: 600 V

수집기-이미터 포화 전압:: 1.8 V

최대 게이트 이미터 전압:: 20 V

25C에서 연속 수집기 전류:: 31 A

Pd - 전력 손실:: 100 W

최소 작동 온도:: - 55 C

포장:: 튜브

키:: 8.77 mm

길이:: 10.54 mm

너비:: 4.69 mm

상표:: 인피니언 테크놀로지스

상품 유형:: IGBT 트랜지스터

공장 팩 수량:: 1000

하위 카테고리:: IGBT

부품 번호 별칭:: SP001545790

단위 무게:: 0.211644 oz

Tags: IRG4BC30FD, IRG4BC30F, IRG4BC3, IRG4BC, IRG4B, IRG4, IRG

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IRG4BC30FD1PBF 설명

***ernational Rectifier: 600V Fast 1-5 kHz Hard Switching Copack IGBT in a TO-220AB package >20kHz resonant mode

***ical: Trans IGBT Chip N-CH 600V 31A 3-Pin(3+Tab) TO-220AB Tube

***ment14 APAC: IGBT, 600V, 31A, TO-220; Transistor Type:IGBT; DC Collector Current:31A; Collector Emitter Voltage Vces:1.8V; Power Dissipation Pd:100W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Ic Continuous a Max:31A; Fall Time Max:210ns; Package / Case:TO-220AB; Power Dissipation Max:100W; Power Dissipation Pd:100W; Power Dissipation Pd:100W; Pulsed Current Icm:120A; Rise Time:24ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:600V

Market price

부분 #	제조	설명	재고	가격
IRG4BC30FD1PBF DISTI # 31587113	Infineon Technologies AG	Trans IGBT Chip N-CH 600V 31A 100000mW 3-Pin(3+Tab) TO-220AB Tube RoHS: Compliant	750	5000:$1.7328 2500:$1.7721 1000:$1.8612 750:$2.2077
IRG4BC30FD1PBF DISTI # IRG4BC30FD1PBF-ND	Infineon Technologies AG	IGBT 600V 31A 100W TO220AB RoHS: Compliant Min Qty: 1000 Container: Tube	Limited Supply - Call
IRG4BC30FD1PBF DISTI # IRG4BC30FD1PBF	Infineon Technologies AG	Trans IGBT Chip N-CH 600V 31A 3-Pin(3+Tab) TO-220AB - Bulk (Alt: IRG4BC30FD1PBF) Min Qty: 187 Container: Bulk	Americas - 0	935:$1.6900 1870:$1.6900 374:$1.7900 561:$1.7900 187:$1.8900
IRG4BC30FD1PBF DISTI # 70018427	Infineon Technologies AG	600V FAST 1-5 kHz HARD SWITCHING COPACK IGBT IN A TO-220AB RoHS: Compliant	0	250:$5.5200
IRG4BC30FD1PBF DISTI # 942-IRG4BC30FD1PBF	Infineon Technologies AG	IGBT Transistors 600V Fast 1-5kHz >20kHz resonant mode RoHS: Compliant	312	1:$4.1300 10:$3.5100 100:$3.0400 250:$2.8900 500:$2.5900 1000:$2.1900 2000:$2.0800
IRG4BC30FD1PBF	Infineon Technologies AG	Insulated Gate Bipolar Transistor, 31A I(C), 600V V(BR)CES, N-Channel, TO-220AB RoHS: Compliant	210	1000:$1.7600 500:$1.8600 100:$1.9300 25:$2.0200 1:$2.1700
IRG4BC30FD1PBF	International Rectifier	Insulated Gate Bipolar Transistor, 31A I(C), 600V V(BR)CES, N-Channel, TO-220AB RoHS: Compliant	4300	1000:$1.7600 500:$1.8600 100:$1.9300 25:$2.0200 1:$2.1700
IRG4BC30FD1PBF DISTI # 8640899P	Infineon Technologies AG	IGBT 600V 31A HYPERFAST DIODE TO-220AB, TU	178	1000:£1.6050 500:£1.8300 250:£2.0500 50:£2.4700
IRG4BC30FD1PBF DISTI # 8659443	Infineon Technologies AG	IGBT, 600V, 31A, TO-220 RoHS: Compliant	0	5000:$3.0800 2000:$3.2000 1000:$3.3700 500:$3.9800 250:$4.4500 100:$4.6800 10:$5.4000 1:$6.3500

관련 상품

영상	부분 #	설명
	Mfr.#: MCP3208-CI/SL OMO.#: OMO-MCP3208-CI-SL	Analog to Digital Converters - ADC 12-bit SPI 8 Chl
	Mfr.#: 23LC1024-I/SN OMO.#: OMO-23LC1024-I-SN	SRAM 1024K 2.5V SPI SERIAL SRAM SQI
	Mfr.#: IRFB4020PBF OMO.#: OMO-IRFB4020PBF	MOSFET MOSFT 200V 100mOhm 18A 18nC Qg for Aud
	Mfr.#: SPA08N80C3XKSA1 OMO.#: OMO-SPA08N80C3XKSA1	MOSFET N-Ch 800V 8A TO220FP-3 CoolMOS C3
	Mfr.#: IRL3713PBF OMO.#: OMO-IRL3713PBF	MOSFET MOSFT 30V 200A 3mOhm 75nC Log LvlAB
	Mfr.#: STPS61150CW OMO.#: OMO-STPS61150CW	Schottky Diodes & Rectifiers 2x30 Amp 150 Volt
	Mfr.#: PIC16F18326-I/SL OMO.#: OMO-PIC16F18326-I-SL	8-bit Microcontrollers - MCU 256B EEPROM 10b ADC 5b DAC SPI/I2C
	Mfr.#: GSIB2580-E3/45 OMO.#: OMO-GSIB2580-E3-45	Bridge Rectifiers 800 Volt 25 Amp 350 Amp IFSM
	Mfr.#: MCP42100-E/P OMO.#: OMO-MCP42100-E-P	Digital Potentiometer ICs 256 Step SPI 100kOhm
	Mfr.#: RST 4 OMO.#: OMO-RST-4-728	Fuses with Leads (Through Hole)